Organic thin film transistor array and manufacturing method thereof
View Patent ↗An organic thin film transistor array panel is provided, which includes: a substrate; a data line formed on the substrate and including a source electrode; a drain electrode formed on the substrate and separated from the data line; an organic semiconductor disposed on the source electrode and the drain electrode; a gate insulator formed on the organic semiconductor; a gate line including a gate electrode disposed on the gate insulator; a passivation layer formed on the gate line and having a first contact hole on the drain electrode; a pixel electrode connected to the drain electrode through the first contact hole; and an opaque light blocking member disposed under the organic semiconductor.
1. A method for manufacturing an organic thin film transistor array panel, the method comprising:
forming a light blocking member, which is a black matrix, directly on a substrate;
forming a first insulating layer on the light blocking member after forming the light blocking member;
forming a data line and a drain electrode on the first insulating layer after forming the first insulating layer on the light blocking member, the data line including a source electrode;
forming a partition having an opening partly exposing the source electrode and the drain electrode and a contact hole exposing the drain electrode;
forming a semiconductor in the opening, the semiconductor being in alignment with the light blocking member;
forming a gate insulator on the semiconductor;
forming a gate line including a gate electrode on the gate insulator;
forming a passivation layer on the gate line; and
forming a pixel electrode on the passivation layer.
2. The method of claim 1 , wherein the formation of the semiconductor comprises inkjet printing.
3. The method of claim 1 , wherein the formation of the gate insulator comprises inkjet printing.
4. The method of claim 1 , wherein the partition comprises organic insulating material.
5. The method of claim 1 , further comprising:
forming a second insulating layer on the first insulating layer, the first insulating layer being an organic insulating material and the second insulating layer being an inorganic insulating material.
6. The method of claim 1 , further comprising:
forming a color filter under the data line and the drain electrode.
7. The method of claim 1 , further comprising:
forming a color filter under the passivation layer.
8. The method of claim 1 , wherein the semiconductor is an organic semiconductor.
9. The method of claim 1 , wherein the gate electrode fully covers the gate insulator.
10. The method of claim 9 , wherein a portion of the gate electrode is disposed on the partition and overlaps a portion of the partition.
11. A method for manufacturing an organic thin film transistor array panel, the method comprising:
forming a light blocking member on a substrate;
forming a first insulating layer on the light blocking member;
forming a data line and a drain electrode on the first insulating layer, the data line including a source electrode;
forming a partition having an opening partly exposing the source electrode and the drain electrode;
forming a semiconductor in the opening;
forming a gate insulator on the semiconductor to be confined in the opening;
forming a gate line including a gate electrode on the gate insulator;
forming a passivation layer on the gate line; and
forming a pixel electrode on the passivation layer.
12. The method of claim 11 , wherein the semiconductor is an organic semiconductor.
13. The method of claim 11 , wherein the gate electrode fully covers the gate insulator.
14. The method of claim 13 , wherein a portion of the gate electrode is disposed on the partition and overlaps a portion of the partition.