Crack stops for semiconductor devices

1. A barrier structure for a semiconductor device, comprising:

a plurality of substantially V-shaped regions, the plurality of substantially V-shaped regions being oriented parallel to a horizontal plane, each of the plurality of substantially V-shaped regions being disposed adjacent another of the plurality of substantially V-shaped regions, wherein the barrier structure comprises a first continuous line of the plurality of substantially V-shaped regions and a second continuous line of the plurality of substantially V-shaped regions proximate the first continuous line of the plurality of substantially V-shaped regions, wherein the first continuous lines have a first height along a vertical direction, wherein the second continuous lines have a second height along the vertical direction, and wherein the first and the second continuous lines are laterally separated in a top view of the semiconductor device.

2. The barrier structure according to claim 1 , wherein the semiconductor device comprises a central region and a perimeter region, wherein the barrier structure is formed in the perimeter region of the semiconductor device.

3. The barrier structure according to claim 2 , wherein each of the plurality of the substantially V-shaped regions comprises a pointed area and an open area, wherein the pointed areas of the plurality of substantially V-shaped regions of the barrier structure face the central region of the semiconductor device, and wherein the open areas of the plurality of substantially V-shaped regions of the barrier structure face the perimeter region of the semiconductor device.

4. The barrier structure according to claim 1 , wherein at least one of the plurality of substantially V-shaped regions is coupled to an adjacent substantially V-shaped region at an end of the at least one substantially V-shaped region.

5. The barrier structure according to claim 1 , wherein at least one of the plurality of substantially V-shaped regions intersects with another of the plurality of substantially V-shaped regions.

6. The barrier structure according to claim 5 , wherein a portion of at least two of the plurality of substantially V-shaped regions that intersect substantially comprises a shape of an X or a W.

7. The barrier structure according to claim 1 , wherein the barrier structure comprises a crack prevention structure or a moisture barrier structure for the semiconductor device.

8. The barrier structure according to claim 1 , wherein at least one of the plurality of substantially V-shaped regions intersects with another of the plurality of substantially V-shaped regions thereby forming a smaller V-shaped region in an intersected region.

9. A semiconductor device, comprising:

an integrated circuit; and

a barrier structure disposed on the integrated circuit, the barrier structure comprising a plurality of substantially V-shaped regions, the plurality of substantially V-shaped regions being oriented parallel to a horizontal plane, each of the plurality of substantially V-shaped regions being disposed adjacent another of the plurality of substantially V-shaped regions, wherein the barrier structure comprises a first continuous line of the plurality of substantially V-shaped regions and a second continuous line of the plurality of substantially V-shaped regions proximate the first continuous line of the plurality of substantially V-shaped regions, wherein the first continuous lines have a first height along a vertical direction, wherein the second continuous lines have a second height along the vertical direction, and wherein the first and the second continuous lines are laterally separated in a top view of the semiconductor device.

10. The semiconductor device according to claim 9 , wherein the plurality of substantially V-shaped regions comprises a V shape comprising two substantially straight lines that intersect at a pointed area.

11. The semiconductor device according to claim 9 , wherein the plurality of substantially V-shaped regions comprises a substantially V shape comprising two stair-step-shaped elements that intersect at a substantially pointed area.

12. The semiconductor device according to claim 11 , further comprising at least one protruding element within an open area of at least one of the plurality of substantially V-shaped regions, wherein the at least one protruding element is coupled to and extends from one of the stair-step-shaped elements.

13. The semiconductor device according to claim 11 , further comprising a connecting member disposed between at least one of the plurality of substantially V-shaped regions and an adjacent substantially V-shaped region.

14. The semiconductor device according to claim 9 , wherein the integrated circuit comprises at least one metallization layer, wherein the plurality of substantially V-shaped regions of the barrier structure is formed in the at least one metallization layer of the integrated circuit.

