IP Library Patent Application 12058231
Patent Application
App. No. 12/058,231

PIEZOELECTRIC OSCILLATOR

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Quick Facts
Patent No.
US None
App. No.
12/058,231
Abstract

For a piezoelectric oscillator according to the present invention, an oscillator circuit includes: a piezoelectric vibrator; an NMOS transistor and a PMOS transistor that constitute an amplifier connected in parallel to the piezoelectric vibrator; and load capacitors connected in parallel to the piezoelectric vibrator. The gate terminals of the NMOS transistor and the PMOS transistor, which are constituents of the amplifier, are connected by a DC cut capacitor, and the gate terminal of the NMOS transistor and the output terminal of the amplifier are connected by a feedback resistor. An arbitrary bias voltage, to be applied to the gate terminal of the PMOS transistor via a high-frequency elimination resistor, is generated by a circuit provided by a diode-connected, second PMOS transistor.

Claims (64)

1 . A piezoelectric oscillator, comprising:

an amplifier connected in parallel to a piezoelectric vibrator; and

an load capacitor connected in parallel to the piezoelectric vibrator,

wherein the amplifier includes:

an inverter comprised of a first PMOS transistor and an NMOS transistor that are connected in series;

a DC cut capacitor connected between a gate terminal of the first PMOS transistor and a gate terminal of the NMOS transistor; and

a feedback resistor connected between the gate terminal of the NMOS transistor and an output terminal of the amplifier; and

wherein a bias voltage that is smaller than half of a source voltage of the inverter is to be applied to the gate terminal of the first PMOS transistor.

2 . The piezoelectric oscillator according to claim 1 , further comprising:

a high-frequency elimination resistor connected to the gate terminal of the first PMOS transistor,

wherein the bias voltage is to be applied via the high-frequency elimination resistor.

3 . The piezoelectric oscillator according to claim 1 , further comprising:

a bias voltage generator circuit generating the bias voltage,

wherein the bias voltage generator circuit includes:

a second PMOS transistor that is diode-connected, and

a current source connected in series to the second PMOS transistor.

4 . The piezoelectric oscillator according to claim 3 , wherein:

the source voltage of the first PMOS transistor is equal to a source voltage of the second PMOS transistor;

a gate-source voltage of the first PMOS transistor is equal to a gate-source voltage of the second PMOS transistor:

a gate width of the first PMOS transistor is larger than a gate width of the second PMOS transistor; and

a gate length of the first PMOS transistor is smaller than a gate width of the second PMOS transistor.

5 . The piezoelectric oscillator according to claim 4 , wherein a current value of the current source is set so that the bias voltage becomes smaller than half of the source voltage of the inverter.

6 . The piezoelectric oscillator according to claim 1 , further comprising:

a bias voltage generator circuit for generating the bias voltage,

wherein the bias voltage generator circuit includes

a second PMOS transistor that is diode-connected, and

a load resistor connected in series to the second PMOS transistor.

7 . A piezoelectric oscillator comprising:

an amplifier connected in parallel to a piezoelectric vibrator; and

a load capacitor connected in parallel to the piezoelectric vibrator,

wherein the amplifier includes:

an inverter that is comprised of a PMOS transistor and an NPN transistor connected in series,

a DC cut capacitor connected between a gate terminal of the PMOS transistor and a base terminal of the NPN transistor, and

a feedback resistor connected between the base terminal of the NPN transistor and an output terminal of the amplifier, and

wherein a bias voltage that is smaller than half of a source voltage of the inverter is to be applied to the gate terminal of the PMOS transistor.

8 . A piezoelectric oscillator, comprising:

an amplifier connected in parallel to a piezoelectric vibrator; and

an load capacitor connected in parallel to the piezoelectric vibrator,

wherein the amplifier includes:

an inverter that is comprised of a first NMOS transistor and an PMOS transistor that are connected in series,

a DC cut capacitor connected between a gate terminal of the first NMOS transistor and a gate terminal of the PMOS transistor and

a feedback resistor connected between the gate terminal of the PMOS transistor and an output terminal of the amplifier, and

wherein a bias voltage that is larger than half of a source voltage of the inverter is to be applied to the gate terminal of the first NMOS transistor.

9 . The piezoelectric oscillator according to claim 8 , further comprising:

a high-frequency elimination resistor connected to the gate terminal of the first NMOS transistor,

wherein the bias voltage is to be applied via the high-frequency elimination resistor.

10 . The piezoelectric oscillator according to claim 8 , further comprising:

a bias voltage generator circuit generating the bias voltage,

wherein the bias voltage generator circuit includes:

a second NMOS transistor that is diode-connected, and

a current source connected in series to the second NMOS transistor.

11 . The piezoelectric oscillator according to claim 8 , further comprising:

a bias voltage generator circuit generating the bias voltage,

wherein the bias voltage generator circuit includes:

a second NMOS transistor that is diode-connected, and

a load resistor connected in series to the second NMOS transistor.

12 . A piezoelectric oscillator, comprising:

an amplifier connected in parallel to a piezoelectric vibrator; and

an load capacitor connected in parallel to the piezoelectric vibrator,

wherein the amplifier includes:

an inverter that is comprised of a NMOS transistor and an PNP transistor that are connected in series,

a DC cut capacitor connected between a gate terminal of the NMOS transistor and a base terminal of the PNP transistor and

a feedback resistor connected between the base terminal of the PNP transistor and an output terminal of the amplifier, and

wherein a predetermined bias voltage is to be applied to the gate terminal of the NMOS transistor.

Assignments (2)
CHANGE OF NAME Recorded Nov 20, 2008
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 021897/0516 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 16, 2008
From: OTSUKA, TAKASHI; TAKEUCHI, HISATO
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 021100/0563 →