Nitride semiconductor light-emitting device providing efficient light extraction
View Patent ↗A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.
1. A nitride semiconductor light-emitting device comprising:
a substrate; and
a first n-type nitride semiconductor layer;
an emission layer;
a p-type nitride semiconductor layer;
a conductive metal layer; and
a second n-type nitride semiconductor layer,
said layers being stacked on said substrate successively in recited order from a side closer to said substrate,
wherein an electrode is provided on a surface of said second n-type nitride semiconductor layer or above the surface of said second n-type nitride semiconductor layer.
2. The nitride semiconductor light-emitting device according to claim 1 , wherein said metal layer is made of a hydrogen-storage alloy.
3. The nitride semiconductor light-emitting device according to claim 1 , wherein a semiconductor layer containing an n-type dopant and a p-type dopant is provided between said p-type nitride semiconductor layer and said metal layer.
4. The nitride semiconductor light-emitting device according to claim 3 , wherein said semiconductor layer is formed by a plurality of layers.
5. The nitride semiconductor light-emitting device according to claim 1 , wherein a semiconductor layer containing an n-type dopant and a p-type dopant is provided between said metal layer and said second n-type nitride semiconductor layer.
6. The nitride semiconductor light-emitting device according to claim 5 , wherein said semiconductor layer is formed by a plurality of layers.
7. The nitride semiconductor light-emitting device according to claim 1 , wherein a nitride semiconductor layer having a smaller band gap than said p-type nitride semiconductor layer and said second n-type nitride semiconductor layer is provided between said p-type nitride semiconductor layer and said metal layer.
8. The nitride semiconductor light-emitting device according to claim 1 , wherein a nitride semiconductor layer having a smaller band gap than said p-type nitride semiconductor layer and said second n-type nitride semiconductor layer is provided between said metal layer and said second n-type nitride semiconductor layer.
9. The nitride semiconductor light-emitting device according to claim 1 , wherein the band gap energy of said second n-type nitride semiconductor layer is larger than energy corresponding to the wavelength of light emitted from said emission layer.