IP Library Granted Patent US 8,222,516
Granted Patent B2
US 8,222,516 · App. 12/070,742 · Granted Jul 17, 2012

Front contact solar cell with formed emitter

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Quick Facts
Patent No.
US 8,222,516
App. No.
12/070,742
Granted
Jul 17, 2012
Kind
B2
Abstract

A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

Claims (24)

1. A solar cell having a front side facing the sun to collect solar radiation during normal operation and a backside opposite the front side, the solar cell comprising:

an N-type silicon substrate;

a textured surface on the N-type silicon substrate on the front side of the solar cell;

an antireflective layer over the textured surface of the N-type silicon substrate;

a P-type polysilicon emitter formed over the N-type silicon substrate and forming a backside junction with the N-type silicon substrate;

an oxide layer formed between the P-type polysilicon emitter and the N-type silicon substrate;

a negative polarity metal contact making an electrical connection to the N-type silicon substrate from the front side of the solar cell; and

a positive polarity metal contact making an electrical connection to the P-type polysilicon emitter from the backside of the solar cell.

2. The solar cell of claim 1 wherein the antireflective layer comprises a layer of silicon nitride.

3. The solar cell of claim 1 further comprising a dielectric layer over the P-type polysilicon emitter.

4. The solar cell of claim 3 wherein the dielectric layer comprises silicon dioxide.

5. The solar cell of claim 3 further comprising a trench cutting through the dielectric layer and the P-type polysilicon emitter and into a portion of the N-type silicon substrate on the backside of the solar cell.

6. The solar cell of claim 1 wherein the positive polarity metal contact comprises a metal forming an infrared reflecting layer with a dielectric layer.

7. The solar cell of claim 1 wherein the positive polarity metal contact comprises silver forming an infrared reflecting layer with a dielectric layer comprising silicon dioxide.

8. The solar cell of claim 1 wherein the negative polarity metal contact comprises a metal formed in a contact hole to the N-type silicon substrate.

9. A solar cell having a front side facing the sun to collect solar radiation during normal operation and a backside opposite the front side, the solar cell comprising:

a substrate having a textured front surface;

an emitter layer formed over a back surface of the substrate, the emitter layer forming a backside junction with the substrate;

an oxide layer formed between the back surface of the substrate and the emitter layer;

a first metal contact making an electrical connection to the substrate on the front side of the solar cell; and

a second metal contact making an electrical connection to the emitter layer on the backside of the solar cell, the first metal contact and the second metal contact being configured to allow an external electrical circuit to be powered by the solar cell.

10. The solar cell of claim 9 further comprising an antireflective layer over the textured front surface of the substrate.

11. The solar cell of claim 9 wherein the substrate comprises an N-type silicon substrate and the emitter layer comprises a P-type doped polysilicon.

12. The solar cell of claim 9 wherein the second metal contact comprises silver formed over a layer of silicon dioxide.

Assignments (6)
SECURITY INTEREST Recorded Jun 27, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067924/0062 →
SECOND LIEN SECURITY INTEREST AGREEMENT Recorded Jun 26, 2024
From: MAXEON SOLAR PTE. LTD
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 071343/0553 →
SECURITY INTEREST Recorded Jun 5, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067637/0598 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2023
From: SUNPOWER CORPORATION
To: MAXEON SOLAR PTE. LTD.
Reel/Frame 062490/0742 →
CONFIRMATORY LICENSE Recorded Mar 15, 2012
From: SUNPOWER CORPORATION
To: UNITED STATES DEPARTMENT OF ENERGY
Reel/Frame 027883/0099 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 20, 2008
From: COUSINS, PETER JOHN
To: SUNPOWER CORPORATION
Reel/Frame 020595/0791 →