Semiconductor pressure sensor and its fabrication method
View Patent ↗A semiconductor pressure sensor comprises a silicon support substrate ( 1 ), an insulating layer ( 2 ) formed on the silicon support substrate ( 1 ), and a silicon thin plate ( 3 ) formed on the insulating layer ( 2 ). A through-hole ( 1 a ) extending in the thickness direction of the silicon support substrate ( 1 ) is formed in the silicon support substrate ( 1 ). The silicon thin plate ( 3 ) located on an extension of the through-hole ( 1 a ) functions as a diaphragm ( 23 ) that is deformed by an external pressure. The insulating layer ( 2 ) remains over the entire lower surface of the diaphragm ( 23 ). The thickness of the insulating layer ( 2 ) decreases from the peripheral portion toward the central portion of the diaphragm ( 23 ). This provides the semiconductor pressure sensor capable of reducing both the offset voltage and the variation of output voltage caused by the variation of temperature and its fabrication method.
1. A semiconductor pressure sensor comprising:
a semiconductor support substrate provided with a through-hole extending in thickness direction of the substrate;
a semiconductor thin plate positioned on said semiconductor support substrate; and
an insulating layer, held between said semiconductor support substrate and said semiconductor thin plate, having a recess on a position facing said through-hole so that the thickness on the position of said recess decreases from the peripheral portion toward the central portion, wherein the insulating layer covers an entire surface of one end of the through-hole while a lower side portion of the insulating layer is removed such that the lower side portion of the insulating layer has a shape which has a portion which is concave facing the through-hole.
2. The semiconductor pressure sensor according to claim 1 , wherein
A÷Tmax is at least 5 assuming that A represents the distance between an end of a region where the thickness of said insulating layer is Tmax and a position where the thickness of said insulating layer reaches (Tmax+Tmin)÷2 when Tmax represents the maximum value of the thickness of said insulating layer and Tmin represents the minimum value of the thickness of said insulating layer.
3. The semiconductor pressure sensor according to claim 2 , wherein
the maximum value Tmax of the thickness of said insulating layer is not more than 2 μm.
4. The semiconductor pressure sensor according to claim 1 , wherein
The peripheral portion of said recess is positioned outward beyond the peripheral portion of said through-hole.
5. A method of fabricating a semiconductor pressure sensor, comprising:
preparing an intermediate structure comprising a semiconductor support substrate, an insulating layer provided on said semiconductor support substrate and a semiconductor thin plate formed on said insulating layer;
forming a through-hole extending in a thickness direction in said semiconductor support substrate; and
forming a recess in said insulating layer so that the thickness of said insulating layer on a position facing said through-hole decreases from the peripheral portion toward the central portion, wherein the insulating layer is formed to cover an entire surface of one end of the through-hole while a lower side portion of the insulating layer is removed such that the lower side portion of the insulating layer has a shape which has a portion which is concave facing the through-hole.
6. The method of fabricating a semiconductor pressure sensor according to claim 5 , wherein
said recess is formed by dry-etching said insulating layer.
7. The method of fabricating a semiconductor pressure sensor according to claim 5 , wherein
the peripheral portion of said recess is positioned outward beyond the peripheral portion of said through-hole in the step of forming said recess in said insulating layer.