Solid state neutron detector
View Patent ↗The invention relates to a neutron detector for detection of neutrons in fields with significant γ- or β-radiation, comprising a neutron sensitive scintillator crystal, providing a neutron capture signal being larger than the capture signal of 3 MeV γ-radiation, a semiconductor based photo detector being optically coupled to the scintillator crystal, where the scintillator crystal and the semiconductor based photo detector are selected so that the total charge collection time for scintillator signals in the semiconductor based photo detector is larger than the total charge collection time for signals generated by direct detection of ionizing radiation in the semiconductor based photo detector, the neutron detector further comprising a device for sampling the detector signals, a digital signal processing device, means which distinguish direct signals from the semiconductor based photo detector, caused by γ- or β-radiation and being at least partially absorbed in the semiconductor based photo detector, from light signals entering the semiconductor based photo detector, after being emitted from the scintillator crystal after capturing at least one neutron, by means of pulse shape discrimination, utilizing a difference between the total charge collection time for scintillator signals from the total charge collection time for signals generated by direct detection of ionizing radiation in the semiconductor based photo detector, and means which distinguish neutron induced signals from γ-radiation induced signals in the scintillator crystal by discriminating the different signals via their pulse height, making use of the difference between the number of photons generated by neutron and γ-radiation in the field of interest.
1. Neutron detector for detection of neutrons in fields with significant γ- or β-radiation, comprising
a neutron sensitive scintillator crystal, adapted to provide a neutron capture signal being larger than the capture signal of 3 MeV γ-radiation,
a semiconductor based photo detector being optically coupled to the scintillator crystal and adapted to generate a detector signal, where the scintillator crystal and the semiconductor based photo detector are selected so that the total charge collection time for scintillator signals in the semiconductor based photo detector is larger than the total charge collection time for signals generated by direct detection of ionizing radiation in the semiconductor based photo detector,
electronic circuitry adapted to sample the detector signals, and
a digital signal processing device, wherein the digital signal processing device is adapted to
distinguish direct signals from the semiconductor based photo detector, cause by γ- or β-radiation and being at least partially absorbed in the semiconductor based photo detector, from light signals entering the semiconductor based photo detector, after being emitted from the scintillator crystal after capturing at least one neutron, by means of pulse shape discrimination, utilizing a difference between the total charge collection time for scintillator signals generated by direct detection of ionizing radiation in the semiconductor based photo detector, and
distinguish neutron induced signals from γ-radiation induced signals in the scintillator crystal by discriminating the different signals via their pulse height, making use of the difference between the number of photons generated by neutron and γ-radiation in the field of interest.
2. Neutron detector according to claim 1 , characterized in that the semiconductor based photo detector is a Silicon Drift Detector (SDD).
3. Neutron detector according to claim 1 , characterized in that the light decay time of the scintillation crystal is larger than 100 ns.
4. Neutron detector according to claim 1 , characterized in that the scintillation crystal comprises 6 LiI(Eu).
5. Neutron detector according to claim 1 , characterized in that the semiconductor based photo detector is selected from a group of detectors, comprising a Photo Diode (PD) and an Avalanche Photo Diode (APD).
6. Neutron detector according to claim 1 , characterized in that the scintillation crystal is smaller than 2 cm 3 , preferably smaller than 0.5 cm 3 .
7. Neutron detector according to claim 1 with a surrounding neutron moderating medium.
8. Neutron detector according to claim 2 with a surrounding neutron moderating medium.
9. Neutron detector according to claim 3 with a surrounding neutron moderating medium.
10. Neutron detector according to claim 4 with a surrounding neutron moderating medium.
11. Neutron detector according to claim 5 with a surrounding neutron moderating medium.
12. Neutron detector according to claim 6 surrounding neutron moderating medium.