Load driving circuit, driver IC having a load driving circuit, and plasma display panel having a driver IC
View Patent ↗A load driving circuit in which a load is connected to the connecting point of transistors as low-side and high-side main switch elements that have a totem pole structure and are connected between a pair of drive voltage supply lines. A protection circuit section is provided for the high-side transistor. In the protection circuit section, a resistor as a voltage control element is provided for a MOSFET as an overvoltage prevention switch and a capacitor is connected between the gate and the drain of the MOSFET.
1. A load driving circuit comprising
an output terminal for connection to a load;
two main switch elements, including a low-side main switch element and a high-side main switch element having a totem pole structure and connected between a pair of drive voltage supply lines, at least one of the two main switch elements being connected to the output terminal;
an overvoltage prevention switch configured to connect a control electrode and a low-potential-side control subject electrode of one of the two main switch elements; and
a voltage control circuit including voltage-dividing components connected in series, each voltage-dividing component being one of a resistor and a capacitor, the voltage control circuit being configured to turn on the overvoltage prevention switch during a prescribed period at the time of potential variation at the output terminal, a first one of the voltage-dividing components being connected between a control terminal of the overvoltage prevention switch and the low-potential-side control subject electrode of the one main switch element and a second one of the voltage-dividing components being connected between the control terminal of the overvoltage prevention switch and the control electrode of the one main switch element, so that a potential at one end of the first one of the voltage-dividing components is applied at the control terminal of the overvoltage prevention switch and a potential at the other end of the first one of the voltage-dividing components is applied at the low-potential-side control subject electrode of the one main switch element.
2. The load driving circuit according to claim 1 , further comprising a Zener diode configured to protect the control electrode of the high-side main switch element from an overvoltage, the Zener diode connected between the control electrode and low-potential-side control subject electrode of the high-side main switch element.
3. The load driving circuit according to claim 1 , wherein the one of the two main switch elements is the high-side main switch element;
the overvoltage prevention switch includes a p-channel MOSFET; and
the voltage control circuit includes as the voltage-dividing components a resistor and a capacitor, respectively connecting the control electrode and low-potential-side control subject electrode of the high-side main switch element to a gate electrode of the p-channel MOSFET.
4. The load driving circuit according to claim 1 , wherein
the one of the two main switch elements is the high-side main switch element;
the overvoltage prevention switch includes an n-channel MOSFET; and
the voltage control circuit includes as the voltage-dividing components a capacitor and a resistor respectively connecting the control electrode and low-potential-side control subject electrode of the high-side main switch element to a gate electrode of the n-channel MOSFET.
5. The load driving circuit according to claim 1 , wherein the one of the two main switch elements is the high-side main switch element;
the overvoltage prevention switch includes a first p-channel or first n-channel MOSFET; and
the voltage control circuit includes as the voltage-dividing components a pair of resistors which connect a gate electrode of the first MOSFET to the control electrode and low-potential-side control subject electrode of the high-side main switch element, respectively.
6. The load driving circuit according to claim 5 , wherein
the overvoltage prevention switch further includes a second MOSFET, the second MOSFET being a p-channel MOSFET; and
the voltage control circuit further includes as the voltage-dividing components a resistor and a capacitor respectively connecting the control electrode and low-potential-side control subject electrode of the high-side main switch element to the gate electrode of the second p-channel MOSFET.
7. The load driving circuit according to claim 5 , wherein the overvoltage prevention switch further includes a second MOSFET, the second MOSFET being an n-channel MOSFET; and
the voltage control circuit further includes as the voltage-dividing components a capacitor and a resistor respectively connecting the control electrode and the low-potential-side control subject electrode of the high-side main switch element to a gate electrode of the second n-channel MOSFET.
8. The load driving circuit according to claim 1 , wherein the one of the two main switch elements is the low-side main switch element;
the overvoltage prevention switch includes a p-channel MOSFET; and
the voltage control circuit includes as the voltage-dividing components a resistor and a capacitor respectively connecting the control electrode and low-potential-side control subject electrode of the low-side main switch element to a gate electrode of the p-channel MOSFET.
