PATTERNED LIGHT EMITTING DEVICES
Light-emitting devices, and related components, systems and methods are disclosed. A light-emitting device can include a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region. During use of the light-emitting device, light generated by the light-generating region can emerge from the light-emitting device via a surface of the first layer. The light-emitting device can have an edge which is at least about one millimeter long and can be designed so that a quantum efficiency of the light-emitting device is substantially independent of the length of the edge.
1 . A light emitting diode comprising:
a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region so that, during use of the light emitting diode, light generated by the light-generating region can emerge from the light emitting diode via a surface of the first layer, wherein the surface of the first layer has a dielectric function that varies spatially according to a pattern, wherein the light emitting diode is designed so that a quantum efficiency of the light emitting diode is substantially independent of a length of an edge of the multi-layer stack of materials;
a reflective layer disposed under the multi-layer stack of materials and capable of reflecting at least 50% of light generated by the light-generating region that impinges on the reflective layer; and
a transparent cover disposed over the surface of the first layer,
wherein the light emitting diode is encapsulant-free.
2 . The light emitting diode of claim 1 , further comprising supports to which the transparent cover is attached to.
3 . The light emitting diode of claim 1 , further comprising a gas between the surface of the first layer and the transparent cover.
4 . The light emitting diode of claim 1 , wherein at least 50% of the total amount of light generated by the light-generating region that emerges from the light-emitting diode emerges from via the surface of the first layer.
5 . The light emitting diode of claim 1 , wherein the multi-layer stack of materials comprises a multi-layer stack of semiconductor materials.
6 . The light emitting diode of claim 1 , wherein the first layer comprises a layer of semiconductor material.
7 . The light emitting diode of claim 6 , wherein the first layer comprises a layer of n-doped semiconductor material, and the multi-layer stack further comprise a layer of p-doped semiconductor material.
8 . The light emitting diode of claim 1 , wherein the edge of the multi-layer stack of materials is at least one millimeter long.
9 . The light emitting diode of claim 8 , wherein the multi-layer stack includes at least one additional edge having a length of at least one millimeter.
10 . The light emitting diode of claim 1 , wherein the edge of the multi-layer stack of materials is at least two millimeters long.
11 . The light emitting diode of claim 1 , wherein the transparent cover is configured to provide protection of the multi-layer stack of materials.
12 . The light emitting diode of claim 1 , wherein the index of refraction of the first layer is substantially similar to the index of refraction of the light-generating region.
13 . The light emitting diode of claim 1 , wherein the pattern is periodic.
14 . The light emitting diode of claim 1 , wherein the pattern comprises a plurality of holes in the first layer.
15 . The light emitting diode of claim 1 , wherein the pattern does not extend beyond the first layer.
16 . The light emitting diode of claim 15 , wherein the pattern comprises a plurality of holes in the first layer.
17 . The light emitting diode of claim 1 , wherein the light emitting diode is configured to emit substantially UV light.
18 . The light emitting diode of claim 1 , further comprising electrical contact configured to vertically inject current into the light emitting diode.
19 . The light emitting diode of claim 1 , further comprising a phosphor material supported by the surface of the first layer, and wherein sidewalls of the multi-layer stack of materials are substantially devoid of phosphor.
20 . A method of forming a light emitting diode, the method comprising:
providing a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region so that, during use of the light emitting diode, light generated by the light-generating region can emerge from the light emitting diode via a surface of the first layer, wherein the surface of the first layer has a dielectric function that varies spatially according to a pattern, wherein the light emitting diode is designed so that a quantum efficiency of the light emitting diode is substantially independent of a length of an edge of the multi-layer stack of materials;
providing a reflective layer disposed under the multi-layer stack of materials and capable of reflecting at least 50% of light generated by the light-generating region that impinges on the reflective layer; and
providing a transparent cover disposed over the surface of the first layer,
wherein the light emitting diode is encapsulant-free.