IP Library Granted Patent US 8,552,698
Granted Patent B2
US 8,552,698 · App. 12/039,178 · Granted Oct 8, 2013

High voltage shunt-regulator circuit with voltage-dependent resistor

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Quick Facts
Patent No.
US 8,552,698
App. No.
12/039,178
Granted
Oct 8, 2013
Kind
B2
Abstract

A voltage regulator circuit comprising a first circuit functioning as a voltage dependent resistor, the first circuit having an input coupled to a voltage source and an output and having a resistance dependent on the voltage applied across the circuit by the voltage source such that the resistance increases as the applied voltage increases; and a regulator coupled to the output of the first circuit for providing a regulated output voltage.

Claims (28)

1. A voltage regulator circuit comprising:

a first circuit functioning as a voltage dependent resistor, the first circuit having an input coupled to a voltage source and an output and having a first circuit resistance dependent on an applied voltage applied across the first circuit by the voltage source such that the first circuit resistance increases as the applied voltage increases; and

a regulator coupled to the output of the first circuit for providing a regulated output voltage;

the first circuit comprising a MOS transistor and a series JFET, wherein the voltage source is connected to both the MOS transistor and the series JFET at a single node, and wherein the series JFET has its main terminals connected in series with main terminals of the MOS transistor.

2. The voltage regulator circuit of claim 1 , wherein the first circuit resistance increases at an increasing rate as the applied voltage increases, thereby causing a first circuit current through the first circuit to saturate.

3. The voltage regulator circuit of claim 2 , wherein the first circuit comprises the MOS transistor and the series JFET functioning as the voltage dependent resistor, the series JFET having a conduction channel that pinches off with increasing voltage of the voltage source such that a channel of the series JFET will saturate at a certain applied voltage.

4. The voltage regulator circuit of claim 3 , wherein the series JFET is an internal JFET of the MOS transistor.

5. The voltage regulator circuit of claim 4 , wherein the MOS transistor is a PMOS transistor and the series JFET is a P-JFET.

6. The voltage regulator circuit of claim 3 , wherein the output of the first circuit comprises a main terminal of said series JFET, said main terminal of said JFET being coupled to said regulator.

7. The voltage regulator circuit of claim 1 , wherein said MOS transistor has a gate coupled to a biasing circuit for biasing the MOS transistor in a triode region of operation.

8. The voltage regulator circuit of claim 7 , wherein the biasing circuit comprises at least one zener diode.

9. The voltage regulator circuit of claim 8 , wherein the biasing circuit comprises a current source circuit coupled to said at least one zener diode for providing a biasing current to said gate of said MOS transistor.

10. The voltage regulator circuit of claim 9 , wherein said current source circuit comprises a current mirror circuit defining a reference current in a further resistance disposed between the voltage source and the current mirror circuit.

11. The voltage regulator circuit of claim 10 , wherein said further resistance comprises a first resistance and a second resistance.

12. The voltage regulator circuit of claim 11 , further comprising a further zener diode in series with said first and second resistances.

13. The voltage regulator circuit of claim 10 , wherein said at least one zener diode is in parallel connection with said further resistance in series with said current mirror circuit.

14. The voltage regulator circuit of claim 9 , wherein said at least one zener diode comprises a stack of series-connected zener diodes.

15. The voltage regulator circuit of claim 1 , wherein said regulator comprises a shunt regulator.

16. The voltage regulator circuit of claim 1 , wherein a substrate of the MOS transistor is coupled to the voltage source, a gate of the series JFET being coupled to the substrate.

17. The voltage regulator circuit of claim 1 , wherein the series JFET has a gate coupled to the voltage source, and wherein the MOS transistor is connected in series with a core resistance.

18. A voltage regulator circuit comprising:

a first circuit functioning as a voltage dependent resistor, the first circuit having an input coupled to a voltage source and an output and having a first circuit resistance dependent on an applied voltage applied across the first circuit by the voltage source such that the first circuit resistance increases as the applied voltage increases; and

a regulator coupled to the output of the first circuit for providing a regulated output voltage;

the first circuit comprising a MOS transistor and a series JFET functioning as the voltage dependent resistor, wherein the series JFET is an internal JFET of the MOS transistor.

19. A voltage regulator circuit comprising:

a first circuit functioning as a voltage dependent resistor, the first circuit having an input coupled to a voltage source and an output and having a first circuit resistance dependent on an applied voltage applied across the first circuit by the voltage source such that the first circuit resistance increases as the applied voltage increases; and

a regulator coupled to the output of the first circuit for providing a regulated output voltage;

the first circuit comprising a MOS transistor and a series JFET functioning as the voltage dependent resistor, wherein said MOS transistor has a gate coupled to a biasing circuit for biasing the MOS transistor in a triode region of operation.

Assignments (2)
CHANGE OF NAME Recorded Jul 23, 2018
From: INTERNATIONAL RECTIFIER CORPORATION
To: INFINEON TECHNOLOGIES AMERICAS CORP.
Reel/Frame 046612/0968 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2008
From: CHOW, MELVIN KIT HO
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 020947/0094 →