Light emitting device and manufacturing method
View Patent ↗A light emitting device of the invention includes an electron transporting layer, a hole transporting layer provided mutually facing the electron transporting layer with a distance between the hole transporting layer and the electron transporting layer, a phosphor layer having a layer of a plurality of semiconductor fine particles sandwiched between the electron transporting layer and the hole transporting layer, a first electrode provided facing the electron transporting layer and connected electrically, and a second electrode provided facing the hole transporting layer and connected electrically: in which the semiconductor fine particles composing the phosphor layer have a p-type part and an n-type part inside of the particles and have a pn-junction in the interface of the p-type part and the n-type part and are arranged in a manner that the p type part is partially brought into contact with the hole transporting layer and at the same time, the n type part is partially brought into contact with the electron transporting layer.
1. A method for manufacturing a light emitting device comprising:
forming a first electron transporting layer on a substrate;
forming a second electron transporting layer having fluidity on the first electron transporting layer;
forming a single particle layer of n-type semiconductor fine particles on the second electron transporting layer by arranging by one semiconductor fine particle in depth direction;
doping a p-type dopant on each n-type semiconductor fine particle to form a p-type part at an upper part while maintaining an n-type part at a lower part wherein each semiconductor fine particle has a p-type part at the upper part and n-type part at the lower part, and a pn-junction are formed between the p-type part and the n-type part in each semiconductor fine particle;
forming a hole transporting layer on the p-type part of each semiconductor fine particle of the single particle layer, wherein the p-type part of each semiconductor fine particle is partially contacted with the hole transporting layer, while the n-type part of each semiconductor fine particle is partially contacted with the second electron transporting layer; and
forming a second electrode on the hole transporting layer.
2. The method for manufacturing a light emitting device according to claim 1 , further comprising embedding a dielectric material in voids among the semiconductor fine particles and removing the dielectric material to expose upper parts of the semiconductor fine particles.
3. The method for manufacturing a light emitting device according to claim 1 , wherein the semiconductor fine particles include GaN.