Stacked SCR with high holding voltage
View Patent ↗Stacked SCR's are disclosed with a resistor connecting an internal portion of the upper SCR to an internal portion of the lower SCR. The anode of the protective circuit is connected to a contact on a target circuit to be protected and the cathode of the protective circuit is connected to ground or a reference voltage on the target circuit. The anode voltage is directed to the lower SCR via the resistor such that when the voltage on the anode reaches the triggering voltage of the lower SCR, that SCR triggers and that triggering triggers the upper SCR, such that the stacked SCR's both trigger and thereby limit the voltage between the anode and the cathode and thereby protecting the target circuit.
1. A protective circuit for a target circuit against an ESD event, the circuit comprising:
the protective circuit having an anode and a cathode, the anode connected to a contact on the target circuit;
the cathode connected to a reference contact on the circuit, wherein, when the protective circuit triggers due to the ESD event, the voltage between the contact and the reference contact on the target circuit is limited, thereby protecting the target circuit;
a first PNP transistor with an emitter connected to the anode, a collector connected to the base of a first NPN transistor, and a base connected to the collector of the first NPN transistor;
a first resistor connected from the anode to the base of the first PNP transistor;
the emitter of the first NPN transistor connected to the emitter and the base of a second PNP transistor and to the collector of a second NPN transistor;
the collector of the second PNP transistor connected to the base of the second NPN transistor, the emitter of the second NPN transistor connected to the cathode;
a second resistor connecting the base of the second NPN transistor to the cathode; and
a third resistor connecting the collector of the first NPN transistor to the collector of the second NPN transistor.
2. The protective circuit of claim 1 wherein the reference contact is ground.
3. The protective circuit for a target circuit of claim 1 wherein the first PNP and NPN and resistor form an upper SCR that is stacked on top of a second SCR comprises of the second PNP, NPN and resistor.
4. The protective circuit for a target circuit of claim 1 wherein the triggering voltage for the protective circuit is the triggering voltage for the second SCR, but wherein the holding voltage of the protective circuit is the sum of the holding voltages for the first SCR and the second SCR.
5. The protective circuit for a target circuit of claim 1 wherein the emitter of the first PNP transistor is a high dose p-type diffusion with a low dose p-type diffusion beneath the high dose p-type diffusion.
6. The protective circuit for a target circuit of claim 1 further comprising at least one of the high dose n-type and p-type diffusions have a low dose n-type and p-type diffusions, respectively, beneath the high dose diffusions.
7. The protective circuit for a target circuit of claim 1 wherein all of the high dose n-type and p-type diffusions have an n-type and a p-type low dose diffusions, respectively, beneath the high dose diffusions.
8. The protective circuit for a target circuit of claim 1 wherein the protective circuit for a target circuit includes an n-type high dose buried layer beneath the entire circuit for protecting the target circuit.
9. A method for protecting a target circuit against an ESD event, the method comprising the steps of:
connecting an anode of a protective circuit to a contact on the target circuit;
connected a cathode of the protective circuit to a reference contact on the circuit;
wherein when the protective circuit triggers due to the ESD event, the voltage between the contact and the reference contact on the target circuit is limited, thereby protecting the target circuit;
connecting an emitter of a first PNP transistor to the anode;
connecting a collector to the base of a first NPN transistor;
connecting a base to the collector of the first NPN transistor;
connecting a first resistor between the anode to the base of the first PNP transistor;
connecting the emitter of the first NPN transistor to the emitter and the base of a second PNP transistor and to the collector of a second NPN transistor;
connecting a the collector of the second PNP transistor to the base of the second NPN transistor;
connecting the emitter of the second NPN transistor to the cathode;
connecting a second resistor between the base of the second NPN transistor and the cathode; and
connecting a third resistor between the collector of the first NPN transistor and the collector of the second NPN transistor.
10. An ESD protection device comprising:
the protective device having an anode (A) and a cathode (K), the anode (A) connected to a contact on the target circuit;
the cathode (K) connected to a reference contact on the circuit, wherein, when the protective device triggers due to the ESD event, the voltage between the contact and the reference contact on the target circuit is limited, thereby protecting the target circuit;
a first n type well ( 4 ), the first n type well ( 4 ) comprising:
a first low dose N regions ( 3 A) formed in the n type well ( 4 ), a high dose n+ region ( 3 ) formed in the low dose n− region ( 3 A); and a low dose p− region ( 2 A) formed in the n type well 4 , and a high dose p+ region ( 2 ) formed in the low dose p− regions ( 2 A);
a connection ( 22 ) from the high dose n+ regions ( 3 ) to the high dose p+ region ( 2 ) connected to the anode (A);
a first p type well ( 6 ) adjacent to the first n type well ( 4 ), the first p type well 6 comprising a second low dose n− region formed in the first p type well ( 6 ), and a high dose n+ region ( 8 );
a second n type well adjacent to the first p type well ( 6 ), the second n type well comprising:
a low dose p− regions formed in the second n type well and a high dose p+ region ( 10 ) formed in the low dose p− region; and a low dose n− regions formed in the second n type well and a high dose n+ regions ( 24 ) formed in the second n type well;
a conductive connection ( 24 ) from the high dose n+region ( 24 ) to the high dose p− region ( 10 ); and a additional conductive connection from the conductive connection ( 24 ) to the high dose n+region ( 8 );
a second p type well adjacent to the second n type well, the second p type well comprising:
a low dose p− regions ( 12 ) formed in the second p type well, and a high dose p+region formed in the low dose p− region ( 12 );
a low dose n− region formed in the second p type well ( 12 ), and a high dose n+ region ( 14 ) formed in the low dose n− region;
a conductive connection ( 26 ) from the high dose n+ region ( 14 ) to the high dose p+ region formed in the low dose p− region ( 12 ), and to the cathode (K);
a high dose N+ buried layer formed beneath the fist n type well ( 4 ), the second n type well, the first p type well ( 6 ) and the second p type well; wherein the high dose N+ buried layer is formed above a P type substrate; and wherein the anode (A) connects through the high dose n+ region ( 3 ), the low dose n− region ( 3 A), the first n type well ( 4 ), the high dose N+ buried layer (R 3 ), the second n type well to the low dose p− region in the second n type well, wherein a signal at the anode (A) is connected to the junction of the low dose p− region in the second n type well.