PHOTOLUMINESCENT NANOCRYSTAL BASED TAGGANTS
A taggant for marking a target through the use of a carrier or a projectile loaded on a firing device and methods for fabricating the same are disclosed. The taggant including photoluminescent semiconductor nanocrystal(s) materials incorporated in a carrier or projectile. The photoluminescent semiconductor nanocrystal(s) materials may be encapsulated in a medium for facilitating marking of the target.
1 . A taggant for marking a surface comprising:
a medium, wherein the medium is a fluid selected from a group consisting of: a gas, a liquid and a combination thereof; and
a first population of semiconductor nanocrystal(s) materials selected from a group consisting of: nanocrystal cores, nanocrystal complexes and a combination thereof, wherein the semiconductor nanocrystal(s) materials emit a photoluminescent light on exposure to a light source.
2 . The taggant of claim 1 , wherein the fluid includes a viscosity and a surface tension, wherein each of the viscosity and the surface tension is dependent on a proportion of components selected from a group consisting of: solvents, surfactants, additives and combinations thereof.
3 . The taggant of claim 2 , wherein the fluid is selected from a group consisting of: water-based formulations, non-water-based formulations and a combination thereof.
4 . The taggant of claim 3 , wherein, in the case where the fluid is a water-based formulation, the fluid further includes an aqueous liquid vehicle comprising water and a water soluble vehicle, wherein the water content range from between approximately 40% to approximately 90% by weight.
5 . The taggant of claim 4 , wherein the water soluble vehicle includes a solvent selected from a group consisting of: glycerol, triethylene, glycol mono butyl ether, diethylene glycol, dipropylene glycol, methyl ethyl ketone, 2-pyrollidinone, polyvinylpyrollidinone, polyalcohols and a combination thereof.
6 . The taggant of claim 2 , wherein the fluid includes a viscosity ranging from approximately 200 cps to approximately 1000 cps, and a surface tension ranging from approximately 15 dynes/cm to approximately 27 dynes/cm.
7 . The taggant of claim 2 , wherein the surfactant includes a moiety selected from a group consisting of: non-ionic, anionic, cationic, amphoteric, zwitterionic and a combination thereof.
8 . The taggant of claim 2 , wherein the fluid further includes an amine selected from a group consisting of: triethanol amine, ethanol amine, diethanol amine, trisopropanolamine, butyldiethanolamine, N,N-dimethylethanolamine, N,N-diethylethanolamine, and N,N-dipropylethanolamine.
9 . The taggant of claim 3 , wherein, in the case where the fluid is a non-water-based formulation, the fluid further includes one selected from a group consisting of: a polymer and an organic solvent having water content at less than 1% by weight, wherein the organic solvent is selected from a group consisting of: water-immiscible solvents, water-miscible solvents and a combination thereof.
10 . The taggant of claim 9 , wherein the polymer includes one selected from a group consisting of: petroleum jelly, products of petrolatum and a combination thereof.
11 . The taggant of claim 9 , wherein the non-water-based formulation of the medium includes approximately 2 to approximately 5 organic solvents.
12 . The taggant of claim 9 , wherein the water-immiscible solvent includes one selected from a group consisting of: aliphatic hydrocarbons, esters, chlorinated hydrocarbons, ethers and a combination thereof.
13 . The taggant of claim 11 , wherein water-immiscible solvent includes a polar solvent selected from a group consisting of: toluene, chloroform, dichloromethane, octadecane, C 1 -C 4 alcohols and a combination thereof.
14 . The taggant of claim 9 , wherein the wherein the non-water-based formulation of the medium further includes an additive selected from a group consisting of: unsaturated hydrocarbons, ethers, ether esters, esters, polymeric binders and a combination thereof.
15 . The taggant of claim 1 , wherein the first population of semiconductor nanocrystal(s) materials exhibit a peak emission wavelength ranging from approximately 400 nm to approximately 2500 nm.
16 . The taggant of claim 1 , further including a second population of semiconductor nanocrystal(s) materials, wherein the photoluminescent light emitted by the combination of the first population and the second population of semiconductor nanocrystal(s) materials generates a unique spectral code.
17 . The taggant of claim 1 , wherein the photoluminescent light includes a peak emission at a distinct wavelength.
18 . The taggant of claim 1 , wherein the nanocrystal cores and nanocrystal complexes include a composition of different semiconductor materials, and wherein the nanocrystal complexes include shells of semiconductor materials.
19 . The taggant of claim 17 , wherein the nanocrystal cores include a shape selected from a group consisting of: spheres, obliques, oblates and rod-shapes, wherein the nanocrystal cores include a diameter ranging from between approximately 1 nm and approximately 20 nm.
