Capacitor structure

1. A capacitor structure formed on a semiconductor substrate, comprising:

a first electrode line formed in a first wiring layer and having a first electrode base and a first extension extending from the first electrode base;

a second electrode line formed in the first wiring layer and having a second electrode base and a second extension extending from the second electrode base;

a third electrode line formed in a second wiring layer different from the first wiring layer;

a first electrode having a plurality of teeth protruding in a comb shape from the first electrode base of the first electrode line; and

a second electrode having a plurality of teeth protruding in a comb shape from the second electrode base of the second electrode line,

wherein the first and second electrodes face each other with their teeth interdigitated with each other via a dielectric,

all of the plurality of teeth of the first electrode protrude from the first electrode base, and all of the plurality of teeth of the second electrode protrude from the second electrode base,

at least one of the plurality of teeth of the first electrode is electrically connected to the third electrode line, and

the third electrode line extends across at least one of the plurality of teeth of the second electrode in a plan view.

2. The capacitor structure of claim 1 , wherein the third electrode line comprises a third electrode base and a third electrode having a plurality of teeth protruding in a comb shape from the third electrode base of the third electrode line,

wherein at least one of the teeth of the second electrode faces a corresponding one of the teeth of the third electrode.

3. The capacitor structure of claim 1 , wherein vias are formed on top or bottom of the teeth of the first and second electrodes.

4. The capacitor structure of claim 2 , wherein:

the capacitor structure further comprises a fourth electrode line formed in the second wiring layer having a fourth electrode base, and

a fourth electrode having a plurality of teeth protruding in a comb shape from the fourth electrode base of the fourth electrode line, wherein:

the third and fourth electrodes face each other with their teeth interdigitated with each other via a dielectric,

at least one of the teeth of the first electrode is connected with a corresponding one of the teeth of the third electrode via a via, and

at least one of the teeth of the second electrode is connected with a corresponding one of the teeth of the fourth electrode via a via.

5. The capacitor structure of claim 1 , wherein the line width of at least one of the teeth of the first electrode is different from the other teeth of the first electrode.

6. The capacitor structure of claim 5 , wherein the line width of each of the teeth of the first electrode increases as a distance between the first extension and each of connecting point at which each of the teeth of the first electrode connect to the first electrode base increases.

7. A capacitor structure formed on a semiconductor substrate, comprising:

a first electrode formed in a first wiring layer and having a first extension and a first spiral portion extending from the first extension;

a second electrode formed in the first wiring layer and having a second extension and a second spiral portion extending from the second extension;

a third electrode line formed in a second wiring layer different from the first wiring layer,

wherein the first and second spiral portions face each other and are intertwined with each other via a dielectric, and

the first spiral portion of the first electrode is electrically connected with the third electrode line so as to form a route of a current flow between the first extension and the third electrode line, and

the third electrode line extends across at least one of a part of the first spiral portion of the first electrode and a part of the second spiral portion of the second electrode in a plan view.

8. The capacitor structure of claim 7 , wherein the third electrode line comprises a third electrode base and a third electrode having a plurality of protrusions protruding from the third electrode base of the third electrode line,

wherein at least part of the second spiral portion of the second electrode faces corresponding part of the protrusions of the third electrode.

9. The capacitor structure of claim 7 , wherein vias are formed on top or bottom of the first and second spiral portions of the first and second electrodes.

10. The capacitor structure of claim 7 , wherein;

the capacitor structure further comprises a fourth electrode line formed in the second wiring layer having a fourth electrode base,

the third electrode line comprises a third electrode base,

the second spiral portion of the second electrode is electrically connected with the fourth electrode line,

the capacitor structure further comprises:

a third electrode having a plurality of protrusions protruding from the third electrode base of the third electrode line; and

a fourth electrode having a plurality of protrusions protruding from the fourth electrode base of the fourth electrode line,

the third and fourth electrodes face each other with their protrusions interdigitated with each other via a dielectric,

the first spiral portion of the first electrode is connected with the protrusions of the third electrode via at least one via disposed on the first spiral portion, and

the second spiral portion of the second electrode is connected with the protrusions of the fourth electrode via at least one via disposed on the second spiral portion.

11. The capacitor structure of claim 1 , wherein a via is disposed at a tip portion of the at least one of the teeth of the first electrode to electrically connect with the third electrode line.

12. The capacitor structure of claim 7 , wherein a via is disposed at a tip portion of the first spiral portion of the first electrode to electrically connect with the third electrode line.

13. The capacitor structure of claim 1 , wherein only one via is disposed at the at least one of the plurality of teeth of the first electrode to electrically connect with the third electrode line.

14. The capacitor structure of claim 7 , wherein only one via is disposed at the first spiral portion of the first electrode.

15. The capacitor structure of claim 1 , wherein the first electrode base and the first extension have no via to electrically connect with the third electrode line.

16. The capacitor structure of claim 10 , wherein:

the first spiral portion of the first electrode is connected with the protrusions of the third electrode via a plurality of vias disposed on the first spiral portion, and

the second spiral portion of the second electrode is connected with the protrusions of the fourth electrode via a plurality of vias disposed on the second spiral portion.

17. The capacitor structure of claim 1 , wherein the first extension extends in a direction perpendicular to the plurality of teeth of the first electrode.

18. The capacitor structure of claim 6 , wherein the first extension extends in a direction parallel to the plurality of teeth of the first electrode and opposite to a direction in which the plurality of teeth of the first electrode extend.

19. The capacitor structure of claim 1 further comprising:

a fourth electrode line formed in the second wiring layer, wherein:

at least one of the plurality of the teeth of the second electrode is electrically connected to the fourth electrode line, and

the fourth electrode line extends across at least one of the plurality of teeth of the first electrode in a plan view.

20. The capacitor structure of claim 1 , wherein

the third electrode line is disposed between the first electrode base and the second electrode base in a plan view.

21. The capacitor structure of claim 4 , wherein:

the third electrode line is disposed between the second electrode base and the fourth electrode line in a plan view, and

the fourth electrode line is disposed between the first electrode base and the third electrode line in a plan view.

22. A capacitor structure formed on a semiconductor substrate, comprising:

a first electrode formed in a first wiring layer and having a first electrode base and a plurality of first teeth protruding in a comb shape from the first electrode base;

a second electrode formed in the first wiring layer and having a second electrode base and a plurality of second teeth protruding in a comb shape from the second electrode base;

a third electrode formed in a second wiring layer different from the first wiring layer, wherein the first and second teeth face each other by being interdigitated with each other via a dielectric,

at least one of the plurality of first teeth of the first electrode is electrically connected to the third electrode, and

the third electrode extends across at least one of the plurality of second teeth of the second electrode in a plan view.

23. The capacitor structure of claim 1 , wherein:

the capacitor structure further comprises a fourth electrode line formed in the second wiring layer, and

the fourth electrode line extends across at least one of the plurality of teeth of the first electrode in a plan view.

24. The capacitor structure of claim 7 , wherein:

the capacitor structure further comprises a fourth electrode line formed in the second wiring layer, and

the fourth electrode line extends across at least a part of the first spiral portion of the first electrode and a part of the second spiral portion of the second electrode in a plan view.