Low-noise amplifier circuit and receiving system
View Patent ↗In a broadband low-noise amplifier circuit to be used in a multichannel reception system, a capacitance of a variable capacitor ( 9 ) is controlled by a resonance frequency control circuit ( 4 ) so that a resonance frequency of a load unit ( 2 ) comprising the variable capacitor ( 9 ) and an inductor ( 10 ) matches a desired RF signal frequency. Therefore, high gain and broadband can be realized at the same time without increasing power consumption, and consequently, a reception system having reduced power consumption and high sensitivity for all channels can be realized.
1. A low-noise amplifier circuit comprising:
a signal amplifier unit having an input terminal and an output terminal, for amplifying an input signal,
a load unit connected between the output terminal and a power supply terminal, for converting a current signal from the output terminal into a voltage signal,
a RF signal supplier connected to the input terminal, for supplying a RF signal,
a resonance frequency control circuit for controlling a resonance frequency of the load unit according to a frequency of an RF signal supplied from the RF signal supplier,
a first transistor having drain, gate, and source terminals connected to a first output terminal, a first input terminal, and a first node, respectively,
a second transistor having drain, gate, source terminals connected to a second output terminal, a second input terminal, and the first node, respectively, and
a current source connected between the first node and a ground terminal, and said load unit comprises
a first inductor connected between the power supply terminal and the first output terminal,
a second inductor connected between the power supply terminal and the second output terminal, and
a capacitor connected between the first output terminal and the second output terminal,
wherein at least either of inductances of the first and second inductors or a capacitance of the capacitor is variable.
2. A low-noise amplifier circuit as defined in claim 1 wherein
said RF signal supplier is for supplying an RF signal comprising plural channels, and
said resonance frequency control circuit is for controlling the resonance frequency of the load unit to match the resonance frequency with a frequency band of a desired channel included in a plural channel RF signal.
3. A low-noise amplifier circuit as defined in claim 1 wherein
said load unit includes an inductor and a variable capacitor, and
said resonance frequency control circuit is for controlling a capacitance of the capacitor according to the frequency of an RF signal.
4. A low-noise amplifier circuit as defined in claim 1 wherein
said load unit includes a variable inductor and a capacitor, and
said resonance frequency control circuit is for controlling an inductance of the variable inductor according to the frequency of an RF signal.
5. A low-noise amplifier circuit as defined in claim 1 wherein
said load unit includes a variable inductor and a variable capacitor, and
said resonance frequency control circuit controls is for controlling both an inductance of the variable inductor and a capacitance of the variable capacitor according to the frequency of an RF signal.
6. A low-noise amplifier circuit as defined in claim 1 wherein
said signal amplifier unit includes a transistor having drain, gate, and source terminals connected to the output terminal, the input terminal, and a ground terminal, respectively, and
said load unit includes an inductor connected between the power supply terminal and the output terminal, and a capacitor connected between the output terminal and the power supply terminal or the ground terminal, and at least either of an inductance of the inductor or a capacitance of the capacitor is variable.
7. A low-noise amplifier circuit as defined in claim 1 , and integrated on a single semiconductor chip.
8. A low-noise amplifier circuit as defined in claim 1 , in a television tuner system.
9. A low-noise amplifier circuit as defined in claim 2 wherein the RF signal has a signal band of 1 GHz or more.
10. A low-noise amplifier circuit as defined in claim 3 wherein the inductor included in the load unit is an on-chip inductor.
11. A low-noise amplifier circuit as defined in claim 6 wherein said transistor is a MOS transistor.
12. A low-noise amplifier circuit as defined in claim 4 wherein the inductor or the variable inductor included in the load unit is an on-chip inductor.
13. A low-noise amplifier circuit as defined in claim 5 wherein the inductor is the variable inductor included in the load unit is an on-chip inductor.
14. A low-noise amplifier circuit as defined in claim 6 wherein the inductor included in the load unit is an on-chip inductor.
15. A low-noise amplifier circuit as defined in claim 1 wherein the inductor included in the load unit is an on-chip inductor.
16. A low-noise amplifier circuit as defined in claim 1 wherein said transistor is a MOS transistor.