Active pixel sensor having two wafers
View Patent ↗A vertically-integrated image sensor includes a sensor wafer connected to a support circuit wafer. Each pixel region on the sensor wafer includes a photodetector, a charge-to-voltage conversion mechanism, a transfer mechanism for transferring charge from the photodetector to the charge-to-voltage conversion mechanism, and a reset mechanism for discharging the charge-to-voltage conversion mechanism. The support circuit wafer includes an amplifier and other support circuitry for each pixel region on the sensor wafer. An inter-wafer connector directly connects each charge-to-voltage mechanism on the sensor wafer to a respective gate to an amplifier on the support circuit wafer.
1. An image sensor comprising:
(a) a sensor wafer comprising:
a first array of pixel regions with each pixel region including:
a photodetector for collecting charge in response to incident light;
a charge-to-voltage conversion mechanism;
a transfer mechanism for transferring charge from the photodetector to the charge-to-voltage mechanism; and
a reset mechanism for discharging the charge-to-voltage conversion mechanism;
(b) a support circuit wafer connected to the sensor wafer and including:
a second array of pixel regions having support circuitry for each pixel region in the first array, wherein each pixel region in the second array is associated with one or more pixel regions in the first array, and the support circuitry includes an amplifier; and
(c) an inter-wafer connector between each charge-to-voltage conversion mechanism on the sensor wafer and a gate of the amplifier in a respective pixel region on the support circuit wafer for transferring charge from the charge-to-voltage conversion mechanism to the amplifier.
2. The image sensor of claim 1 , wherein the charge-to-voltage conversion mechanism includes a floating diffusion.
3. The image sensor of claim 1 , wherein the support circuit wafer includes an interconnect layer and a Complementary Metal Oxide Semiconductor device layer.
4. The image sensor of claim 3 , wherein the Complementary Metal Oxide Semiconductor device layer includes the second array of pixel regions having support circuitry for each pixel region in the first array.
5. The image sensor of claim 1 , wherein the reset mechanism includes a reset drain of a reset transistor.
6. An image capture device comprising:
an image sensor including:
(a) a sensor wafer comprising:
a first array of pixel regions with each pixel region including:
a photodetector for collecting charge in response to incident light;
a charge-to-voltage conversion mechanism;
a transfer mechanism for transferring charge from the photodetector to the charge-to-voltage mechanism; and
a reset mechanism for discharging the charge-to-voltage conversion mechanism;
(b) a support circuit wafer connected to the sensor wafer and including:
a second array of pixel regions having support circuitry for each pixel region in the first array, wherein each pixel region in the second array is associated with one or more pixel regions in the first array, and the support circuitry includes an amplifier; and
(c) an inter-wafer connector between each charge-to-voltage conversion mechanism on the sensor wafer and a gate of the amplifier in a respective pixel region on the support circuit wafer for transferring charge from the charge-to-voltage conversion mechanism to the amplifier.
7. The image capture device of claim 6 , wherein the charge-to-voltage conversion mechanism includes a floating diffusion.
8. The image capture device of claim 6 , wherein the support circuit wafer includes an interconnect layer and a Complementary Metal Oxide Semiconductor device layer.
9. The image capture of claim 8 , wherein the Complementary Metal Oxide Semiconductor device layer includes the second array of pixel regions having support circuitry for each pixel region in the first array.
10. The image capture device of claim 6 , wherein the reset mechanism includes a reset drain of a reset transistor.