15. The semiconductor device according to claim 14 , wherein the at least one metallization layer comprises at least one conductive line layer and at least one via layer, wherein the barrier structure includes a plurality of first substantially V-shaped regions disposed in the at least one via layer, and wherein the barrier structure includes a second substantially V-shaped region disposed in the at least one conductive line layer, the second substantially V-shaped region being larger than the plurality of first substantially V-shaped regions, or wherein the barrier structure includes a plate-like structure disposed in the at least one conductive line layer.

16. The semiconductor device according to claim 14 , wherein the integrated circuit is formed on a workpiece, the workpiece having a top portion, and wherein a portion of the barrier structure is also formed in the top portion of the workpiece.

17. A plurality of semiconductor devices according to claim 9 disposed on a wafer, wherein the plurality of semiconductor devices comprises the integrated circuit separated from other integrated circuits by a scribe line region, wherein the barrier structures of the integrated circuits are disposed proximate the scribe line region of the wafer.

18. The semiconductor device according to claim 9 , wherein at least one of the plurality of substantially V-shaped regions intersects with another of the plurality of substantially V-shaped regions thereby forming a smaller V-shaped region in an intersected region.

19. A semiconductor device comprising:

a first W-shaped region disposed within a barrier structure around an integrated circuit, the first W-shaped region comprising

a first substantially V-shaped region having a first side and a second side, and

a second substantially V-shaped region having a first side and a second side, the second substantially V-shaped region disposed adjacent the first substantially V-shaped region, wherein the second side of the first substantially V-shaped region intersects with the first side of the second substantially V-shaped region at a first intersection point, and wherein the first intersection point is at about a center of the second side of the first substantially V-shaped region.

20. The semiconductor device of claim 19 , wherein the intersection point is at about a center of the first side of the second substantially V-shaped region.

21. The semiconductor device of claim 19 , further comprising a third substantially V-shaped region having a first side and a second side, the third substantially V-shaped region disposed adjacent the first substantially V-shaped region, an end of the second side of the third substantially V-shaped region intersecting an end of the first side of the first substantially V-shaped region.

22. The semiconductor device of claim 19 , further comprising:

a second W-shaped region disposed within the barrier structure, the second W-shaped region comprising

a third substantially V-shaped region having a first side and a second side, and

a fourth substantially V-shaped region having a first side and a second side, the fourth substantially V-shaped region disposed adjacent the third substantially V-shaped region, wherein the second side of the third substantially V-shaped region intersects with the first side of the fourth substantially V-shaped region at a second intersection point, and wherein the second intersection point is at about a center of the second side of the third substantially V-shaped region, wherein an end of the second side of the second substantially V-shaped region intersects with an end of the first side of the third substantially V-shaped region.

23. The semiconductor device of claim 19 , further comprising a fifth substantially V-shaped region having a first side and a second side, the fifth substantially V-shaped region disposed adjacent the first substantially V-shaped region, an end of the second side of the fifth substantially V-shaped region intersecting an end of the first side of the first substantially V-shaped region.

24. The semiconductor device of claim 19 , wherein the first W-shaped region is part of a first continuous line, the first continuous line being formed continuously around the integrated circuit.

25. The semiconductor device of claim 24 , further comprising a second continuous line adjacent the first continuous line, the second continuous line being formed continuously around the integrated circuit.

26. The semiconductor device of claim 25 , wherein the second continuous line comprises a second W-shaped line.

27. The semiconductor device of claim 26 , the second W-shaped line comprises:

a third substantially V-shaped region having a first side and a second side; and

a fourth substantially V-shaped region having a first side and a second side, the fourth substantially V-shaped region disposed adjacent the third substantially V-shaped region, wherein the second side of the third substantially V-shaped region intersects with the first side of the fourth substantially V-shaped region at a second intersection point, and wherein the second intersection point is at about a center of the second side of the third substantially V-shaped region, wherein an end of the second side of the second substantially V-shaped region intersects with an end of the first side of the third substantially V-shaped region.