Method of manufacturing display device
View Patent ↗A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.
1. A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate;
wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including an aggregate of crystals, each having a long axis substantially along direction of current flow, wherein a source electrode and a drain electrode is connected by the crystals, and the crystals do not have crystal grain boundaries which cross the direction of current flow.
2. A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate;
wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including an aggregate of crystals whose long axis is substantially along direction of current flow, wherein a source electrode and a drain electrode be connected by the crystals, and the crystals do not have crystal grain boundaries which cross the direction of current flow.
3. The TFT device according to claim 1 , wherein
the pixel portions are formed by a crystal other than an aggregation of crystals whose long axis is substantially along direction of current flow.
4. The TFT device according to claim 1 ,
wherein a size of a crystal forming the driving circuit portion, is larger than a size of a crystal forming the pixel portion.