Nanotube device
View Patent ↗A device comprising a nanotube configured as a resonator, a source electrode, a gate electrode, a drain electrode and at least one impeding element, wherein the at least one impeding element is configured to minimize energy loss due to a contact resistance between at least the source electrode and the nanotube.
1. A device comprising a nanotube configured as a resonator, a source electrode, a gate electrode, and a drain electrode, wherein a first end portion of the nanotube is fixed to the source electrode via an interposed layer of solid insulating material.
2. A device according to claim 1 , wherein the nanotube, the source electrode, the gate electrode and the drain electrode are arranged such that a second end portion of the nanotube extends from the source electrode generally above the gate electrode and the drain electrode.
3. A device according to claim 2 , wherein the nanotube is in first capacitive contact with the source electrode, in second capacitive contact with the gate electrode and in third capacitive contact with the drain electrode, wherein the capacitance of the first capacitive contact is greater than the capacitance of the second and third capacitive contacts.
4. A device according to claim 1 , wherein the first end portion of the nanotube is fixed to the source electrode via a first layer of solid insulating material and a second end portion of the nanotube is fixed to the drain electrode via a second layer of interposed solid insulating material.
5. A device according to claim 4 , wherein the nanotube, the source electrode, the gate electrode and the drain electrode are arranged such that a middle portion of the nanotube, between the first and second end portions, bridges a gap between the source electrode and the drain electrode, the middle portion of the nanotube being positioned generally above the gate electrode.
6. A device according to claim 4 , wherein the nanotube is in first capacitive contact with the source electrode, in second capacitive contact with the gate electrode and in third capacitive contact with the drain electrode, wherein the capacitances of the first capacitive contact and the third capacitive contact are greater than the capacitance of the second capacitive contact.
7. A device according to claim 1 , wherein the source electrode, the gate electrode and the drain electrode are located on a surface of a substrate.
8. A device according to claim 1 , wherein the gate electrode is located generally between the source electrode and the drain electrode.
9. A device according to claim 1 , wherein the device has a resonant frequency, the resonant frequency being changeable by applying a bias voltage to the gate electrode.
10. A tuneable filter comprising a device according to claim 1 .
11. A voltage controlled oscillator comprising a device according to claim 1 .
12. A mobile terminal comprising a device according to claim 1 .
13. A device comprising a nanotube configured as a resonator, a source electrode, a gate electrode, a drain electrode and at least one reactive element, wherein the at least one reactive element is configured to minimize energy loss due to a contact resistance between at least the source electrode and the nanotube, and wherein the at least one reactive element consists of one or more capacitive elements, or one or more inductive elements.
14. A device according to claim 13 , wherein the source electrode, the gate electrode and the drain electrode are located on a surface of a substrate.
15. A device according to claim 13 , wherein the gate electrode is located generally between the source electrode and the drain electrode.
16. A device according to claim 13 , wherein the device has a resonant frequency, the resonant frequency being changeable by applying a bias voltage to the gate electrode.
17. A tuneable filter comprising a device according to claim 13 .
18. A voltage controlled oscillator comprising a device according to claim 13 .
19. A mobile terminal comprising a device according claim 13 .
20. A device comprising a nanotube configured as a resonator, a source electrode, a gate electrode, a drain electrode and at least one impeding element, wherein the at least one impeding element is configured to minimize energy loss due to a contact resistance between at least the source electrode and the nanotube, wherein the impeding element comprises a layer of solid insulating material and a first end portion of the nanotube is fixed to the source electrode via the layer of solid insulating material, the layer of solid insulating material being interposed between the nanotube and the source electrode.
21. A device according to claim 20 , wherein the nanotube, the source electrode, the gate electrode and the drain electrode are arranged such that a second end portion of the nanotube extends from the source electrode above the gate electrode and the drain electrode.
22. A device according to claim 20 , wherein the nanotube is in first capacitive contact with the source electrode, in second capacitive contact with the gate electrode and in third capacitive contact with the drain electrode, wherein the capacitance of the first capacitive contact is greater than the capacitance of the second and third capacitive contacts.
23. A device comprising a nanotube configured as a resonator, a source electrode, a gate electrode, a drain electrode and at least one impeding element, wherein the at least one impeding element is configured to minimize energy loss due to a contact resistance between at least the source electrode and the nanotube, wherein the at least one impeding element comprises a first layer of solid insulating material and a second layer of solid insulating material, and wherein a first end portion of the nanotube is fixed to the source electrode via the first layer of solid insulating material, the first layer of insulating material being interposed between the first end portion of the nanotube and the source electrode, and a second end portion of the nanotube is fixed to the drain electrode via the second the layer of solid insulating material, the second layer of insulating material being interposed between the second end portion of the nanotube and the drain electrode.
24. A device according to claim 23 , wherein the nanotube, the source electrode, the gate electrode and the drain electrode are arranged such that a middle portion of the nanotube, between the first and second end portions, bridges a gap between the source electrode and the drain electrode, the middle portion of the nanotube being positioned generally above the gate electrode.
25. A device according to claim 23 , wherein the nanotube is in first capacitive contact with the source electrode, in second capacitive contact with the gate electrode and in third capacitive contact with the drain electrode, wherein the capacitances of the first capacitive contact and the third capacitive contact are greater than the capacitance of the second capacitive contact.
26. A device comprising a nanotube configured as a resonator, a source electrode, a gate electrode, a drain electrode and at least one reactive element, wherein the at least one reactive element is configured to minimize energy loss due to a contact resistance between at least the source electrode and the nanotube, wherein the at least one reactive element comprises an inductive element, the inductive element being connected in series with the source electrode.
27. A device according to claim 26 , wherein the nanotube is arranged such that a first end portion of the nanotube is in contact with a surface of the source electrode and a second end portion of the nanotube extends from the source electrode generally above the gate electrode and the drain electrode.
28. A device according to claim 26 , wherein the at least one reactive element further comprises:
a second inductive element, wherein the second inductive element is connected in series with the drain electrode.
29. A device according to claim 28 , wherein the nanotube is arranged such that a first end portion of the nanotube is in contact with a surface of the source electrode and a second end portion of the nanotube is in contact with a surface of the drain electrode, and a middle portion of the nanotube, between the first and second end portions, bridges a gap between the source electrode and drain electrode, the middle portion of the nanotube being positioned generally above the gate electrode.
30. A method comprising:
providing a substrate;
forming, on the substrate, a source electrode, a gate electrode and a drain electrode;
forming a layer of solid insulating material in contact with a surface of the source electrode; and
fixing an end portion of a nanotube to an opposite surface, to that in contact with the source electrode, of the layer of solid insulating material.
31. A method according to claim 30 , wherein forming the electrodes comprises forming the gate electrode generally between the source electrode and the drain electrode.
32. A method according to claim 30 , wherein fixing an end portion of a nanotube, further comprises fixing a first end portion of the nanotube to the layer of solid insulating material, a second end portion of the nanotube extending generally above the gate electrode and the drain electrode.
33. A method according to claim 32 , wherein fixing the nanotube comprises growing the nanotube on the layer of solid insulating material from seed.
34. A method according to claim 30 , further comprising:
forming a second layer of solid insulating material in contact with a surface of the drain electrode; and
fixing an opposite end portion of the nanotube to an opposite surface, to that in contact with the drain electrode, of the second layer of solid insulating material.