Method for manufacturing semiconductor device, semiconductor device, semiconductor circuit, electro-optical device, and electronic apparatus

1. A method for manufacturing a semiconductor device, comprising:

forming a source electrode and a drain electrode on a substrate;

forming an organic semiconductor layer including a π conjugated organic compound at least between the source electrode and the drain electrode;

applying an application liquid on the organic semiconductor layer, the application liquid being made of a polymer of an alicyclic compound dissolved in a paraffin hydrocarbon solvent that is a carbocyclic compound without having aromaticity;

forming a gate insulation layer including the polymer of the alicyclic compound by removing the paraffin hydrocarbon solvent from the application liquid; and

forming a gate electrode on the gate insulation layer,

wherein the alicyclic compound is one compound selected from the group consisting of:

wherein R 1 and R 2 , respectively, indicate a hydrogen atom and an alkyl group having a carbon number of from 1 to 20, and m+n is in the range 10 to 100,000, and m can be zero.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein the paraffin hydrocarbon solvent is in a liquid state at a normal temperature and a normal pressure condition.

3. The method for manufacturing a semiconductor device according to claim 1 , wherein the paraffin hydrocarbon solvent is removed from the application liquid so as to remain at 0.1 wt % or less with respect to the polymer of the alicyclic compound.

4. The method for manufacturing a semiconductor device according to claim 1 , wherein the gate electrode is made of silver.

5. The method for manufacturing a semiconductor device according to claim 1 , wherein the paraffin hydrocarbon solvent is made of at least one of heptane, octane, nonane, decane, undecane, dodecane, tridecane, tetradecane, pentadecane, hexadecane, and heptadecane.