Photoresist composition and method of forming a photoresist pattern using the same
View Patent ↗A photoresist composition comprises about 0.5 to about 20 parts by weight of a photo-acid generator, about 10 to about 70 parts by weight of a novolac resin containing a hydroxyl group, about 1 to about 40 parts by weight of a cross-linker that comprises an alkoxymethylmelamine compound, and about 10 to about 150 parts by weight of a solvent.
1. A photoresist composition comprising:
about 0.5 to about 20 parts by weight of a photo-acid generator, the photoacid generator comprising a first compound represented by the following Chemical Formula 1 and a second compound represented by the following Chemical Formula 2;
about 10 to about 70 parts by weight of a novolac resin containing a hydroxyl group;
about 1 to about 40 parts by weight of a cross-linker, the cross-linker comprising hexamethoxymethylmelamine and hexamethylolmelamine hexamethylether; and
about 10 to about 150 parts by weight of a solvent.
wherein R 1 , R 2 and R 3 independently represent an alkyl group having 1 to 4 carbon atoms.
2. The photoresist composition of claim 1 , wherein the photo-acid generator further comprises a diazonium salt, an ammonium salt, an iodonium salt, a sulfonium salt, a phosphonium salt, an arsonium salt, an oxonium salt, a halogenated organic compound, a quinone diazide compound, a bis(sulfonyl)diazomethane compound, a sulfone compound, an organic acid-ester compound, an organic acid-amide compound an organic acid-imide compound, or a combination of at least one of the foregoing compounds.
3. The photoresist composition of claim 1 , wherein the cross-linker further comprises an alkoxymethylated amino resin, an alkyletherified melamine resin, a benzoguanamine resin, an alkyletherified benzoguanamine resin, a urea resin, an alkyletherified urea resin, a urethane-formaldehyde resin, a resol-type phenol formaldehyde resin, an alkyletherified resol-type phenol formaldehyde resin, an epoxy resin, or a combination comprising at least one of the foregoing resins.
4. The photoresist composition of claim 1 , wherein the solvent is glycol ether, ethylene glycol alkyl ether acetates a diethylene glycol, or a combination of at least one of the foregoing solvents.
5. The photoresist composition of claim 1 , further comprising about 0.1 to about 10 parts by weight of an additive comprising an adhesion promotion agent, a surfactant a photosensitizer, or a combination of at least one of the foregoing additives.
6. The photoresist composition of claim 5 , wherein the photosensitizer is tetrabutylammonium hydroxide, triethanolamine, diethanolamine, trioctylamine, n-octylamine, trimethylsulfonium hydroxide triphenylsulfonium hydroxide, or a combination of at least one of the foregoing photosensitizers.
7. The photoresist composition of claim 1 , wherein the photoacid generator is represented by Chemical Formula 5 and Chemical Formula 6
8. A method of forming a photoresist pattern, the method comprising:
coating a photoresist composition on a substrate to form a photoresist film, the photoresist composition comprising: about 0.5 to about 20 parts by weight of a photo-acid generator, the photo-acid generator comprising a first compound represented by the following Chemical Formula 1:
and a second compound represented by the following Chemical Formula 2:
wherein R 1 , R 2 and R 3 independently represent an alkyl group having 1 to 4 carbon atoms;
about 10 to about 70 parts by weight of a novolac resin containing a hydroxyl group; about 1 to about 40 parts by weight of a cross-linker including hexamethoxymethylmelamine and hexamethylolmelamine hexamethylether; and about 10 to about 150 parts by weight of a solvent;
exposing the photoresist film to light; and
removing a portion of the photoresist film to form a photoresist pattern.
9. The method of claim 8 , wherein the photoresist composition further comprises about 0.1 to about 10 parts by weight of an additive comprising an adhesion promotion agent, a surfactant or a photosensitizer, or a combination of at least one of the foregoing additives.
10. The method of claim 8 , wherein the photoresist film is exposed to light emanating from a mercury-xenon (Hg—Xe) lamp, a krypton fluoride laser, or an argon fluoride laser; or electron beam, X-ray, G-line ray, I-line ray light, or a combination of one of the foregoing lights.
11. The method of claim 8 , further comprising baking the photoresist film at a temperature of about 70° C. to about 130° C. before exposing the photoresist film to light.
12. The method of claim 8 , further comprising baking the photoresist film at a temperature of about 70° C. to about 160° C. after exposing the photoresist film to light.