IP Library Granted Patent US 7,681,457
Granted Patent B2
US 7,681,457 · App. 12/015,175 · Granted Mar 23, 2010

Micromechanical pressure sensing device

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Quick Facts
Patent No.
US 7,681,457
App. No.
12/015,175
Granted
Mar 23, 2010
Kind
B2
Abstract

A micromechanical pressure sensing device includes a silicon support structure, which is configured to provide a plurality of silicon support beams. The device further includes one or more diaphragms attached to and supported by the support beams, and at least one piezoresistive sensing device, which is buried in at least one of the support beams. The piezoresistive sensing device is arranged to sense a strain induced in the silicon support structure, the strain being induced by a fluid in contact with the one or more diaphragms, to determine the pressure acting on the one or more diaphragms.

Claims (14)

1. A micromechanical pressure sensing device, comprising:

a silicon support structure including a plurality of silicon support beams;

at least one diaphragm attached to and supported by the support beams; and

at least one piezoresistive sensing device, buried in at least one of the support beams,

the piezoresistive sensing device being arranged to sense a strain induced in the silicon support structure, the strain being induced by a fluid in contact with the at least one diaphragm, to determine a pressure acting on the at least one diaphragm.

2. The device according to claim 1 , wherein the piezoresistive sensing device comprises a piezoresistive Wheatstone bridge.

3. The device according to claim 1 , the at least one diaphragm comprising a plurality of diaphragms arranged in an array, each diaphragm being separated from each of its adjacent diaphragms by one of the plurality of support beams.

4. The device according to claim 1 , wherein the diaphragm is semi-permeable.

5. The device according to claim 1 , wherein the diaphragm is arranged to act as filter.

6. The device according to claim 1 , wherein the silicon support structure comprises at least one of: single-crystal silicon, poly-silicon, and silicon nitride.

7. The device according to claim 1 , further comprising:

a first cavity for receiving a first fluid that contacts one surface of the one or more diaphragms; and

a second cavity for receiving a reference fluid that contacts the other surface of the one or more diaphragms, the piezoresistive sensing device being arranged to sense the strain induced in the silicon support structure by the first fluid.

8. The device according to claim 1 , wherein the piezoresistive sensing device is further arranged to determine the osmotic pressure of the fluid.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 14, 2011
From: INFINEON TECHNOLOGIES SENSONOR AS
To: INFINEON TECHNOLOGIES AG
Reel/Frame 025637/0932 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 21, 2008
From: JAKOBSEN, HENRIK
To: INFINEON TECHNOLOGIES SENSONOR AS
Reel/Frame 020683/0891 →