METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DEVICE AND ORGANIC LIGHT-EMITTING DEVICE MANUFACTURED USING THE METHOD
Provided is a method of manufacturing an organic light-emitting device, the method including: forming an anode; forming an intermediate layer including an emission layer on the anode; and forming a cathode on the intermediate layer, wherein the forming the cathode includes: thermally depositing indium oxide with plasma generated in a chamber; and surface-treating with plasma an indium oxide layer formed by the thermal depositing of the indium oxide.
1 . A method of manufacturing an organic light-emitting device, the method comprising:
forming an anode;
forming an intermediate layer comprising an emission layer on the anode; and
forming a cathode on the intermediate layer, wherein the forming the cathode comprises:
thermally depositing indium oxide in plasma generated in a chamber; and
surface-treating with plasma an indium oxide layer formed by the thermal depositing of the indium oxide.
2 . The method of claim 1 , wherein the surface treating the indium oxide layer with the plasma comprises lowering an oxygen ratio in the indium oxide layer.
3 . An organic light-emitting device formed by utilizing a method comprising:
forming an anode;
forming an intermediate layer comprising an emission layer on the anode; and
forming a cathode on the intermediate layer, wherein the forming the cathode comprises:
thermally depositing indium oxide in plasma generated in a chamber; and
surface-treating with plasma an indium oxide layer formed by the thermal depositing of the indium oxide.
4 . A method of manufacturing an organic light-emitting device, the method comprising:
forming an anode;
forming an intermediate layer comprising an emission layer on the anode; and
forming a cathode on the intermediate layer, wherein the forming the cathode comprises:
thermally depositing indium oxide, and at least one of a metal or a metal oxide to form a transparent conductive layer of indium oxide doped with the at least one of the metal or the metal oxide; and
surface-treating with plasma the transparent conductive layer of the indium oxide doped with the at least one of the metal or the metal oxide formed by the thermal depositing of the indium oxide, and the at least one of the metal or the metal oxide.
5 . The method of claim 4 , wherein the forming the cathode comprises thermally depositing the indium oxide and the at least one of the metal or the metal oxide in plasma generated in a chamber to form the transparent conductive layer of the indium oxide doped with the at least one of the metal or the metal oxide.
6 . The method of claim 4 , wherein the surface treating the transparent conductive layer with the plasma comprises lowering an oxygen ratio in the transparent conductive layer.
7 . The method of claim 4 , wherein an absolute work function value of the at least one of the metal or the metal oxide is lower than that of the indium oxide.
8 . The method of claim 4 , wherein the metal comprises a material selected from the group consisting of ytterbium (Yb), calcium (Ca), magnesium (Mg), samarium (Sm), cesium (Cs), barium (Ba), strontium (Sr), yttrium (Y), lanthanum (La), and combinations thereof.
9 . The method of claim 4 , wherein the metal oxide comprises a material selected from the group consisting of strontium oxide, calcium oxide, cesium oxide, barium oxide, yttrium oxide, lanthanum oxide, and combinations thereof.
10 . The method of claim 4 , wherein the at least one of the metal or the metal oxide utilized to form the transparent conductive layer comprises both the metal and the metal oxide.
11 . The method of claim 10 , wherein the forming the cathode comprises thermally depositing the indium oxide, the metal, and the metal oxide in plasma generated in a chamber to form the transparent conductive layer of the indium oxide doped with the metal and the metal oxide.
12 . The method of claim 10 , wherein the surface treating the transparent conductive layer with the plasma comprises lowering an oxygen ratio in the transparent conductive layer.
13 . The method of claim 10 , wherein absolute work function values of the metal and the metal oxide are each lower than that of the indium oxide.
14 . The method of claim 10 , wherein the metal comprises a material selected from the group consisting of ytterbium (Yb), calcium (Ca), magnesium (Mg), samarium (Sm), cesium (Cs), barium (Ba), strontium (Sr), yttrium (Y), lanthanum (La), and combinations thereof.
15 . The method of claim 10 , wherein the metal oxide comprises a material selected from the group consisting of strontium oxide, calcium oxide, cesium oxide, barium oxide, yttrium oxide, lanthanum oxide, and combinations thereof.
16 . An organic light-emitting device formed utilizing a method comprising:
forming an anode;
forming an intermediate layer comprising an emission layer on the anode; and
forming a cathode on the intermediate layer, wherein the forming the cathode comprises:
thermally depositing indium oxide, and at least one of a metal or a metal oxide to form a transparent conductive layer of indium oxide doped with the at least one of the metal or the metal oxide; and
surface-treating with plasma the transparent conductive layer of the indium oxide doped with the at least one of the metal or the metal oxide formed by the thermal depositing of the indium oxide, and the at least one of the metal or the metal oxide.
17 . The organic light-emitting device of claim 16 , wherein the at least one of the metal or the metal oxide utilized to form the transparent conductive layer comprises both the metal and the metal oxide.