SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING IT

1 - 3 . (canceled)

4 . A process for producing a silicon single crystal with a <113> orientation, comprising

pulling the silicon single crystal using a Czochralski method in the form of an ingot which is suspended from a dash seed and has two conical end pieces, and

one of said conical end pieces is connected to the dash seed.

5 . The process as claimed in claim 4 , comprising

pulling the silicon single crystal in a furnace with a pulling rate, and the pulling rate is at most 90% of a rate at which a <100> orientation silicon single crystal can be pulled without dislocations in the furnace.

6 . The process as claimed in claim 4 ,

wherein the dash seed has a length of at most 70 mm and a diameter of at most 5 mm at its narrowest point, and the end piece which is connected to the dash seed is at least 30 mm longer than a corresponding end piece of a single crystal with a <100> orientation.

7 . In a method for the production of semiconductor wafers which are selected from a group which includes semiconductor wafers with one or two polished side faces, semiconductor wafers with an epitaxial coating, semiconductor wafers which have been subjected to a heat treatment and semiconductor wafers which have been coated in some other way, the improvement which comprises

utilizing the silicon single crystal as claimed in claim 1 for said production.