Current-perpendicular-to-plane (CPP) read sensor with multiple ferromagnetic sense layers
View Patent ↗The invention provides a current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with multiple ferromagnetic sense layers. In one embodiment of the invention, a CPP TMR read sensor comprises a first sense layer formed by a ferromagnetic polycrystalline Co—Fe film, a second sense layer formed by a ferromagnetic interstitial-type amorphous Co—Fe—B film, a third sense layer formed by a ferromagnetic substitute-type amorphous Co—Fe—X film where X is Hf, Zr or Y, and a fourth sense layer formed by a ferromagnetic Ni—Fe film. The third sense layer acts as a diffusion barrier layer to suppress Ni diffusion, thus allowing the incorporation of the Ni—Fe fourth sense layer for improving ferromagnetic properties of the multiple sense layers. The multiple sense layers induce spin-dependent scattering, thus facilitating the CPP TMR read sensor to exhibit a strong TMR effect.
1. A current-perpendicular-to-plane (CPP) read sensor comprising
nonmagnetic seed layers;
an antiferromagnetic pinning layer on the nonmagnetic seed layers;
a ferromagnetic keeper layer on the antiferromaunetic pinning layer;
a nonmagnetic antiparallel-coupling layer on the ferromagnetic keeper layer;
a ferromagnetic reference layer on the nonmagnetic antiparallel-coupling layer;
a nonmagnetic barrier or spacer layer on the ferromagnetic reference layer;
multiple ferromagnetic sense layers formed of polycrystalline and amorphous films on the nonmagnetic barrier or spacer layer; and
a cap layer on the multiple ferromagnetic sense layers;
wherein the multiple ferromagnetic sense layers further comprise:
a first sense layer formed by a ferromagnetic polycrystalline film;
a second sense layer formed by a ferromagnetic interstitial-type amorphous film on the first sense layer;
a third sense layer formed by a ferromagnetic substitute-type amorphous film on the second sense layer; and
a fourth sense layer formed by another ferromagnetic polycrystalline film on the third sense layer.
2. A CPP read sensor as in claim 1 , wherein the first sense layer is formed by a Co—Fe film containing Co with a content ranging from 50 to 90 at % and Fe with a content ranging from 10 to 50 at %, and having a thickness not greater than 0.8 nm.
3. A CPP read sensor as in claim 1 , wherein the second sense layer is formed by a Co—Fe—B film containing Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, and B with a content ranging from 4 to 30 at %, and having a thickness ranging from 1 to 4 nm.
4. A CPP read sensor as in claim 1 , wherein the third sense layer is formed by a Co—Fe—X film (where X is Hf, Zr or Y) containing Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, and X with a content ranging from 4 to 30 at %, and having a thickness ranging from 0.6 to 2 nm.
5. A CPP read sensor as in claim 1 , wherein the fourth sense layer is formed by a Ni—Fe film containing Ni with a content ranging from 80 to 100 at % and Fe with a content ranging from 0 to 20 at %, and having a thickness ranging from 1 to 8 nm.
6. A CPP read sensor as in claim 1 wherein the nonmagnetic layer formed on the ferromagnetic reference layer is a barrier layer formed by a nonmagnetic electrically insulating oxygen-doped Mg (Mg—O)or Mg oxide (MgO X ) film with a thickness ranging from 0.4 to 2 nm for detecting resistance changes through a tunneling magnetoresistance effect.
7. A CPP read sensor as in claim 1 wherein the nonmagnetic layer formed on the ferromagnetic reference layer is a spacer layer formed by a nonmagnetic electrically conducting Cu or oxygen-doped Cu (Cu—O) film with a thickness ranging from 1.6 to 4 nm for detecting resistance changes through a giant magnetoresistance effect.
