IP Library Granted Patent US 7,838,809
Granted Patent B2
US 7,838,809 · App. 12/033,212 · Granted Nov 23, 2010

Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials

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Quick Facts
Patent No.
US 7,838,809
App. No.
12/033,212
Granted
Nov 23, 2010
Kind
B2
Abstract

Small-signal and other circuit design techniques realized by carbon nanotube field-effect transistors (CNFETs) to create analog electronics for analog signal handling, analog signal processing, and conversions between analog signals and digital signals. As the CNFETs exist and operate at nanoscale, they can be readily collocated or integrated into carbon nanotube sensing and transducing systems. The resulting collocation and integration may be at, or adequately near, nanoscale. One embodiment implements an analog differential amplifier having transistors which include carbon nanotubes, electrical contacts, and insulating material. The differential amplifier may be used in isolation or as an element of an operational amplifier. Negative feedback may be used to implement a wide range of analog signal processing functions, and to provide conversions among analog and digital signals. In some cases, an entire analog differential amplifier is implemented with a single carbon nanotube.

Claims (36)

1. A multiple transistor differential amplifier implemented on a single carbon nanotube sensor, the differential amplifier comprising:

a first plurality of electrical conductors, each conductor configured to form an electrical contact at a separate portion of a single carbon nanotube;

a second plurality of electrical conductors, each conductor separated from the carbon nanotube by an electrically insulating material so that each of the second plurality of electrical conductors exerts an electric field on the carbon nanotube sufficient to form a gate of a field effect transistor;

a current source formed in a first section of the carbon nanotube of at least one of the electrical contacts and at least one of the gates;

a differential amplifier formed in a second section of the carbon nanotube of at least one of the electrical contacts and at least one of the gates, and connected with the current source;

at least a first portion of the differential amplifier comprising a first carbon nanotube transistor electrically responsive to an incoming electrical signal presented to the first carbon nanotube transistor; and

at least a second portion of the differential amplifier comprising a first carbon nanotube transistor electrically responsive to the incoming electrical signal;

wherein the differential amplifier and current source together operate as a differential amplifier configured to generate an outgoing signal responsive to the incoming electrical signal.

2. The differential amplifier of claim 1 , wherein the first section of the carbon nanotube and the second section of the carbon nanotube are adjacent and share a common electrical contact comprising one of the first plurality of electrical conductors.

3. The differential amplifier of claim 1 , wherein the differential amplifier additionally comprises a carbon nanotube field effect transistor used as an active load.

4. The differential amplifier of claim 1 , wherein the current source comprises an additional carbon nanotube field effect transistor.

5. A method for forming a multiple transistor differential amplifier on a single carbon nanotube sensor, the method comprising:

forming a first plurality of electrical conductors on a single carbon nanotube, each conductor configured to form an electrical contact at a separate portion the carbon nanotube;

forming a second plurality of electrical conductors, each conductor being separated from the carbon nanotube by an electrically insulating material so that each of the second plurality of electrical conductors exerts an electric field on the carbon nanotube sufficient to form a gate of a field effect transistor;

forming a current source in a first section of the carbon nanotube wherein the current source comprises least one of the electrical contacts and at least one of the gates; and

forming a differential amplifier formed in a second section of the carbon nanotube wherein the differential amplifier comprises at least one of the electrical contacts and at least one of the gates, and the differential amplifier is connected with the current source,

wherein at least a first portion of the differential amplifier comprising a first carbon nanotube transistor is electrically responsive to a incoming electrical signal presented to the first carbon nanotube transistor,

wherein at least a second portion of the differential amplifier comprising a first carbon nanotube transistor electrically is responsive to the incoming electrical signal, and

wherein the differential amplifier and current source together operate as a differential amplifier configured to generate an outgoing signal responsive to the incoming electrical signal.

6. The method of claim 5 , wherein the first section of the carbon nanotube and the second section of the carbon nanotube are adjacent and share a common electrical contact comprising one of the first plurality of electrical conductors.

7. The method of claim 5 , wherein the differential amplifier additionally comprises a carbon nanotube field effect transistor used as an active load.

8. The method of claim 5 , wherein the current source comprises an additional carbon nanotube field effect transistor.

9. An optically interconnected carbon nanotube electronic system, the system comprising:

a first plurality of electrical conductors, each conductor configured to form an electrical contact at a separate portion of a single carbon nanotube;

a second plurality of electrical conductors, each conductor separated from the carbon nanotube by an electrically insulating material so that each of the second plurality of electrical conductors exerts an electric field on the carbon nanotube sufficient to form a gate of a first field effect transistor in a first portion of the carbon nanotube;

a first carbon nanotube sensor in a second portion of the carbon nanotube, the carbon nanotube sensor electrically responsive to an incoming optical stimulus presented to the first carbon nanotube sensor;

a third plurality of electrical conductors, each conductor configured to form an electrical contact at a separate portion the carbon nanotube;

a fourth plurality of electrical conductors, each conductor separated from the carbon nanotube by an electrically insulating material so that each of the second plurality of electrical conductors exerts an electric field on the carbon nanotube sufficient to form a gate of a second field effect transistor in a second portion of the carbon nanotube;

a carbon nanotube light emission element in the second portion of the carbon nanotube, the carbon nanotube light emission element responsive to electrical signals from the second field effect transistor;

wherein the carbon nanotube implements a first field effect transistor electrical circuit and a second field effect transistor electrical circuit; and

wherein the first field effect transistor electrical circuit provides a first optical signal to the second field effect transistor electrical circuit.

10. The system of claim 9 , wherein the system comprises at least a third field effect transistor electrical circuit and wherein the optical signal is additionally directed to the third field effect transistor electrical circuit.

11. The system of claim 9 , wherein the system comprises at least a third field effect transistor electrical circuit and wherein a second optical signal is generated by the third field effect transistor electrical circuit.

12. The system of claim 11 , wherein the larger carbon nanotube electronic system further comprises at least a fourth field effect transistor electrical circuit and wherein the first and second optical signals implement wavelength division multiplexing.

13. The system of claim 9 , wherein the system is part of a larger carbon nanotube electronic system comprising at least a third field effect transistor electrical circuit utilizing an electrical signal associated with at least one of the first and second field effect transistor electrical circuits.

14. The system of claim 9 , wherein the optical signal is transmitted by an optical structure.

Assignments (2)
MERGER Recorded Jan 20, 2016
From: PIKE GROUP LLC
To: GULA CONSULTING LIMITED LIABILITY COMPANY
Reel/Frame 037539/0025 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 7, 2011
From: LUDWIG, LESTER F.
To: PIKE GROUP LLC
Reel/Frame 026869/0544 →