Solar cell and method of manufacture
View Patent ↗A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed. A front surface of the wafer is preferably textured by etching or mechanical abrasion with an IR reflection layer provided over the textured surface. A field layer can be provided in the textured surface with the combined effect being a very low surface recombination velocity.
1. A solar cell comprising:
a silicon substrate having a front surface and a back surface;
an oxide layer formed over the back surface of the silicon substrate;
a first plurality of metal contacts each being electrically coupled to a first doped region of the solar cell and formed through the oxide layer; and
a second plurality of metal contacts each being electrically coupled to a second doped region of the solar cell and formed through the oxide layer, the first and second doped regions being of opposite polarity;
wherein each of the first and second plurality of metal contacts comprises an infrared reflecting layer comprising aluminum configured to reflect infrared back into the silicon substrate, and wherein each of the first and second plurality of metal contacts further comprises a diffusion barrier layer formed over the infrared reflecting layer and a first metal formed over the diffusion barrier layer.
2. The solar cell of claim 1 wherein the front surface of the silicon substrate is textured.
3. The solar cell of claim 2 further comprising an antireflection coating over the textured front surface of the silicon substrate.
4. The solar cell of claim 3 wherein the antireflection coating comprises silicon nitride.
5. The solar cell of claim 1 wherein the first metal comprises copper serving as a plating seed layer for a second metal comprising copper.
6. The solar cell of claim 1 wherein the diffusion barrier layer comprises titanium and the first metal comprises copper.
7. A solar cell comprising:
a silicon substrate having a textured front surface and a back surface;
a plurality of doped regions;
an oxide layer formed over the back surface of the silicon substrate; and
a plurality of metal contacts formed through the oxide layer to make electrical connections to corresponding doped regions in the plurality of doped regions, each of the metal contacts comprising an infrared reflecting layer configured to reflect infrared back into the silicon substrate, the infrared reflecting layer comprising aluminum, wherein each of the metal contacts further comprises a diffusion barrier layer formed over the infrared reflecting layer and a seed layer formed over the barrier layer.
8. The solar cell of claim 7 further comprising:
an antireflection coating formed over the textured front surface.
9. The solar cell of claim 8 wherein the antireflection coating comprises silicon nitride.
10. The solar cell of claim 7 wherein the diffusion barrier layer comprises titanium and the seed layer comprises copper.
11. The solar cell of claim 7 further comprising a plurality of metal grid lines electrically coupled to corresponding metal contacts in the plurality of metal contacts.