Organic semiconductor laser and method for producing it
View Patent ↗An organic semiconductor laser, which is produced integrally with an electrically operable inorganic LED ( 1 ), and also the method for producing said laser.
1. An organic semiconductor laser comprising a layer composed of organically laser-active material and a laser resonator, wherein
an optical pump source is integrally connected to the organic semiconductor laser, the optical pump source being an electrically operated inorganic LED;
a surface of the inorganic LED has the form of a photonic crystal; and
a surface profile of the surface of the inorganic LED is transferred to the layer composed of organically laser-active material to form the laser resonator.
2. The organic semiconductor laser as claimed in claim 1 , in which the laser resonator is formed by patterning a surface of the organically laser-active material.
3. The organic semiconductor laser as claimed in claim 1 , in which the organically laser-active material is separated from the inorganic LED by a separation layer.
4. The organic semiconductor laser as claimed in claim 3 , in which the laser resonator is formed at an interface layer between the separation layer and the organically laser-active material.
5. The organic semiconductor laser as claimed in claim 1 , in which a surface of the inorganic LED which faces the layer composed of organically laser-active material is formed in roughened fashion.
6. The organic semiconductor laser as claimed in claim 3 , in which the separation layer forms a planarization layer.
7. The organic semiconductor laser as claimed in claim 6 , in which the planarization layer is applied by coating processes such as spin-coating or blade coating.
8. The organic semiconductor laser as claimed in claim 1 , in which the laser resonator is formed as a DFB resonator.
9. The organic semiconductor laser as claimed in claim 1 , in which the emission wavelength of the pump source is coordinated with the absorption band of the organically laser-active material.
10. The organic semiconductor laser as claimed in claim 1 , in which the laser resonator has a deep grating structure having a gradient in the modulation period.
11. The organic semiconductor laser as claimed in claim 1 , in which the laser resonator is embodied with a periodic structure in a plurality of spatial directions.
12. The organic semiconductor laser as claimed in claim 1 , in which the laser resonator is formed with a small modulation depth.
13. The organic semiconductor laser as claimed in claim 1 , in which a patterning of the laser resonator is effected at least one of mechanically, optically, and chemically.
14. The organic semiconductor laser as claimed in claim 1 , in which the laser resonator is embodied with a periodic structure in a plurality of spatial directions of a square or hexagonal grating.
15. An organic semiconductor laser comprising a layer composed of organically laser-active material and a laser resonator, wherein
an optical pump source is integrally connected to the organic semiconductor laser, the optical pump source being an electrically operated inorganic LED;
the organically laser-active material is separated from the inorganic LED by a separation layer;
inorganic crystals of the inorganic LED have a refractive index of n>2;
the organically laser-active material has an refractive index of n<2;
the separation layer has a lower refractive index than the organically laser-active material;
a surface of the inorganic LED has the form of a photonic crystal; and
a surface profile of the surface of the inorganic LED is transferred to the layer composed of organically laser-active material to form the laser resonator.
16. The organic semiconductor laser as claimed in claim 15 , in which the laser resonator is formed at an interface layer between the separation layer and the organically laser-active material.