Apparatus comprising an avalanche photodiode
View Patent ↗Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.
1. A photodiode comprising a semiconductor layer for providing avalanche multiplication of electrical carriers wherein the semiconductor layer comprises:
(1) an active region having a substantially uniform breakdown voltage, V ba , and wherein the active region is doped with a first dopant to a first diffusion radius, R da , and wherein the active region is doped to a first junction depth that is substantially uniform; and
(2) an edge region having an edge-region width, wherein the edge region is doped with a second dopant to a second diffusion radius, R de , and wherein the edge region is doped to a second junction depth that has a second average junction depth, and wherein the edge-region width is within the range of approximately R de to approximately R de +2R da , and further wherein the edge region has a breakdown voltage, V be , that is greater than or equal to 0.9V ba ;
wherein the active region and the edge region are contiguous, and wherein the first junction depth is greater than the second average junction depth.
2. The photodiode of claim 1 wherein the active region and the edge region have substantially the same doping level.
3. The photodiode of claim 1 wherein the edge-region width is substantially equal to R da +R de .
4. The photodiode of claim 1 wherein V be is greater than or equal to 0.99V ba .
5. The photodiode of claim 1 wherein the active region has an active-region width and the active-region width is less than or substantially equal to 1.25 times the mode-field diameter of an optical beam.
6. The photodiode of claim 1 wherein the active-region width is substantially equal to the mode-field diameter of the optical beam.
7. The photodiode of claim 1 wherein the first dopant and the second dopant are the same dopant.
8. The photodiode of claim 1 wherein the semiconductor has a thickness, T c , and wherein the first junction depth is within the range of approximately 0.5T c to 0.98T c .
9. The photodiode of claim 8 wherein the first junction depth is within the range of 0.75T c to 0.9T c .
10. The photodiode of claim 9 wherein the first junction depth is approximately 0.8T c .
11. A single-photon avalanche photodiode comprising a semiconductor layer for providing avalanche multiplication of electrical carriers wherein the semiconductor layer comprises:
(1) an active region having a substantially uniform breakdown voltage, V ba , wherein the active region is doped with a first dopant to a first diffusion radius, R da , and a second dopant to a second diffusion radius, R de ; and
(2) an edge region having a breakdown voltage, V be , that is greater than or equal to 0.9V ba , wherein a portion of the edge region is doped with the second dopant to a second diffusion radius, R de , and wherein the edge region has an edge-region width that is within the range of approximately R de to approximately R de +2R da ;
wherein the active region and the edge region are contiguous, and wherein the active region and the edge region have substantially the same doping level.
12. The photodiode of claim 11 wherein the semiconductor layer has a thickness, T c , and wherein the active region is characterized by a first junction depth that is substantially uniform and is within the range of approximately 0.5T c to approximately 0.98T c , and wherein the edge region is characterized by a second junction depth that is non-uniform, and further wherein the second junction depth has an average junction depth that is less than the first junction depth.
13. The photodiode of claim 11 wherein the semiconductor layer has a thickness, T c , and wherein the edge-region width is within the range of approximately 0.25T c to approximately 2T c .
14. The photodiode of claim 13 wherein the edge-region width is in the range of substantially 0.5T c to substantially T c .
15. The photodiode of claim 11 wherein the semiconductor layer has a thickness, T c , and wherein the active region has an active-region width that is in the range of substantially 0.25T c to substantially 2T c .
16. The photodiode of claim 15 wherein the active region width is in the range of substantially 0.5T c to substantially T c .
17. The photodiode of claim 15 wherein the active-region width is substantially equal to 0.8T c .
18. A single-photon avalanche photodiode comprising a semiconductor layer for providing avalanche multiplication of electrical carriers wherein the semiconductor layer comprises a device region that is formed by operations comprising:
doping the device region with a first dopant to a first diffusion radius, R de , wherein the device region comprises an active region that is surrounded by an edge region; and
doping the active region with a second dopant to a second diffusion radius, R da ;
wherein the active region has a substantially uniform breakdown voltage, V ba ;
wherein the edge region has a breakdown voltage, V be , that is greater than or equal to 0.99V ba ;
wherein the edge region has an edge-region width that is within the range of approximately R de to approximately R de +2R da ; and
wherein the active region and the edge region are contiguous.
19. The photodiode of claim 18 wherein the active region and the edge region have substantially the same doping level.
20. The photodiode of claim 18 wherein the semiconductor layer has a thickness, T c , and wherein the active region is characterized by a first junction depth that is substantially uniform and is within the range of 0.5Tc to approximately 0.98Tc, and wherein the edge region is characterized by a second junction depth that is non-uniform and has an average junction depth that is less than the first junction depth.