Solid state image pickup device having optical black pixels with temperature characteristics above and below temperature characteristics of aperture pixels

1. A solid-state imaging device comprising:

a plurality of aperture pixels for capturing an image;

a plurality of first light-shielded pixels shielded from light for detection of a first dark current, the first light-shielded pixels having a first dark current generating rate at a given temperature that is larger than a dark current generating rate at the given temperature for the aperture pixels; and

a plurality of second light-shielded pixels shielded from light for detection of a second dark current, the second light-shielded pixels having a second dark current generating rate at the given temperature that is smaller than a dark current generating rate at the given temperature for the aperture pixels, the second light-shielded pixels having a different physical structure from the plurality of first light-shielded pixels, wherein

pixel values of the plurality of aperture pixels, the plurality of first light-shielded pixels, and the plurality of second light-shielded pixels are read out independently of each other, and a dark current for the aperture pixels is determined based on the first and second dark currents.

2. The solid-state imaging device according to claim 1 , wherein

the plurality of first light-shielded pixels are provided around the plurality of aperture pixels, and the plurality of second light-shielded pixels are provided around the plurality of first light-shielded pixels.

3. The solid-state imaging device according to claim 1 , wherein

the plurality of second light-shielded pixels are provided around the plurality of aperture pixels, and the plurality of first light-shielded pixels are provided around the plurality of second light-shielded pixels.

4. The solid-state imaging device according to claim 1 , wherein

the first light-shielded pixels each include a photoelectric conversion element and an element for reading out a pixel value from the photoelectric conversion element and transferring the pixel value, and

the second light-shielded pixels each include an element for reading out and transferring a pixel value, and the element is an element other than a photoelectric conversion element.

5. The solid-state imaging device according to claim 1 , wherein

the first light-shielded pixels and the second light-shielded pixels each include a photoelectric conversion element, and an area of the photoelectric conversion elements in the first light-shielded pixels is larger than an area of the photoelectric conversion elements in the second light-shielded pixels.

6. The solid-state imaging device according to claim 1 , wherein

the first light-shielded pixels and the second light-shielded pixels each include a photoelectric conversion element, and an impurity concentration in the photoelectric conversion elements in the first light-shielded pixels is higher than an impurity concentration in the photoelectric conversion elements in the second light-shielded pixels.

7. The solid-state imaging device according to claim 1 , wherein

the first light-shielded pixels and the second light-shielded pixels each include a floating diffusion, and an area of the floating diffusions in the first light-shielded pixels is larger than an area of the floating diffusions in the second light-shielded pixels.

8. The solid-state imaging device according to claim 1 , wherein

the first light-shielded pixels and the second light-shielded pixels each include a floating diffusion, and an impurity concentration in the floating diffusions in the first light-shielded pixels is higher than an impurity concentration in the floating diffusions in the second light-shielded pixels.

9. An imaging apparatus comprising:

a solid-state imaging device;

a controller configured to control the solid-state imaging device; and

wherein

the solid-state imaging device includes:

a plurality of aperture pixels that are used for capturing of an image;

a plurality of first light-shielded pixels that are shielded from light for detection of a first dark current, the first light-shielded pixels having a first dark current generating rate at a given temperature that is larger than a dark current generating rate at the given temperature for the aperture pixels; and

a plurality of second light-shielded pixels that are shielded from light for detection of a second dark current and having a second dark current generating rate at the given temperature that is smaller than a dark current generating rate at the given temperature for the aperture pixels, the second light-shielded pixels having a different physical structure from the plurality of first light-shielded pixels and

pixel values of the plurality of aperture pixels, the plurality of first light-shielded pixels, and the plurality of second light-shielded pixels are read out independently of each other, and a dark current for the aperture pixels is determined based on the first and second dark currents.