Electronic device, resonator, oscillator and method for manufacturing electronic device
View Patent ↗An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.
1. An electronic device comprising a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein
the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.
2. The electronic device according to claim 1 , wherein the corrosion-resistant layer is configured by a part of the first covering layer in a thickness direction thereof.
3. The electronic device according to claim 1 , wherein the corrosion-resistant layer is composed of TiN, Ti, W, Au, Pt or an alloy thereof.
4. The electronic device according to claim 1 , wherein the corrosion-resistant layer is configured of a layer provided in the uppermost layer of the first covering layer.
5. The electronic device according to claim 1 , wherein the corrosion-resistant layer is configured of a layer provided in the lowermost layer of the first covering layer.
6. The electronic device according to claim 1 , wherein the corrosion-resistant layer is configured of layers provided in the uppermost layer and lowermost layer of the first covering layer.
7. The electronic device according to claim 1 , wherein the first covering layer is of a laminated structure in which a Ti layer, a TiN layer, an Al—Cu layer and a TiN layer are laminated in this order from the surface facing at the cavity part.
8. The electronic device according to claim 1 , wherein the first covering layer is of a laminated structure in which a TiN layer, an Al—Cu layer, a Ti layer and a TiN layer are laminated in this order from the surface facing at the cavity part.
9. The electronic device according to claim 1 , wherein the first covering layer is of a laminated structure in which a Ti layer, a TiN layer, an Al—Cu layer, a Ti layer and a TiN layer are laminated in this order from the surface facing at the cavity part.
10. The electronic device according to claim 1 , wherein the first covering layer is of a laminated structure in which a Ti layer, an Al—Cu layer and a TiN layer are laminated in this order from the surface facing at the cavity part.
11. The electronic device according to claim 1 , wherein the first covering layer is of a laminated structure in which a TiN layer, an Al—Cu layer and a TiN layer are laminated in this order from the surface facing at the cavity part.
12. An electronic device comprising a substrate having a functional structural body provided in the inside of a cavity part and a CMOS circuit part placed side by side on the substrate, wherein
a covering structure for defining the cavity part is provided with a side wall comprising an interlayer insulating layer surrounding the cavity part and a wiring layer and a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and
at least one of the interlayer insulating layer and the wiring layer is a part of an interlayer insulating layer or a wiring layer of the CMOS circuit part.
13. A resonator comprising a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein
the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.
14. An oscillator comprising a substrate having a functional structural body provided in the inside of a cavity part and an oscillation circuit-containing CMOS circuit part placed side by side on the substrate, wherein
a covering structure for defining the cavity part is provided with a side wall comprising an interlayer insulating layer surrounding the cavity part and a wiring layer and a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and
at least one of the interlayer insulating layer and the wiring layer is a part of an interlayer insulating layer or a wiring layer of the CMOS circuit part.
15. A method for manufacturing an electronic device including a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, comprising
a functional structural forming process of forming the functional structural body together with a sacrifice layer on the substrate;
an interlayer insulating layer forming process of forming an interlayer insulating layer in the periphery including an upper part of the functional structural body;
a first covering layer forming process of forming a first covering layer composed of a laminated structure including a corrosion-resistant layer on the interlayer insulating layer and having an opening;
a release process of removing the interlayer insulating layer and the sacrifice layer on the functional structural body through the opening; and
a second covering layer forming process of forming a second covering layer for closing the opening.
16. A method for manufacturing an electronic device including a substrate having a functional structural body provided in the inside of a cavity part and a CMOS circuit part placed side by side on the substrates comprising
forming the functional structural body together with a sacrifice layer on the substrate;
forming a CMOS transistor;
forming an interlayer insulating layer in the periphery including an upper part of the functional structural body and an upper part of the CMOS transistor;
forming a first covering layer for covering the cavity part and having an opening, a wiring layer connected to the functional structural body and a wiring layer connected to the CMOS transistor in an upper part of the interlayer insulating layer;
forming a passivation membrane in the periphery including the first covering layers the wiring layer connected to the functional structural body and the wiring layer connected to the CMOS transistor;
removing the interlayer insulating layer and the sacrifice layer on the functional structural body through the opening; and
forming a second covering layer for closing the opening.