Semiconductor laser diode
View Patent ↗In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.
1. A semiconductor laser device, comprising:
a first region and a second region, wherein the first region includes an active layer provided on a semiconductor substrate, said active layer being configured for generating a laser beam;
an upper cladding layer provided above the active layer; and
a mesa structure, comprised of a semiconductor material provided above the active layer,
wherein the second region comprises a window region at an edge of the semiconductor laser device from which the laser beam is emitted;
wherein a semiconductor layer of the window region has a band gap larger than that of the energy of the laser beam;
wherein the semiconductor layer of the window region comprises a stacked structure of an n-type semiconductor layer, a first semi-insulating semiconductor layer, and a p-type semiconductor layer; and
wherein a first semi-insulating semiconductor into which a material selected from the group of Ru, Os, Rh, and Ti is doped is used for part of or whole of the semi-insulating semiconductor layer.
2. The semiconductor laser according to claim 1 , wherein the semiconductor material for composing the semiconductor laser is selected from combinations of materials of the group of In, Ga, Al, B, TI, Bi, As, P, Sb, and N.
3. The semiconductor laser according to claim 2 , wherein a reflecting mirror is provided at one end of the window region to direct an outgoing direction of the laser beam upward or downward of the substrate.
4. The semiconductor laser according to claim 2 , wherein a length of the active layer is within a range of from 10 μm to 100 μm.
5. The semiconductor laser according to claim 3 , wherein a lens structure is provided inside the semiconductor substrate to focus a laser beam reflected off the reflecting mirror.
6. The semiconductor laser according to claim 5 , wherein a length of the active layer is within a range of from 10 μm to 100 μm.
7. The semiconductor laser according to claim 2 ,
wherein a reflecting mirror is provided at one end of the window region to direct an outgoing direction of the laser beam upward or downward of the substrate; and
wherein a length of the active layer is within a range of from 10 μm to 100 μm.
8. The semiconductor laser according to claim 1 ,
wherein the semi-insulating semiconductor layer is a stacked structure of a layer into which a material selected from the group of Ru, Os, Rh, and Ti is doped and a layer into which Fe is doped; and
wherein the layer into which Fe is doped is stacked continuously with a p-type semiconductor layer into which Zn is doped.
9. The semiconductor laser according to claim 8 , wherein the semiconductor material for composing the semiconductor laser is selected from combinations of materials of the group of In, Ga, Al, B, TI, Bi, As, P, Sb, and N.
10. The semiconductor laser according to claim 9 , wherein a reflecting mirror is provided at one end of the window region to direct an outgoing direction of the laser beam upward or downward of the substrate.
11. The semiconductor laser according to claim 9 , wherein a length of the active layer is within a range of from 10 μm to 100 μm.
12. The semiconductor laser according to claim 10 , wherein a lens structure is provided inside the semiconductor substrate to focus a laser beam reflected off the reflecting mirror.
13. The semiconductor laser according to claim 12 , wherein a length of the active layer is within a range of from 10 μm to 100 μm.
14. The semiconductor laser according to claim 9 ,
wherein a reflecting mirror is provided at one end of the window region to direct an outgoing direction of the laser beam upward or downward of the substrate; and
wherein a length of the active layer is within a range of from 10 μm to 100 μm.
15. The semiconductor laser according to claim 1 ,
wherein a diffraction grating is provided in the first region or the second region.
16. The semiconductor laser according to claim 15 ,
wherein a semiconductor material for forming the semiconductor laser is selected from combinations of materials of the group of In, Ga, Al, B, TI, Bi, As, P, Sb, and N.
17. The semiconductor laser according to claim 1 ,
wherein a diffraction grating is provided in the first region;
wherein a third region comprising an electro-absorption modulation is provided between the first region and the second region; and
wherein the semiconductor layer in the window region has a band gap larger than that of the energy of the laser beam.
18. The semiconductor laser according to claim 1 ,
wherein a diffraction grating is provided in the first region,
wherein the semiconductor layer of the window region further comprises, in the stacked structure, a first semi-insulating semiconductor layer, a second semi-insulating semiconductor layer located between the first semi-insulated semiconductor layer and the p-type semiconductor layer; and
where Fe is doped into the second insulating layer;
wherein Zn is doped into the p-type semiconductor layer.