8. A CPP read sensor as in claim 1 , wherein:
the first sense layer is formed by a Co—Fe film containing Co with a content ranging from 50 to 90 at % and Fe with a content ranging from 10 to 50 at %, and having a thickness not greater than 0.8 nm;
the second sense layer is formed by a Co—Fe—B film containing Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, and B with a content ranging from 4 to 30 at %, and having a thickness ranging from 1 to 4 nm;
the third sense layer is formed by a Co—Fe—X film (where X is Hf, Zr or Y) containing Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, and X with a content ranging from 6 to 30 at %, and having a thickness ranging from 0.6 to 2 nm; and
the fourth sense layer is formed by a Ni—Fe film containing Ni with a content ranging from 80 to 100 at % and Fe with a content ranging from 0 to 20 at %, and having a thickness ranging from 1 to 8 nm.
9. A hard disk drive including
a hard disk; and
a read head that includes a current-perpendicular-to-plane (CPP) read sensor for reading data from the hard disk, the CPP read sensor comprising nonmagnetic seed layers;
an antiferromagnetic pinning layer on the nonmagnetic seed layers;
a ferromagnetic keeper layer on the antiferromaunetic pinning layer;
a nonmagneric antiparallel-coupling layer on the ferromagnetic keeper layer;
a ferromagnetic reference layer on the nonmagneric antiparallel-coupling layer;
a nonmagnetic barrier or spacer layer on the ferromagnetic reference layer;
multiple ferromagnetic sense layers formed of polycrystalline and amorphous films on the nonmagnetic barrier or spacer layer; and
a nonmagnetic cap layer on the multiple ferromagnetic sense layers;
wherein the multiple ferromagnetic sense layers further comprise:
a first sense layer formed by a ferromagnetic polycrystalline film;
a second sense layer formed by a ferromagnetic interstitial-type amorphous film on the first sense layer;
a third sense layer formed by a ferromagnetic substitute-type amorphous film on the second sense layer; and
a fourth sense layer formed by another ferromagnetic polycrystalline film on the third sense layer.
10. The hard disk drive of claim 9 , wherein the first sense layer is formed by a Co—Fe film containing Co with a content ranging from 50 to 90 at % and Fe with a content ranging from 10 to 50 at %, and having a thickness not greater than 0.8 nm.
11. The hard disk drive of claim 9 wherein the second sense layer is formed by a Co—Fe—B film containing Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, and B with a content ranging from 4 to 30 at %, and having a thickness ranging from 1 to 4 nm.
12. The hard disk drive of claim 9 , wherein the third sense layer is formed by a Co—Fe—X film (where X is Hf, Zr or Y) containing Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, and X with a content ranging from 6 to 30 at %, and having a thickness ranging from 0.6 to 2 nm.
13. The hard disk drive of claim 9 , wherein the fourth sense layer is formed by a Ni—Fe film containing Ni with a content ranging from 80 to 100 at % and Fe with a content ranging from 0 to 20 at %, and having a thickness ranging from 1 to 8 nm.
14. The hard disk drive of claim 9 , wherein the nonmagnetic layer formed on the ferromagnetic reference layer is a barrier layer formed of a nonmagnetic electrically insulating oxygen-doped Mg (Mg—O)or Mg oxide (MgO X ) film with a thickness ranging from 0.4 to 2 nm for detecting resistance changes through a tunneling magnetoresistance effect.
15. The hard disk drive of claim 9 , wherein the nonmagnetic layer formed on the ferromagnetic reference layer is a spacer layer formed of a nonmagnetic electrically conducting Cu or oxygen-doped Cu (Cu—O) film with a thickness ranging from 1.6 to 4 nm for detecting resistance changes through a giant magnetoresistance effect.
16. A hard disk drive as in claim 9 , wherein:
the first sense layer is formed by a Co—Fe film containing Co with a content ranging from 50 to 90 at % and Fe with a content ranging from 10 to 50 at %, and having a thickness not greater than 0.8 nm;
the second sense layer is formed by a Co—Fe—B film containing Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, and B with a content ranging from 4 to 30 at %, and having a thickness ranging from 1 to 4 nm;
the third sense layer is formed by a Co—Fe—X film (where X is Hf, Zr or Y) containing Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, and X with a content ranging from 6 to 30 at %, and having a thickness ranging from 0.6 to 2 nm; and
the fourth sense layer is formed by a Ni—Fe film containing Ni with a content ranging from 80 to 100 at % and Fe with a content ranging from 0 to 20 at %, and having a thickness ranging from 1 to 8 nm.