Materials for N-doping the electron-transporting layers in organic electronic components
View Patent ↗The invention pertains to new materials based on sterically inhibited donor arylboranes for the improvement of electron injection and electron transport in organic electronic components like organic light-emitting diodes (OLED's), organic field effect transistors (OFET's), and on organic photovoltaics based components, in particular, organic solar cells.
1. Material for n-doping of an electron-transporting layer in organic electronic components, wherein said material comprises at least one sterically inhibited donor arylboranes of substructures 1 and 2,
wherein:
Do represents an electron donor,
R 1 is sulfur and forms a bridge to the neighboring donor substituent Do,
R 2 is H or methyl, and
R 3 and R 4 can be hydrogen or form a joint annelated aromatic ring.
2. Material according to claim 1 with Do in one of substructures 1 or 2 selected from a group of functional groups comprising nitrogen with an aromatic substituent.
3. Method for n-doping an electron-transporting layer of an organic electronic component, the method comprising n-doping the electron-transporting layer with a material according to claim 1 .
4. Organic electronic component comprised of at least two electrodes with an active layer, wherein located between at least one electrode and the active layer is an electron-transporting layer doped with a material according to claim 1 .
5. Material according to claim 1 , comprising the following sterically inhibited donor arylborane structure:
6. Material according to claim 1 with Do in one of substructures 1 or 2 selected from a group of functional groups comprising nitrogen with a phenyl or naphthyl substituent.