IP Library Patent Application 12049159
Patent Application
App. No. 12/049,159

SMOOTHING A METALLIC SUBSTRATE FOR A SOLAR CELL

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Patent No.
US None
App. No.
12/049,159
Abstract

A method for smoothing the surface of a metallic substrate. The method includes providing a metallic substrate and smoothing a surface of the metallic substrate by irradiating the surface with a high-intensity energy source, such that the surface is smoothed to remove defects from the surface by creating an altered surface layer. The altered surface layer is configured to receive at least one layer in a fabrication process of an electronic device.

Claims (39)

1 . A method for smoothing the surface of a metallic substrate, said method comprising:

providing a metallic substrate; and

smoothing a surface of said metallic substrate by irradiating said surface with a high-intensity energy source, such that said surface is smoothed to remove defects from said surface by creating an altered surface layer;

wherein said altered surface layer is configured to receive at least one layer in a fabrication process of an electronic device.

2 . The method recited in claim 1 , wherein said electronic device comprises a solar cell.

3 . The method recited in claim 1 , wherein said at least one layer comprises copper indium gallium diselenide (CIGS).

4 . The method recited in claim 1 , wherein said smoothing further comprises a laser smoothing.

5 . The method recited in claim 4 , wherein said laser smoothing further comprises a process selected from a group consisting of a laser ablation process, a laser melting-resolidification process, and a laser-induced, surface-alloying process.

6 . The method recited in claim 1 , further comprising:

depositing a surface-treatment layer on said metallic substrate.

7 . The method recited in claim 1 , wherein said high-intensity energy source further comprises a laser selected from a group consisting of a Q-switched laser, a Q-switched Nd:YAG laser, a Q-switched fiber laser, a Q-switched disc laser, a Q-switched slab laser, a carbon-dioxide laser, a pulsed laser, a contilluous-wave laser, and a diode laser.

8 . A method for fabricating a solar cell, said method comprising:

providing a metallic substrate;

smoothing a surface of said metallic substrate by irradiating said surface with a high-intensity energy source, wherein said surface is smoothed to remove defects from said surface by creating an altered surface layer, and wherein said altered surface layer is configured to receive at least one layer in a fabrication process of a solar cell; and

depositing an absorber layer on said metallic substrate.

9 . The method recited in claim 8 , wherein said absorber layer further comprises copper indium gallium diselenide (CIGS).

10 . The method recited in claim 8 , wherein said smoothing further comprises a laser smoothing.

11 . The method recited in claim 10 , wherein said laser smoothing further comprises a process selected from a group consisting of a laser ablation process, a laser melting-resolidification process, and a laser-induced, surface-alloying process.

12 . The method recited in claim 8 , wherein said high-intensity energy source further comprises a laser selected from a group consisting of a Q-switched laser, a Q-switched Nd:YAG laser, a Q-switched fiber laser, a Q-switched disc laser, a Q-switched slab laser, carbon-dioxide laser, a pulsed laser, a continuous-wave laser, and a diode laser.

13 . A solar cell, comprising:

a metallic substrate, a surface of said metallic substrate smoothed by irradiating said surface with a high-intensity energy source, wherein said surface is smoothed to remove defects from said surface by creating an altered surface layer; and,

an absorber layer disposed on said altered surface layer.

14 . The solar cell of claim 13 , wherein said absorber layer further comprises copper indium gallium diselenide (CIGS).

15 . A method for roll-to-roll smoothing the surface of a substrate, said method comprising:

providing a substrate in roll form from a roll of material; and

smoothing a surface of said substrate by irradiating said surface with a high-intensity energy source, such that said surface is smoothed to remove defects from said surface by creating an altered surface layer;

wherein said altered surface layer is configured to receive at least one layer in a fabrication process of an electronic device.

16 . The method recited in claim 15 , wherein said substrate is selected from a group consisting of a metallic substrate and a metallized substrate.

17 . The method recited in claim 16 , wherein said electronic device comprises a solar cell.

18 . The method recited in claim 15 , wherein said smoothing further comprises a laser smoothing.

19 . The method recited in claim 18 , wherein said laser smoothing further comprises a process selected from a group consisting of a laser ablation process, a laser melting-resolidification process, and a laser-induced, surface-alloying process.

20 . The method recited in claim 15 , wherein said high-intensity energy source further comprises a laser selected from a group consisting of a Q-switched laser, a Q-switched Nd:YAG laser, a Q-switched fiber laser, a Q-switched disc laser, a Q-switched slab laser, a carbon-dioxide laser, a pulsed laser, a continuous-wave laser, and a diode laser.

21 . A solar cell, comprising:

a substrate, a surface of said substrate smoothed by irradiating said surface with a high-intensity energy source, wherein said surface is smoothed to remove defects from said surface by creating an altered surface layer; and,

an absorber layer disposed on said altered surface layer.

22 . The solar cell of claim 21 , wherein said absorber layer further comprises copper indium gallium diselenide (CIGS).

23 . The solar cell of claim 21 , wherein said substrate is selected from a group consisting of a metallic substrate and a metallized substrate.

24 . The solar cell of claim 21 , wherein said substrate has a width of about 1 m and a thickness of less than about 125 μm.

25 . The solar cell of claim 21 , wherein said altered surface layer has a thickness of less than about 25 μM.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Jan 7, 2013
From: PINNACLE VENTURES, L.L.C.
To: MIASOLE
Reel/Frame 029579/0494 →
SECURITY AGREEMENT Recorded Aug 28, 2012
From: MIASOLE
To: PINNACLE VENTURES, L.L.C.
Reel/Frame 028863/0887 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NUMBER OF INVENTORS PREVIOUSLY RECORDED ON REEL 020656 FRAME 0560.ASSIGNOR(S) HEREBY CONFIRMS THE 5TH INVENTOR TO BE DALLAS W. MEYER Recorded Sep 29, 2010
From: CORNEILLE, JASON STEPHEN; CROFT, STEVEN THOMAS; WUDU, MULUGETA ZERFU; MCCOLL, WILLIAM JAMES; MEYER, DALLAS W.
To: MIASOLE
Reel/Frame 025065/0365 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NUMBER OF INVENTORS PREVIOUSLY RECORDED ON REEL 020656 FRAME 0560. ASSIGNOR(S) HEREBY THE 5TH INVENTOR THE TO BE DALLAS W. MEYER. Recorded Jul 12, 2010
From: COMELLO, JASON STEPHEN; CROFT, STEVEN THOMAS; WUDU, MULUGETA ZERFU; MCCOLL, WILLIAM JAMES; MEYER, DALLAS W.
To: MIASOLE
Reel/Frame 024702/0073 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 14, 2008
From: CORNEILLE, JASON STEPHAN; CROFT, STEVEN THOMAS; WUDU, MULUGETA ZERFU; MCCOLL, WILLIAM JAMES
To: MIASOLE
Reel/Frame 020656/0560 →