Cleaving edge-emitting lasers from a wafer cell
View Patent ↗In one example embodiment, a process for cleaving a wafer cell includes several acts. First a wafer cell is affixed to an adhesive film. Next, the adhesive film is stretched substantially uniformly. Then, the adhesive film is further stretched in a direction that is substantially orthogonal to a predetermined reference direction. Next, the wafer cell is scribed to form a notch that is oriented substantially parallel to the predetermined reference direction. Finally, the wafer cell is cleaved at a location substantially along the notch.
1. A process for cleaving lasers, the process comprising:
affixing a wafer cell comprising two or more lasers to an adhesive film;
stretching the adhesive film uniformly;
further stretching the adhesive film in a direction that is orthogonal to a notch orientation;
scribing the wafer cell to form a notch that is oriented parallel to the notch orientation; and
cleaving the wafer cell at a location along the notch such that two or more of the lasers are separated from each other, wherein the adhesive film has a level of adhesion between about 90 g/25 mm and about 100 g/25 mm.
2. The process as recited in claim 1 , wherein the adhesive film has a thickness of about 80 μm.
3. The process as recited in claim 1 , wherein each of the lasers have facets at the cleaving location free from metallic contamination and microstep defects.
4. The process as recited in claim 1 , wherein each of the lasers comprises a Fabry-Perot ridge waveguide laser or a distributed feedback ridge waveguide laser.
5. The process as recited in claim 1 , wherein the notch orientation is aligned with a crystal plane of the wafer cell.
6. A process for cleaving lasers, the process comprising:
affixing a wafer cell comprising two or more lasers to an adhesive film;
stretching the adhesive film uniformly;
further stretching the adhesive film in a direction that is orthogonal to a notch orientation;
scribing the wafer cell to form a notch that is oriented parallel to the notch orientation; and
cleaving the wafer cell at a location along the notch such that two or more of the lasers are separated from each other, wherein stretching the adhesive film uniformly comprises stretching the adhesive film uniformly with tensile forces between about 200 g and about 300 g being exerted on the adhesive film.
7. A process for cleaving lasers, the process comprising:
affixing a wafer cell comprising two or more lasers to an adhesive film;
stretching the adhesive film uniformly;
further stretching the adhesive film in a direction that is orthogonal to a notch orientation;
scribing the wafer cell to form a notch that is oriented parallel to the notch orientation; and
cleaving the wafer cell at a location along the notch such that two or more of the lasers are separated from each other, wherein stretching the adhesive film in a direction that is orthogonal to the notch orientation comprises stretching the adhesive film in a direction that is orthogonal to the notch orientation with tensile forces between about 400 g and about 600 g being exerted on the adhesive film.
8. A process for cleaving edge-emitting lasers, the process comprising:
affixing a wafer cell comprising two or more edge-emitting lasers to an adhesive film having adhesion between about 90 g/25 mm and about 100 g/25 mm;
stretching the adhesive film uniformly with a tensile force between about 200 g and about 300 g being exerted on the adhesive film;
further stretching the adhesive film in a direction that is orthogonal to a notch orientation, with a tensile force between about 400 g and about 600 g being exerted on the adhesive film;
scribing the wafer cell with a diamond tipped instrument to form a notch that is oriented parallel to the notch orientation; and
cleaving the wafer cell to a depth between about 30 μm and about 50 μm at a location along the notch, wherein the cleaving is performed with a cleaving blade exerting a force against the wafer cell for between about 80 microseconds and about 300 microseconds.
9. The process as recited in claim 8 , wherein stretching the adhesive film uniformly is accomplished using a metal ring frame.
10. The process as recited in claim 8 , wherein the adhesive film has a thickness of about 80 μm.
11. The process as recited in claim 8 , wherein each of the lasers have facets at the cleaving location free from metallic contamination and microstep defects.
12. The process as recited in claim 8 , wherein each of the edge-emitting lasers comprises a Fabry-Perot ridge waveguide laser or a distributed feedback ridge waveguide laser.
13. The process as recited in claim 8 , wherein the notch orientation is aligned with a crystal plane of the wafer cell.