20 . The taggant of claim 18 , wherein the nanocrystal cores include a semiconductor material selected from a group consisting of Group II-VI, Group III-V, Group IV-VI, Group I-III-VI, Group II with alloyed Group I-III-VI and a combination thereof.
21 . The taggant of claim 19 , wherein the Group II-VI semiconductor material is selected from a group consisting of: zinc sulphide (ZnS), zinc selenium (ZnSe), zinc tellurium (ZnTe), cadmium sulphide (CdS), cadmium selenium (CdSe), cadmium tellurium (CdTe), mercury sulphide (HgS), mercury selenium (HgSe) and mercury tellurium (HgTe),
22 . The taggant of claim 19 , wherein the Group III-V semiconductor material is selected from a group consisting of: aluminum nitride (AlN), aluminum phosphate (AlP), aluminum arsenic (AlAs), aluminum antimony (AlSb), gallium nitride (GaN), gallium phosphate (GaP), gallium arsenic (GaAs), gallium antimony (GaSb), indium nitride (InN), indium phosphate (InP), indium gallium phosphate (InGaP), indium arsenic (InAs) and indium antimony (InSb).
23 . The taggant of claim 19 , wherein the Group IV-VI semiconductor material is selected from a group consisting of: lead sulphide (PbS), lead selenium (PbSe) and lead tellurium (PbTe).
24 . The taggant of claim 19 , wherein the Group II with Group I-III-VI alloys of semiconductor material is selected from a group consisting of: copper indium gallium sulphide (CuInGaS 2 ), copper indium gallium selenium (CuInGaSe 2 ), zinc copper indium gallium sulphide (ZnCuInGaS 2 ), zinc copper indium gallium selenium (ZnCuInGaSe 2 ), sliver indium gallium sulphide (AgInGaS 2 ) and sliver indium gallium selenium (AgInGaSe 2 ).
25 . The taggant of claim 17 , wherein the shells of the nanocrystal complexes are selected from a group consisting of: zinc sulphide (ZnS), zinc selenium (ZnSe), zinc tellurium (ZnTe), cadmium sulphide (CdS), cadmium selenium (CdSe), cadmium tellurium (CdTe), mercury sulphide (HgS), mercury selenium (HgSe), mercury tellurium (HgTe), indium nitride (InN), indium phosphate (InP), indium arsenic (InAs), indium antimony (InSb), gallium nitride (GaN), gallium phosphate (GaP), gallium arsenic (GaAs), gallium antimony (GaSb), lead sulphide (PbS), lead selenium (PbSe) and lead tellurium (PbTe).
26 . The taggant of claim 17 , wherein the semiconductor nanocrystal complexes absorb energy at a first wavelength that falls within at least a portion of ultraviolet or visible spectrum and emit light at a second wavelength.
27 . The taggant of claim 1 , wherein the light source produces light having a substantial portion at a wavelength shorter than the peak emission wavelength emitted by the semiconductor nanocrystal(s) materials,
28 . The taggant of claim 1 , wherein the energy source includes xenon lamps, deuterium lamps, mercury vapor lamps, excimer lasers, light emitting diodes (LEDs), Ultra Violet LEDs, Violet LEDs, Blue LEDs, solid state lasers and diode lasers, gas lasers, doubled frequency titanium (Ti): Sapphire lasers, tripled frequency titanium (Ti): Sapphire lasers, doubled frequency neodymium (Nd): yttrium aluminum garnet (YAG) lasers wherein the wavelength has a wavelength that falling within a range of approximately 250 nm to approximately 1550 nm.
29 . A method of preparing a medium for a taggant for marking a surface, the method comprising:
introducing a component, the component having a first percentage by weight,
introducing a subsequent component to form a mixture with the component, the subsequent component having a second percentage by weight, wherein the first percentage by weight is greater than the second percentage by weight.
30 . The method of claim 29 , further includes repeating the introducing a subsequent component until each subsequent component is incorporated in the mixture.
31 . A method of tagging a target surface, the method comprising:
providing a projectile;
incorporating a taggant as part of the projectile; and
loading the projectile onto a firing device,
wherein the incorporating includes one selected from a group consisting of: filling a chamber of the projectile with the taggant and coating the projectile with the taggant,
wherein the taggant includes:
a medium, wherein the medium is a fluid selected from a group consisting of: a gas, a liquid and a combination thereof; and
a population of semiconductor nanocrystal(s) materials selected from a group consisting of: nanocrystal cores, nanocrystal complexes and a combination thereof, wherein the semiconductor nanocrystal(s) materials emit a photoluminescent light on exposure to a light source.
