OPTIMIZATION OF NEW POLYMER SEMICONDUCTORS FOR BETTER MOBILITY AND PROCESSIBALITY
In accordance with the invention, there are polymers (II) having the formula: wherein R and R′ are substituents comprising about 8 to about 16 carbon atoms and n represents the number of repeat unit from about 5 to about 5000; and electronic devices, such as, for example, thin film transistors including the polymer (II).
1 . A polymer having the formula:
wherein R and R′ are substituents comprising about 8 to about 16 carbon atoms; and
n represents the number of repeat unit from about 5 to about 5000.
2 . The polymer of claim 1 , wherein R and R′ comprises at least one of linear alkyl group, linear alkyl group comprising one or more hetero atoms, and linear fluorinated alkyl group.
3 . The polymer of claim 1 , wherein the R and R′ groups are selected from the group consisting of octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, and hexadecyl.
4 . A method of forming the polymer of claim 1 , wherein the polymer is prepared by oxidative coupling polymerization of a monomer (I) in the presence of an oxidizing agent in a solvent:
wherein R and R′ are substituents comprising about 8 to about 16 carbon atoms.
5 . The method of claim 4 , wherein the oxidizing agent is selected from the group consisting of FeCl 3 , FeBr 3 , Fe 2 (SO 4 ) 3 , Na 2 S 2 O 8 , K 2 S 2 O 8 , K 2 Cr 2 O 7 , KMnO 4 , KClO 3 , MoCl 3 , and the mixture thereof.
6 . The method of claim 4 , wherein the solvent is selected from the group consisting of hydrocarbon solvents and halogenated hydrocarbon solvents.
7 . The method of claim 6 , wherein the halogenated hydrocarbon solvent is selected from the group consisting of dichloromethane, chloroform, trichloroethane, tetrachloroethane, chlorobenzene, dichlorobenzene, trichlorobenzene, and the mixture thereof.
8 . The method of claim 4 , wherein the oxidative coupling polymerization is carried out at a temperature in the range of about −40° C. to about 80° C. for a time in the range of about 15 minutes to about 48 hours.
9 . A method of forming the polymer of claim 1 , wherein the polymer is prepared by zinc-mediated coupling polymerization of a symmetrical monomer (III) having the formula:
wherein X is a halogen selected from the group consisting of Br, Cl, and I; and
R and R′ are substituents comprising about 8 to about 16 carbon atoms.
10 . A method of forming the polymer of claim 1 , wherein the polymer is prepared by Stille coupling polymerization of compound (IV) with compound (V):
wherein X is a halogen selected from the group consisting of Br, Cl, and I;
R and R′ are substituents comprising about 8 to about 16 carbon atoms; and
R″ is an alkyl group selected from the group consisting of methyl, ethyl, propyl, and butyl.
11 . A method of forming the polymer of claim 1 , wherein the polymer is prepared by Suzuki coupling polymerization of compound (IV) with compound (VI):
wherein X is a halogen selected from the group consisting of Br, Cl, and I;
Y selected from the group consisting of HO—, CH 3 O—, C 2 H 5 O—, C 3 H 7 O—, C 4 H 9 O—, —OCH 2 CH 2 O—, OCH 2 CH 2 CH 2 O—, and —OC(CH 3 ) 2 C(CH 3 ) 2 O—; and
R and R′ are substituents comprising about 8 to about 16 carbon atoms.
12 . An electronic device comprising a polymer (II) having the formula:
wherein R and R′ are substituents comprising about 8 to about 16 carbon atoms; and
n represents the number of repeat unit from about 5 to about 5000.
13 . The electronic device of claim 12 , wherein R and R′ comprises at least one of linear alkyl group, linear alkyl group comprising one or more hetero atoms, and linear fluorinated alkyl group.
14 . The electronic device of claim 12 , wherein the R and R′ groups are selected from the group consisting of octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, and hexadecyl.
15 . The electronic device of claim 12 , wherein the polymer (II) is deposited using a liquid deposition technique comprising a liquid coating process.
16 . The electronic device of claim 12 , wherein the polymer (II) is deposited using a liquid deposition technique comprising a printing technique.
17 . A thin film transistor comprising:
a substrate;
a dielectric layer disposed over the substrate;
a source electrode and a drain electrode disposed over the substrate; and
a semiconductor layer disposed over the substrate, the semiconductor layer comprising a polymer (II) having the formula:
wherein R and R′ are substituents comprising about 8 to about 16 carbon atoms; and
n represents the number of repeating groups of from about 5 to about 5000.
18 . The thin film transistor of claim 17 , wherein R and R′ comprises at least one of linear alkyl group, linear alkyl group comprising one or more hetero atoms, and linear fluorinated alkyl group.
19 . The thin film transistor of claim 17 , wherein the R and R′ groups are selected from the group consisting of octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, and hexadecyl.
20 . The thin film transistor of claim 17 , wherein the polymer (II) is prepared by oxidative coupling polymerization of a monomer (I) in the presence of an oxidizing agent in a solvent:
wherein R and R′ are substituents comprising about 8 to about 16 carbon atoms.
21 . The thin film transistor of claim 20 , wherein the oxidizing agent is selected from a group consisting of FeCl 3 , FeBr 3 , Fe 2 (SO 4 ) 3 , Na 2 S 2 O 8 , K 2 S 2 O 8 , K 2 Cr 2 O 7 , KMnO 4 , KClO 3 , MoCl 3 , and the mixture thereof.
22 . The thin film transistor of claim 17 , wherein the polymer (II) is deposited using a liquid deposition technique comprising a liquid coating process.
23 . The electronic device of claim 17 , wherein the polymer (II) is deposited using a liquid deposition technique comprising a printing technique.
24 . The thin film transistor of claim 17 having a mobility greater than about 0.2 cm 2 V −1 s −1 without thermal annealing.