Diamond-like carbon (DLC) hardmask and methods of fabrication using same
View Patent ↗A method according to one embodiment comprises forming a thin film layer; forming a hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon; removing a portion of the hardmask layer; and removing a portion of the thin film layer that is unprotected by the hardmask layer. A method according to another embodiment comprises forming a thin film layer; forming a patterned hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon; and implanting a material into a portion of the thin film layer that is unprotected by the patterned hardmask layer. Additional methods are disclosed.
1. A method, comprising:
forming a thin film layer;
forming a hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon;
removing a portion of the hardmask layer; and
removing a portion of the thin film layer that is unprotected by the hardmask layer,
wherein the thin film layer comprises a magnetic material, wherein the hardmask is formed directly on the thin film layer.
2. A method as recited in claim 1 , wherein a thickness of the hardmask in a direction perpendicular to a plane of formation thereof is greater than about 300 angstroms.
3. A method as recited in claim 1 , wherein a thickness of the hardmask in a direction perpendicular to a plane of formation thereof is greater than about 1000 angstroms.
4. A method as recited in claim 1 , wherein a thickness of the hardmask in a direction perpendicular to a plane of formation thereof is between about 300 and about 2000 angstroms.
5. A method as recited in claim 1 , further comprising, after removing the unprotected portion of the thin film layer, removing the hard mask layer.
6. A method as recited in claim 1 , wherein the portion of the thin film layer is removed by etching.
7. A method as recited in claim 1 , wherein the portion of the thin film layer is removed by milling.
8. A method as recited in claim 1 , wherein the hardmask includes adhesion layers between the layers of diamond-like carbon.
9. A method as recited in claim 1 , further comprising, after removing the unprotected portion of the thin film layer, forming a layer of insulating material over and along sides of the thin film layer by atomic layer deposition.
10. A method as recited in claim 9 , further comprising, after forming the layer of insulating material, removing a portion of the insulating material for exposing the hardmask layer, and removing the hardmask layer.
11. A method as recited in claim 1 , wherein removing the portion of the thin film layer is performed at angles such that sidewalls of a remaining portion of the thin film layer taper together at an end thereof away from the hardmask layer.
12. A method as recited in claim 11 , wherein an angle of taper relative to a plane of deposition of the thin film layer is greater than about 70 degrees.
13. A method, comprising:
forming a thin film layer;
forming a hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon;
removing a portion of the hardmask layer; and
removing a portion of the thin film layer that is unprotected by the hardmask layer,
wherein removing the portion of the hardmask layer comprises forming a patterned protective layer above the hardmask layer, and performing a fluorine-based reactive ion etching on exposed portions of the hardmask layer.
14. A method, comprising:
forming a thin film layer;
forming a hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon;
removing a portion of the hardmask layer; and
removing a portion of the thin film layer that is unprotected by the hardmask layer,
wherein removing the portion of the hardmask layer comprises forming a patterned protective layer above the hardmask layer, and performing an oxygen-based ion milling on exposed portions of the hardmask layer.
15. A method, comprising:
forming a thin film layer;
forming a hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon;
removing a portion of the hardmask layer; and
removing a portion of the thin film layer that is unprotected by the hardmask layer,
wherein removing the portion of the thin film layer is performed at angles such that sidewalls of a remaining portion of the thin film layer taper together at an end thereof away from the hardmask layer.
16. A method as recited in claim 15 , wherein an angle of taper relative to a plane of deposition of the thin film layer is greater than about 70 degrees.
17. A method, comprising:
forming a thin film layer;
forming a patterned hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon; and
implanting a material into a portion of the thin film layer that is unprotected by the patterned hardmask layer,
wherein the thin film layer comprises a magnetic material, wherein the hardmask is formed directly on the thin film layer.
18. A method, comprising:
forming a thin film pole layer;
forming a patterned hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon; and
removing a portion of the thin film pole layer that is unprotected by the hardmask layer for defining a pole such that sidewalls of a remaining portion of the thin film layer taper together at an end thereof away from the hardmask layer.
19. A method as recited in claim 18 , wherein a thickness of the hardmask in a direction perpendicular to a plane of formation thereof is greater than about 300 angstroms.
20. A method as recited in claim 18 , wherein an angle of taper relative to a plane of deposition of the thin film layer is greater than about 70 degrees.
21. A method as recited in claim 18 , wherein the hardmask includes adhesion layers between the layers of diamond-like carbon.
22. A method as recited in claim 18 , further comprising, after removing the unprotected portion of the thin film layer, forming a layer of insulating material over and along sides of the thin film layer by atomic layer deposition.
23. A method as recited in claim 22 , further comprising using ion milling to remove a top portion of the insulating material, while minimizing removal of the insulating material along the sides of the thin film layer.
24. A method, comprising:
forming a thin film pole layer;
forming a patterned hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon;
removing a portion of the thin film pole layer that is unprotected by the hardmask layer for defining a pole such that sidewalls of a remaining portion of the thin film layer taper together at an end thereof away from the hardmask layer, wherein an angle of taper relative to a plane of deposition of the thin film layer is greater than about 70 degrees; and
removing the hard mask layer.