Organic Light Emitting Diode Display on a Flexible Substrate
A flexible metal foil substrate organic light emitting diode (OLED) display and a method for forming the same are provided. The method comprises: supplying a metal foil substrate such as titanium (Ti), Inconel alloy, or Kovar, having a thickness in the range of 10 to 500 microns; planarizing the metal foil substrate surface; depositing an electrical isolation layer having a thickness in the range of 0.5 to 2 microns overlying the planarized metal foil substrate surface; depositing amorphous silicon having a thickness in the range of 25 to 150 nanometers (nm) overlying the electrical insulation layer; from the amorphous silicon, forming polycrystalline silicon overlying the electrical insulation layer; forming thin-film transistors (TFTs) in the polycrystalline silicon; and, forming an electronic circuit using the TFTs, such as an OLED display.
1 - 12 . (canceled)
13 . A method for forming an organic light emitting diode (OLED) display on a flexible substrate, the method comprising:
supplying a metal foil substrate with a surface selected from the group including titanium (Ti), Inconel alloy, and Kovar;
forming polycrystalline silicon overlying the electrical insulation layer;
forming thin-film transistors (TFTs) in the polycrystalline silicon; and,
forming OLEDs overlying the TFTs.
14 . The method of claim 13 further comprising:
planarizing the metal foil substrate surface;
depositing an electrical isolation layer overlying the planarized metal foil substrate surface;
depositing amorphous silicon overlying the electrical insulation layer; and,
wherein forming polycrystalline silicon overlying the electrical insulation layer includes forming polycrystalline silicon from the amorphous silicon.
15 . The method of claim 13 wherein supplying a metal foil substrate with a surface includes supplying a metal foil having a thickness in the range of 10 to 500 microns.
16 . The method of claim 15 wherein supplying a metal foil substrate with a surface includes supplying a metal foil having a thickness in the range of 50 to 250 microns.
17 . The method of claim 16 wherein supplying a metal foil substrate with a surface includes supplying a metal foil having a thickness in the range of 100 to 200 microns.
18 . The method of claim 14 wherein depositing an electrical isolation layer overlying the planarized metal foil substrate surface includes depositing a layer having a thickness in the range of 0.5 to 2 microns.
19 . The method of claim 18 wherein depositing an electrical isolation layer overlying the planarized metal foil substrate surface includes depositing a layer having a thickness in the range of 0.5 to 1.5 microns.
20 . The method of claim 19 wherein depositing an electrical isolation layer overlying the planarized metal foil substrate surface includes depositing a layer having a thickness in the range of 0.5 to 1 microns.
21 . The method of claim 14 wherein depositing amorphous silicon includes depositing amorphous silicon having a thickness in the range of 25 to 150 nanometers (nm).
22 . The method of claim 21 wherein depositing amorphous silicon includes depositing amorphous silicon having a thickness in the range of 25 to 100 nm.
23 . The method of claim 22 wherein depositing amorphous silicon includes depositing amorphous silicon having a thickness in the range of 35 to 60 nm.
24 . The method of claim 13 wherein forming OLEDs overlying the TFTs includes:
forming a metal anode overlying the TFTs;
forming a polymer organic layer overlying the anode; and,
forming a semi-transparent cathode overlying the organic layer.
25 . The method of claim 13 further comprising:
forming a resin layer overlying the OLEDs; and,
forming a seal plate overlying the resin layer.
26 . The method of claim 13 wherein forming OLEDs overlying the TFTs includes:
forming a metal cathode overlying the TFTs;
forming a polymer organic layer overlying the cathode; and,
forming a semi-transparent anode overlying the organic layer.
27 - 43 . (canceled)