IP Library Granted Patent US 7,573,062
Granted Patent B2
US 7,573,062 · App. 12/039,875 · Granted Aug 11, 2009

Thin-film transistor, thin-film transistor sheet and their manufacturing method

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Quick Facts
Patent No.
US 7,573,062
App. No.
12/039,875
Granted
Aug 11, 2009
Kind
B2
Abstract

Disclosed are a process of manufacturing a thin-film transistor sheet and a thin-film transistor sheet manufactured by the process, the process comprising the steps of providing a gate busline on a substrate, providing, on the surface of the substrate on the gate busline side, an insulation layer capable of receiving a fluid electrode material, supply the fluid electrode material to the insulation layer, the fluid electrode material being allowed to permeate the insulation layer, forming a gate electrode from the permeated fluid electrode material to be in contact with the gate busline, forming a gate insulating layer on the gate electrode, and forming a semiconductor layer on the gate insulating layer.

Claims (9)

1. A thin-film transistor comprising:

a substrate;

an insulation layer containing an insulation material selected from the group consisting of gelatin, a water soluble polymer other than gelatin, latexes, polyurethanes, and inorganic or organic particles, and a gate electrode containing both the insulation material and an electrode material selected from the group consisting of an electrically conductive polymer and metal particles, the insulation layer and the gate electrode being provided on the substrate;

a gate insulating layer provided on the insulation layer and gate electrode to be in physical contact with an upper surface of the gate electrode and insulation layer opposite the substrate;

a semiconductor layer on the gate insulating layer;

and a source electrode and a drain electrode connecting each other through the semiconductor layer.

2. The thin-film transistor of claim 1 , wherein the substrate is comprised of a resin.

3. The thin-film transistor of claim 1 , wherein the electrode material is a solution of an electrically conductive polymer or a dispersion liquid of an electrically conductive polymer.

4. The thin-film transistor of claim 1 , wherein the gate electrode is one formed by allowing the electrode material in the form of fluid to permeate the insulation material.

Assignments (3)
QUITCLAIM ASSIGNMENT Recorded Sep 18, 2025
From: FLEX DISPLAY SOLUTIONS, LLC
To: EDISON INNOVATIONS LLC
Reel/Frame 072942/0422 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2020
From: MONUMENT PEAK VENTURES, LLC
To: FLEX DISPLAY SOLUTIONS, LLC
Reel/Frame 052793/0554 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 1, 2018
From: KONICA MINOLTA, INC.
To: MONUMENT PEAK VENTURES, LLC
Reel/Frame 046530/0270 →