32 . A taggant for marking a surface comprising:
a first population of semiconductor nanocrystal(s) materials selected from a group consisting of: nanocrystal cores, nanocrystal complexes and a combination thereof, wherein the semiconductor nanocrystal(s) materials emit a photoluminescent light on exposure to a light source.
33 . The taggant of claim 32 , wherein the first population of semiconductor nanocrystal(s) materials exhibit a peak emission wavelength ranging from approximately 400 nm to approximately 2500 nm.
34 . The taggant of claim 32 , further including a second population of semiconductor nanocrystal(s) materials, wherein the photoluminescent light emitted by the combination of the first population and the second population of semiconductor nanocrystal(s) materials generates a unique spectral code.
35 . The taggant of claim 32 , wherein the photoluminescent light includes a peak emission at a distinct wavelength.
36 . The taggant of claim 32 , wherein the nanocrystal cores and nanocrystal complexes include a composition of different semiconductor materials, and wherein the nanocrystal complexes include shells of semiconductor materials.
37 . The taggant of claim 35 , wherein the nanocrystal cores include a shape selected from a group consisting of: spheres, obliques, oblates and rod-shapes, wherein the nanocrystal cores include a diameter ranging from between approximately 1 nm and approximately 20 nm.
38 . The taggant of claim 36 , wherein the nanocrystal cores include a semiconductor material selected from a group consisting of Group II-VI, Group III-V, Group IV-VI, Group I-III-VI, Group II with alloyed Group I-III-VI and a combination thereof.
39 . The taggant of claim 37 , wherein the Group II-VI semiconductor material is selected from a group consisting of: zinc sulphide (ZnS), zinc selenium (ZnSe), zinc tellurium (ZnTe), cadmium sulphide (CdS), cadmium selenium (CdSe), cadmium tellurium (CdTe), mercury sulphide (HgS), mercury selenium (HgSe) and mercury tellurium (HgTe),
40 . The taggant of claim 37 , wherein the Group III-V semiconductor material is selected from a group consisting of: aluminum nitride (AlN), aluminum phosphate (AlP), aluminum arsenic (AlAs), aluminum antimony (AlSb), gallium nitride (GaN), gallium phosphate (GaP), gallium arsenic (GaAs), gallium antimony (GaSb), indium nitride (InN), indium phosphate (InP), indium gallium phosphate (InGaP), indium arsenic (InAs) and indium antimony (InSb).
41 . The taggant of claim 37 , wherein the Group IV-VI semiconductor material is selected from a group consisting of: lead sulphide (PbS), lead selenium (PbSe) and lead tellurium (PbTe).
42 . The taggant of claim 37 , wherein the Group II with Group I-III-VI alloys of semiconductor material is selected from a group consisting of: copper indium gallium sulphide (CuInGaS 2 ), copper indium gallium selenium (CuInGaSe 2 ), zinc copper indium gallium sulphide (ZnCuInGaS 2 ), zinc copper indium gallium selenium (ZnCuInGaSe 2 ), sliver indium gallium sulphide (AgInGaS 2 ) and sliver indium gallium selenium (AgInGaSe 2 ).
43 . The taggant of claim 35 , wherein the shells of the nanocrystal complexes are selected from a group consisting of: zinc sulphide (ZnS), zinc selenium (ZnSe), zinc tellurium (ZnTe), cadmium sulphide (CdS), cadmium selenium (CdSe), cadmium tellurium (CdTe), mercury sulphide (HgS), mercury selenium (HgSe), mercury tellurium (HgTe), indium nitride (InN), indium phosphate (InP), indium arsenic (InAs), indium antimony (InSb), gallium nitride (GaN), gallium phosphate (GaP), gallium arsenic (GaAs), gallium antimony (GaSb), lead sulphide (PbS), lead selenium (PbSe) and lead tellurium (PbTe).
44 . The taggant of claim 35 , wherein the semiconductor nanocrystal complexes absorb energy at a first wavelength that falls within at least a portion of ultraviolet or visible spectrum and emit light at a second wavelength.
45 . The taggant of claim 32 , wherein the light source produces light having a substantial portion at a wavelength shorter than the peak emission wavelength emitted by the semiconductor nanocrystal(s) materials,
46 . The taggant of claim 32 , wherein the energy source includes xenon lamps, deuterium lamps, mercury vapor lamps, excimer lasers, light emitting diodes (LEDs), Ultra Violet LEDs, Violet LEDs, Blue LEDs, solid state lasers and diode lasers, gas lasers, doubled frequency titanium (Ti): Sapphire lasers, tripled frequency titanium (Ti): Sapphire lasers, doubled frequency neodymium (Nd): yttrium aluminum garnet (YAG) lasers wherein the wavelength has a wavelength that falling within a range of approximately 250 nm to approximately 1550 nm.