Solid-state imaging devices
View Patent ↗A solid-state imaging device includes: a substrate; a photoelectric transducer that is provided within the substrate and generates light-generated charge in accordance with incident light; a floating diffusion that retains the light-generated charge generated from the photoelectric transducer; a transfer and retention unit that is provided between the photoelectric transducer and the floating diffusion for a purpose of controlling a transfer of the light-generated charge and has a charge-retaining region that can retain the light-generated charge generated from the photoelectric transducer; a reset unit that initializes a potential of the floating diffusion; an amplifying transistor that generates an output based on a potential of the floating diffusion; a selection transistor that selectively outputs an output of the amplifying transistor; and an excessive charge-discharging unit that discharges excessive electric charge generated from the photoelectric transducer.
1. A solid-state imaging device, comprising:
a photoelectric transducer that is adapted to generate a light-generated charge in accordance with incident light,
a floating diffusion that is adapted to retain the light-generated charge generated from the photoelectric transducer;
a transfer and retention unit that is disposed between the photoelectric transducer and the floating diffusion and is adapted to control a transfer of the light-generated charge, the transfer and retention unit having a charge-retaining region that is adapted to retain the light-generated charge generated from the photoelectric transducer;
a reset unit that is adapted to initialize a potential of the floating diffusion;
an amplifying transistor that is adapted to generate an output based on a potential of the floating diffusion;
a selection transistor that is adapted to selectively output the output of the amplifying transistor; and
an excessive charge-discharging unit that is adapted to discharge excessive electric charge generated from the photoelectric transducer, the excessive charge-discharging unit being positioned such that the photoelectic transducer is positioned between the transfer and retention unit and the excessive charge-discharging unit.
2. The solid-state imaging device according to claim 1 ,
wherein the photoelectric transducer includes:
a first impurity region;
wherein the excessive charge-discharging unit includes:
a second impurity region that is coupled to a fixed potential point; and
a third impurity region that contacts the second impurity region and the first impurity region.
3. A solid-state imaging device comprising:
a photoelectric transducer that is adapted to generate a light-generated charge in accordance with incident light, the photoelectric transducer including a first impurity region;
a floating diffusion that is adapted to retain the light-generated charge generated from the photoelectric transducer;
a transfer and retention unit that is disposed between the photoelectric transducer and the floating diffusion and that is adapted to control a transfer of the light-generated charge, the transfer and retention unit having a charge-retaining region that is adapted to retain the light-generated charge generated from the photoelectric transducer;
a reset unit that is adapted to initialize a potential of the floating diffusion;
an amplifying transistor that is adapted to generate an output based on a potential of the floating diffusion;
a selection transistor that is adapted to selectively output the output of the amplifying transistor; and
an excessive charge-discharging unit that is adapted to discharge excessive electric charge generated from the photoelectric transducer, the excessive charge-discharging unit including: a second impurity region that is coupled to a fixed potential point; and a third impurity region that contacts the second impurity region and the first impurity region.
4. A solid-state imaging device, comprising:
a photoelectric transducer that is adapted to generate a light-generated charge in accordance with incident light;
a floating diffusion that is adapted to retain the light-generated charge generated from the photoelectric transducer;
a transfer and retention unit that is disposed between the photoelectric transducer and the floating diffusion and that is adapted to control a transfer of the light-generated charge, the transfer and retention unit having a charge-retaining region and an impurity region, the charge-retaining region being adapted to retain the light-generated charge generated from the photoelectric transducer, and the impurity region connecting the charge-retaining region and the floating diffusion;
a reset unit that is adapted to initialize a potential of the floating diffusion;
an amplifying transistor that is adapted to generate an output based on a potential of the floating diffusion;
a selection transistor that is adapted to selectively output the output of the amplifying transistor; and
an excessive charge-discharging unit that is adapted to discharge excessive electric charge generated from the photoelectric transducer.
5. The solid-state imaging device according to claim 3 ,
wherein the photoelectric transducer includes:
a second impurity region;
wherein the excessive charge-discharging unit includes:
a third impurity region that is coupled to a fixed potential point; and
a fourth impurity region that contacts the second impurity region and the third impurity region.