Wiring structure and method of forming the same
A CNT bundle is formed by growing a plurality of CNTs from opposing surfaces of contact blocks toward mutual opposing surfaces, and by contacting the CNTs so that they intersect to electrically connect with each other. Subsequently, a gap of the electrically connected CNT bundle is filled with a metal material, to thereby form a wiring being a composite state of the CNT bundle and the metal material.
1. A method of forming a wiring structure comprising:
forming a pair of base conductors placed at an interval and facing each other above a substrate;
forming an insulating film formed over each of upper surfaces of the pair of base conductors while a part of surfaces including each of opposing surfaces of the pair of base conductors is exposed;
disposing catalyst materials for a wiring selectively on the part of surfaces exposed at the insulating film, using an electroless plating method over the substrate entirely including the insulating film; and
forming the wiring including a first wiring made of a carbon element, a second wiring made of the carbon element, and a third wiring made of the carbon element,
wherein the first wiring is electrically coupled to one of the pair of base conductors, linearly extends from the one of the pair of base conductors to the other of the pair of base conductors, and has a first portion which does not contact with the other of the pair of base conductors;
wherein the second wiring is electrically coupled to the other of the pair of base conductors, linearly extends from the other of the pair of base conductors to the one of the pair of base conductors, and has a second portion which does not contact with the one of the pair of base conductors;
wherein the third wiring is electrically coupled to the one of the pair of base conductors, linearly extends from the one of the pair of base conductors to the other of the pair of base conductors, and has a third portion which does not contact with the other of the pair of base conductors;
wherein the first portion and a first surface of the second portion are intersected and contacted with each other to electrically coupled to each other, and a second surface of the second portion and the third portion are intersected and contacted with each other to electrically coupled to each other;
wherein the method comprises:
forming a metal buried in a portion between a first remaining portion other than the first portion of the first wiring and a third remaining portion other than the third portion of the third wiring.
2. The method of forming the wiring structure according to claim 1 ,
wherein the wiring is carbon nano tubes or carbon nano fibers.
3. The method of forming the wiring structure according to claim 1 ,
wherein the base conductors are made of at least one element selected from the group consisting of titanium (Ti), titanium nitride (TiN), tungsten (W), molybdenum (Mo) and silver (Ag), or made of an alloy containing at least one element selected from the group.
4. The method of forming the wiring structure according to claim 1 ,
wherein the metal is made of at least one element selected from the group consisting of copper (Cu), titanium (Ti), titanium nitride (TiN), tungsten (W), molybdenum (Mo) and silver (Ag), or made of an alloy containing at least one element selected from the group.
5. The method of forming the wiring structure according to claim 1 ,
wherein one or a plurality of said pair of the base conductors are horizontally arranged and the wiring is formed in a lateral direction with respect to a horizontal plane to construct a layer structure.
6. The method of forming the wiring structure according to claim 5 ,
wherein the layer structure is stacked in a plurality of layers with via portions interposed therebetween to electrically connect said upper and lower base conductors to form a three-dimensional wiring network structure.
7. The method of forming the wiring structure according to claim 6 ,
wherein the via portions are made of the wiring.
8. The method of forming the wiring structure according to claim 7 ,
wherein a buried insulating film is formed to bury at least a part of the base conductors and the wiring when forming the respective layer structures;
wherein an interlayer insulating film is formed to bury between the layer structures when forming the via portions; and
wherein the buried insulating film and the interlayer insulating film are removed after forming the respective layer structures and the via portions.