IP Library Granted Patent US 7,875,880
Granted Patent B2
US 7,875,880 · App. 12/036,144 · Granted Jan 25, 2011

Light emitting display device having a dummy pixel and method for fabricating the same

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Quick Facts
Patent No.
US 7,875,880
App. No.
12/036,144
Granted
Jan 25, 2011
Kind
B2
Abstract

Disclosed are a light emitting display and a method for fabricating the same. The light emitting display includes a substrate. A thin film transistor is formed on a first region of the substrate, and includes a semiconductor layer, a gate electrode, and source/drain electrodes. An organic light emitting diode is electrically coupled to the thin film transistor and includes a first electrode, an emission layer, and a second electrode. A dummy pixel, formed in a second region of the substrate, includes at least one dummy pattern. The dummy pattern is formed of the same material as that of one of the semiconductor layer, the gate electrode, the source/drain electrodes, and the first electrode.

Claims (13)

1. A light emitting display device, comprising:

a substrate;

a thin film transistor formed on a first region of the substrate, and including a semiconductor layer, a gate electrode, and source/drain electrodes wherein the thin film transistor is covered by at least one layer;

an organic light emitting diode electrically coupled to the thin film transistor and including a first electrode, an emission layer, and a second electrode; and

a dummy pixel including at least one dummy pattern, wherein

the dummy pixel is formed in a second region of the substrate wherein the dummy pixel is different than the thin film transistor and includes a dummy pattern and one surface of the dummy pattern is exposed through the opening in the at least one layer, and

the at least one dummy pattern is formed of the same material as one of the semiconductor layer, the gate electrode, the source/drain electrodes, and the first electrode and wherein at least one opening is formed in the at least one layer so that one surface of the dummy pattern formed of the same material as one of the semiconductor layer, the gate electrode, the source/drain electrodes and the first electrode is exposed.

2. The light emitting display device as claimed in claim 1 , wherein the exposed surface of the dummy pattern is formed of the same material as the semiconductor layer.

3. The light emitting display device as claimed in claim 1 , wherein the exposed surface of the dummy pattern is formed of the same material as the gate electrode.

4. The light emitting display device as claimed in claim 1 , wherein the exposed surface of the dummy pattern is formed of the same material as the source/drain electrodes.

5. The light emitting display device as claimed in claim 1 , wherein the exposed surface of the dummy pattern is formed of the same material as the first electrode.

6. The light emitting display device as claimed in claim 1 , comprising a plurality of dummy pixels, wherein one surface of each dummy pattern is exposed through a respective opening.

7. The light emitting display device as claimed in claim 1 , wherein a test pattern is formed on a third region of the substrate, configured for testing an electrical characteristic of the thin film transistor.

Assignments (3)
MERGER Recorded Aug 31, 2012
From: SAMSUNG MOBILE DISPLAY CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 028921/0334 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 10, 2008
From: SAMSUNG SDI CO., LTD.
To: SAMSUNG MOBILE DISPLAY CO., LTD.
Reel/Frame 022552/0192 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 25, 2008
From: LEE, HONG-RO
To: SAMSUNG SDI CO., LTD.
Reel/Frame 020559/0736 →