Semiconductor device and manufacturing method of the semiconductor device
View Patent ↗A semiconductor device where an outside connection terminal of a semiconductor element and an electrode of a wiring board are connected to each other via a conductive adhesive, the conductive adhesive includes a first conductive adhesive; and a second conductive adhesive covering the first conductive adhesive; wherein the first conductive adhesive contains a conductive filler including silver (Ag); and the second conductive adhesive contains a conductive filler including a metal selected from a group consisting of tin (Sn), zinc (Zn), cobalt (Co), iron (Fe), palladium (Pd), and platinum (Pt).
1. A manufacturing method of a semiconductor device, comprising:
forming a first conductive adhesive containing a conductive filler including silver (Ag) on an outside connection terminal of a semiconductor element;
forming a second conductive adhesive on a surface of the first conductive adhesive, the second conductive adhesive containing a conductive filler including a metal selected from a group consisting of tin (Sn), zinc (Zn), cobalt (Co), iron (Fe), palladium (Pd), and platinum (Pt); and
connecting the outside connection terminal of the semiconductor element to an electrode formed on a wiring board via a conductive adhesive composed of the first conductive adhesive and the second conductive adhesive.
2. The manufacturing method of the semiconductor device as claimed in claim 1 , further comprising:
curing the first conductive adhesive after forming the first conductive adhesive.
3. The manufacturing method of the semiconductor device as claimed in claim 1 , further comprising:
curing the second conductive adhesive after forming the second conductive adhesive.
4. The manufacturing method of the semiconductor device as claimed in claim 3 ,
wherein the second conductive adhesive is cured while a force is applied by a leveling process.
5. The manufacturing method of the semiconductor device as claimed in claim 1 , further comprising:
supplying an underfill material on the wiring board before connecting the outside connection terminal of the semiconductor element to the electrode formed on the wiring board.
6. The manufacturing method of the semiconductor device as claimed in claim 1 , further comprising:
supplying an underfill material to a gap between the semiconductor element and the wiring board after connecting the outside connection terminal of the semiconductor element to the electrode formed on the wiring board.
7. The manufacturing method of the semiconductor device as claimed in claim 1 ,
wherein the connecting the outside connection terminal of the semiconductor element to the electrode formed on the wiring board is performed with heating;
an oxide film of a metal contained in the second conductive adhesive is formed on an external surface of the second conductive adhesive in the heating.
8. The manufacturing method of the semiconductor device as claimed in claim 1 ,
wherein the conductive filler of the first conductive adhesive is silver (Ag) or a mixture or an alloy containing silver (Ag).
9. The manufacturing method of the semiconductor device as claimed in claim 1 ,
wherein the conductive filler of the second conductive adhesive is tin (Sn) or a mixture or an alloy containing tin (Sn).
10. The manufacturing method of the semiconductor device as claimed in claim 1 ,
wherein the second conductive adhesive further contains resin.
11. The manufacturing method of the semiconductor device as claimed in claim 10 ,
wherein the resin is made of a material selected from a group consisting of an epoxy composition, an acrylic composition, a vinyl composition, and a thermosetting composition.
12. The manufacturing method of the semiconductor device as claimed in claim 5 ,
wherein the underfill material is made of a material selected from a group consisting of epoxy resin, polyimide resin, acrylic resin, and silicon resin.