Current mirror circuit
View Patent ↗A current mirror circuit has a first MOS transistor to which an input current is supplied. The first MOS transistor has a gate formed of polysilicon. A second MOS transistor has a gate formed of polysilicon and connected directly to the gate of the first MOS transistor via a polysilicon layer for producing an output current whose magnitude is a magnitude of the input current multiplied by a current mirror ratio. A fuse has one terminal connected to a gate portion between the gate of the first MOS transistor and the gate of the second MOS transistor and another terminal that is grounded.
1. A current mirror circuit, comprising:
a first MOS transistor to which an input current is supplied, the first MOS transistor having a gate formed of polysilicon;
a second MOS transistor having a gate formed of polysilicon and connected directly to the gate of the first MOS transistor via a polysilicon layer for producing an output current whose magnitude is a magnitude of the input current multiplied by a current mirror ratio; and
a fuse having one terminal connected to a gate portion between the gate of the first MOS transistor and the gate of the second MOS transistor and another terminal that is grounded.
2. A current mirror circuit according to claim 1 ; wherein the fuse comprises a removable fuse that it is cut off during a trimming process performed after finishing a production process of the current mirror circuit.
3. A current mirror circuit comprising:
a pair of MOS transistors each having a gate formed of polysilicon;
a polysilicon element directly interconnecting the gates of the MOS transistors to one another; and
a fuse having one terminal connected to the polysilicon element and another terminal connected to a ground.
4. A current mirror circuit according to claim 3 ; wherein the fuse comprises a removable fuse that it is cut off during a trimming process performed after finishing a production process of the current mirror circuit.
5. A current mirror circuit according to claim 3 ; wherein each of the MOS transistors is connected to a current source that provides an input current; and wherein the polysilicon element interconnects the gates of the MOS transistors to one another to produce an output current whose magnitude is a magnitude of the input current multiplied by a current mirror ratio.
6. A current mirror circuit according to claim 3 ; wherein the pair of MOS transistors comprises a first MOS transistor and a second MOS transistor; wherein the first MOS transistor has a source connected to a current source and a drain connected to the gate thereof; and wherein the second MOS transistor has a source connected to the current source and a drain connected to an output terminal.
7. A current mirror circuit according to claim 3 ; wherein the one terminal of the fuse is connected to a central part of the polysilicon element.