SOLAR CELL

1 . A photovoltaic cell comprising:

a semiconductor base;

a semiconductor mesa extending from the semiconductor base, the semiconductor mesa comprising a top surface and a side wall;

a dielectric, a first portion of the dielectric disposed on the top surface, a second portion of the dielectric disposed on the side wall, and a third portion of the dielectric disposed on the base; and

conductive material disposed on the top surface of the mesa and on the dielectric,

wherein the conductive material covers the first portion of the dielectric, the second portion of the dielectric, and a portion of the third portion.

2 . A photovoltaic cell according to claim 1 , wherein the semiconductor mesa comprises an optically-active semiconductor area, and

wherein the conductive material is disposed in a pattern over the optically-active semiconductor area, the pattern defining a field to receive photons into the optically-active semiconductor area.

3 . A photovoltaic cell according to claim 1 , wherein the dielectric is continuous around a perimeter of the semiconductor mesa.

4 . A photovoltaic cell according to claim 3 , wherein the conductive material is continuous around the perimeter of the semiconductor mesa.

5 . A photovoltaic cell according to claim 1 , wherein the conductive material exhibits a first polarity, the cell further comprising:

a conductive contact in contact with a top surface of the mesa,

wherein the conductive contact exhibits a second polarity.

6 . A photovoltaic cell according to claim 5 , wherein the semiconductor defines a lip adjacent to the conductive contact, and

wherein the dielectric overlaps a side wall of the lip.

7 . A photovoltaic cell according to claim 5 , wherein the semiconductor mesa comprises an optically-active semiconductor area,

wherein the conductive material is disposed in a pattern over the optically-active semiconductor area, the pattern defining a field to receive photons into the optically-active semiconductor area, and

wherein the field is asymmetric about a center point of the optically-active semiconductor area.

8 . A method comprising:

fabricating a semiconductor base and a semiconductor mesa extending from the semiconductor base, the semiconductor mesa comprising an optically-active semiconductor area, a top surface and a side wall;

depositing a dielectric, a first portion of the dielectric deposited on the top surface, a second portion of the dielectric deposited on the side wall, and a third portion of the dielectric deposited on the base; and

depositing conductive material on the top surface of the mesa and on the dielectric,

wherein the conductive material covers the first portion of the dielectric, the second portion of the dielectric, and a portion of the third portion.

9 . A method according to claim 8 , wherein the conductive material is disposed in a pattern over the optically-active semiconductor area, the pattern defining a field to receive photons into the optically-active semiconductor area, and

wherein the field is asymmetric about a center point of the optically-active semiconductor area.

10 . A method according to claim 8 , wherein the dielectric is continuous around a perimeter of the semiconductor mesa.

11 . A method according to claim 10 , wherein the conductive material is continuous around the perimeter of the semiconductor mesa.

12 . A method according to claim 8 , further comprising:

fabricating a conductive contact in contact with a top surface of the base,

wherein the conductive contact exhibits a polarity opposite from a polarity of the conductive material.

13 . A method according to claim 12 , wherein fabricating the semiconductor base comprises fabricating a lip at an outer edge of the semiconductor base and adjacent to a location of the conductive contact, and

wherein the dielectric overlaps a side wall of the lip.