Laser liftoff structure and related methods
Light-emitting devices, and related components, systems, and methods associated therewith are provided.
1. A method of making a light emitting device, the method comprising:
providing a first multi-layer stack, comprising
a substrate
a submount,
a wide bandgap buffer region between the substrate and the submount, wherein the buffer region includes a dislocation reduction region comprising a superlattice semiconductor structure; and
a sacrificial portion between the buffer region and the submount; and
exposing the sacrificial portion to electromagnetic radiation to at least partially decompose the sacrificial portion; and
removing the substrate and at least part of the buffer region from the first multi-layer stack to form a second multi-layer stack,
wherein the substrate and the buffer region are transparent to wavelengths of the electromagnetic radiation.
2. The method of claim 1 , wherein the dislocation reduction region has a varying composition across a thickness of the region.
3. The method of claim 1 , wherein the composition of at least one of the elements in the dislocation reduction region is graded across a thickness of the region.
4. The method of claim 1 , wherein the superlattice semiconductor structure comprises an Al x Ga 1-x N/Al y Ga 1-y N superlattice.
5. The method of claim 1 , wherein the electromagnetic radiation has a wavelength of smaller than 250 nm.
6. The method of claim 1 , wherein the buffer region further comprises an AlN layer.
7. The method of claim 1 , wherein the second multi-layer stack comprises the n-doped region at an upper surface of the second multi-layer stack.
8. The method of claim 1 , wherein the multilayer stack comprises a light generating region.
9. The method of claim 1 , wherein the sacrificial portion comprises a semiconductor material.
10. The method of claim 1 , wherein the decomposing the sacrificial portion comprises forming a gas and a liquid.
11. The method of claim 1 , wherein the substrate is formed of AlN.
12. The method of claim 1 , wherein the first multi-layer stack includes an n-doped region formed directly on the buffer region.
13. The method of claim 12 , wherein the n-doped region comprises the sacrificial portion.
14. The method of claim 12 , wherein the n-doped region is less than 1000 nm.
15. The method of claim 12 , wherein the n-doped region is less than 500 nm.
16. A method of making a light emitting device, the method comprising:
providing a first multi-layer stack, comprising:
a substrate;
a submount;
a wide bandgap buffer region between the substrate and the submount, wherein the buffer region includes a dislocation reduction region, the dislocation reduction region has a varying composition across a thickness of the region, and the composition of at least one of the elements in the dislocation reduction region is graded across a thickness of the region; and
a sacrificial portion between the buffer region and the submount; and
exposing the sacrificial portion to electromagnetic radiation to at least partially decompose the sacrificial portion; and
removing the substrate and at least part of the buffer region from the first multi-layer stack to form a second multi-layer stack,
wherein the substrate and the buffer region are transparent to wavelengths of the electromagnetic radiation; and
wherein the first multi-layer stack includes an n-doped region formed directly on the buffer region.
17. The method of claim 16 , wherein the n-doped region comprises the sacrificial portion.
18. The method of claim 16 , wherein the n-doped region is less than 1000 nm.
19. The method of claim 16 , wherein the n-doped region is less than 500 nm.
20. The method of claim 16 , wherein the electromagnetic radiation has a wavelength of smaller than 250 nm.
21. The method of claim 16 , wherein the buffer region further comprises an AlN layer.
22. The method of claim 16 , wherein the second multi-layer stack comprises the n-doped region at an upper surface of the second multi-layer stack.
23. The method of claim 16 , wherein the multilayer stack comprises a light generating region.
24. The method of claim 16 , wherein the sacrificial portion comprises a semiconductor material.
25. The method of claim 16 , wherein the decomposing the sacrificial portion comprises forming a gas and a liquid.
26. The method of claim 16 , wherein the substrate is formed of AlN.