Organic transistor, method for manufacturing the same, and electronic apparatus including the same

1. An organic transistor comprising:

a source electrode and a drain electrode;

an organic semiconductor layer disposed between the source electrode and the drain electrode;

a gate insulating layer; and

a gate electrode opposing the source and drain electrodes with the organic semiconductor layer and the gate insulating layer therebetween,

wherein the organic semiconductor layer includes a first semiconductor portion in a region where the gate electrode and the source electrode oppose each other, a second semiconductor portion in a region where the gate electrode and the drain electrode oppose each other, and a third semiconductor portion between the first semiconductor portion and the second semiconductor portion; and the first semiconductor portion, the second semiconductor portion, the third semiconductor portion, the source electrode, and the drain electrode satisfy the relationships of W 1 <W 3 , W 2 <W 3 , W 4 <W 3 , and W 5 <W 3 , wherein W 1 represents the average thickness of the first semiconductor portion, W 2 represents the average thickness of the second semiconductor portion, W 3 represents the average thickness of the third semiconductor portion, W 4 represents a height of an upper surface of the first semiconductor portion from a lower surface of the source electrode, and W 5 represents a height of an upper surface of the second semiconductor portion from a lower surface of the drain electrode.

2. The organic transistor according to claim 1 , wherein W 1 , W 2 , and W 3 satisfy the relationships W 1 ≦50 nm, W 2 ≦50 nm, and 50 nm<W 3 ≦200 nm.

3. The organic transistor according to claim 1 , wherein only part of the source electrode opposes the gate electrode.

4. The organic transistor according to claim 1 , wherein only part of the drain electrode opposes the gate electrode.

5. An electronic apparatus comprising the organic transistor as set forth in claim 1 .

6. An organic transistor comprising:

a source electrode and a drain electrode;

an organic semiconductor layer disposed between the source electrode and the drain electrode;

a gate insulating layer; and

a gate electrode opposing the source and drain electrodes with the organic semiconductor layer and the gate insulating layer therebetween,

wherein the organic semiconductor layer includes a first semiconductor portion in a region where the gate electrode and the source electrode oppose each other, a second semiconductor portion in a region where the gate electrode and the drain electrode oppose each other, and a third semiconductor portion between the first semiconductor portion and the second semiconductor portion;

wherein an average thickness of the first semiconductor portion is W 1 ,

an average thickness of the second semiconductor portion is W 2 ,

an average thickness of the third semiconductor portion is W 3 ,

a combined thickness of the first semiconductor portion and the source electrode is W 4 ,

a combined thickness of the second semiconductor portion and the drain electrode is W 5 , and

each of W 1 , W 2 , W 4 , and W 5 are less than W 3 .

7. The organic transistor according to claim 6 , wherein W 1 , W 2 , and W 3 satisfy the relationships W 1 ≦50 nm, W 2 ≦50 nm, and 50 nm<W 3 ≦200 nm.

8. The organic transistor according to claim 6 , wherein only part of the source electrode opposes the gate electrode.

9. The organic transistor according to claim 6 , wherein only part of the drain electrode opposes the gate electrode.

10. An electronic apparatus comprising the organic transistor as set forth in claim 6 .