Semiconductor device for implementing signal transmission and/or power supply by means of the induction of a coil
View Patent ↗A plurality of LSI chips ( 1 ) are stacked on an interposer ( 2 ). Signal coils ( 1 b ) for signal transmission are formed on the circuit formation surfaces of LSI chips ( 1 ) that are formed using silicon substrates ( 1 a ). The signal coils ( 1 b ) connect to circuits formed in the LAI chips ( 1 ). Through-holes ( 1 d ) are formed in the centers of the signal coils ( 1 b ) of the silicon substrate ( 1 a ). Signal coils ( 2 c ) connected to solder balls ( 5 ) by way of through-conductors ( 2 d ) are formed on the interposer ( 2 ). Magnetic pins ( 3 ) that are composed of a magnetic material are inserted in the centers of the signal coils ( 1 b and 2 c ).
1. A semiconductor device in which a plurality of LSI chips are stacked and in which transmission of signals between said LSI chips is carried out by way of coils, wherein:
through-holes are formed that pass through said LSI chips inside said coils of said LSI chips, and magnetic pins that contain a magnetic material are inserted into said through-holes.
2. A semiconductor device in which one or a plurality of stacked LSI chips are mounted on an interposer on which magnetic pins that contain a magnetic material are established perpendicular to the surface and on which coils are formed on the surface surrounding said magnetic pins; and on at least one of said LSI chips, coils are formed that are electromagnetically coupled with said coils that are formed on said interposer; wherein:
in the centers of said coils of said LSI chip, through-holes are formed that pass through said LSI chip; and
said magnetic pins are inserted in these through-holes.
3. The semiconductor device according to claim 2 , wherein said magnetic pins are established to pass through a plurality of said LSI chips.
4. The semiconductor device according to claim 2 , wherein a portion of the plurality of said magnetic pins is established to pass through a portion of the plurality of said LSI chips that are stacked, and another portion of the plurality of said magnetic pins is established to pass through all of the plurality of said LSI chips.
5. The semiconductor device according to any one of claims 2 to 4 , wherein said magnetic pins are used to carry out exchange of signals between said coils formed on said interposer and said coils formed on said LSI chips, or between said coils formed on said interposer and said coils formed on said LSI chips and between said coils formed on said LSI chips.
6. The semiconductor device according to any one of claims 2 to 4 , wherein:
on said interposer, conductive pins in which at least the surface portions are formed by a conductive material and that are connected to power-supply lines are established perpendicular to the surface of said interposer; and
said conductive pins are inserted into said through-holes formed in said LSI chips, and said conductive pins are electrically connected to power-supply lines formed on said LSI chips.
7. The semiconductor device according to claim 6 , wherein:
wall-surface conductive films are formed on the inner wall surfaces of said through-holes of said LSI chips into which said conductive pins are inserted; and
said wall-surface conductive films contact said conductive pins.
8. The semiconductor device according to claim 6 , wherein:
conductive plates are established that cover said through-holes of said LSI chips into which said conductive pins are inserted, that have slits formed in a radiating form, and that connect to said power-supply lines formed on said LSI chips; wherein said conductive plates contact said conductive pins.
9. The semiconductor device according to claim 2 , wherein power is supplied from said coils formed on said interposer to circuits formed on said LSI chips by way of said coils formed on said LSI chips.
10. The semiconductor device according to claim 2 , wherein:
said magnetic pins are used to carry out exchange of signals between said coils formed on said interposer and said coils formed on said LSI chips, or between said coils formed on said interposer and said coils formed on said LSI chips and between said coils formed on said LSI chips; and
said magnetic pins are used to supply power from said coils formed on said interposer to circuits formed on said LSI chips by way of said coils formed on said LSI chips.
11. The semiconductor device according to claim 9 or claim 10 , wherein said coils for power supply are formed on obverse and reverse surfaces of said LSI chips.
12. The semiconductor device according to claim 9 or claim 10 , wherein said coils for power supply are formed around two said magnetic pins established in proximity, and the two magnetic pins are magnetically coupled with magnetic films that are formed on each of said LSI chip that is stacked uppermost and said interposer.
13. The semiconductor device according to claim 9 , wherein exchange of signals between circuits formed on said interposer and circuits formed on said LSI chips, or between circuits formed on said interposer and circuits formed on said LSI chips and between circuits formed on said LSI chips is carried out electromagnetically by way of coils for signal transmission formed on each of said interposer and said LSI chips.
14. The semiconductor device according to claim 9 , wherein exchange of signals between circuits formed on said interposer and circuits formed on said LSI chips, or between circuits formed on said interposer and circuits formed on said LSI chips and between circuits formed on said LSI chips is carried out by capacitive coupling by way of electrodes for signal transmission formed on each of said interposer and said LSI chips.
15. The semiconductor device according to claim 2 , wherein:
through-holes within which through-conductors are formed are formed on said interposer; and
said coils formed on said interposer are connected to external connection terminals formed on the reverse surface by way of said through-conductors.
16. The semiconductor device according to claim 2 , wherein: on the surface of said interposer on which said coils are formed, external connection terminals are formed that are connected to said coils.
17. The semiconductor device according to claim 2 , wherein said magnetic pins are formed entirely from a magnetic material, or are realized by covering the surface of a semiconductor material with a magnetic material.
18. The semiconductor device according to claim 6 , wherein said conductive pins are formed entirely from a magnetic material, or are of a construction by covering the surface of a semiconductor material with a magnetic material.
19. The semiconductor device according to claim 6 , wherein said conductive pins are formed entirely from a magnetic material, or are realized by forming a conductive film on the surfaces of said magnetic pins that are realized by covering the surface of a semiconductor material with a magnetic material.