9. The load driving circuit according to claim 1 , wherein the one of the two main switch elements is the low-side main switch element;
the overvoltage prevention switch includes an n-channel MOSFET; and
the voltage control circuit includes as the voltage-dividing components a capacitor and a resistor respectively connecting the control electrode and low-potential-side control subject electrode of the low side main switch element to a gate electrode of the n-channel MOSFET.
10. The load driving circuit according to claim 1 , wherein the one of the two main switch elements is the low-side main switch element;
the overvoltage prevention switch includes a first p-channel or first n-channel MOSFET;
the voltage control circuit includes as the voltage-dividing components a pair of resistors which connect a gate electrode of the first MOSFET to the control electrode and low-potential-side control subject electrode of the low-side main switch element, respectively; and
a voltage division ratio of the pair of resistors is determined so that the first MOSFET is turned on even if a width of the voltage variation at the output terminal is lower than a drive voltage which is supplied from the pair of drive voltage supply lines.
11. The load driving circuit according to claim 10 , wherein
the overvoltage prevention switch further includes a second MOSFET, the second MOSFET being a p-channel MOSFET; and
the voltage control circuit further includes as the voltage-dividing components a resistor and a capacitor respectively connecting the control electrode and low-potential-side control subject electrode of the low-side main switch element to a gate electrode of the second p-channel MOSFET.
12. The load driving circuit according to claim 10 , wherein
the overvoltage prevention switch further includes a second MOSFET being an n-channel MOSFET; and
the voltage control circuit further includes as the voltage-dividing components a capacitor and a resistor respectively connecting the control electrode and low-potential-side control subject electrode of the low-side main switch element to a gate electrode of the second n-channel MOSFET.
13. The load driving circuit according to claim 1 , wherein the load driving circuit is included within a single integrated circuit.
14. A drive device for driving a plasma display panel, comprising
a plurality of the load driving circuits according to claim 13 , each connected with a scanning electrode of the plasma display panel.
15. A load driving circuit, comprising
an output terminal for connection to a load;
two main switch elements, including a low-side main switch element and a high-side main switch element having a push-pull structure and connected between a pair of drive voltage supply lines, at least one of the two main switch elements being connected to the output terminal;
a high-side overvoltage prevention switch configured to connect a control electrode and a low-potential-side control subject electrode of the high-side main switch element;
a high-side voltage control circuit including high-side voltage-dividing components connected in series, each high-side voltage-dividing component being one of a resistor and a capacitor, the high-side voltage control circuit being configured to turn on the high-side overvoltage prevention switch during a prescribed period at the time of potential variation at the output terminal, a first one of the high-side voltage-dividing components being connected between a control terminal of the high-side overvoltage prevention switch and the low-potential-side control subject electrode of the high-side main switch element and a second one of the high-side voltage-dividing components being connected between the control terminal of the high-side overvoltage prevention switch and the control electrode of the high-side main switch element, so that a potential at one end of the first one of the high-side voltage-dividing components is applied at the control terminal of the high-side overvoltage prevention switch and a potential at the other end of the first one of the high-side voltage-dividing components is applied at the low-potential-side control subject electrode of the high-side main switch element;
a low-side overvoltage prevention switch configured to connect a control electrode and a low-potential-side control subject electrode of the low-side main switch element; and
a low-side voltage control circuit including low-side voltage-dividing components connected in series, each low-side voltage-dividing component being one of a resistor and a capacitor, the low-side voltage control circuit being configured to turn on the low-side overvoltage prevention switch during a prescribed period at the time of potential variation at the output terminal, a first one of the low-side voltage-dividing components being connected between a control terminal of the low-side overvoltage prevention switch and the low-potential-side control subject electrode of the low-side main switch element and a second one of the low-side voltage-dividing components being connected between the control terminal of the low-side overvoltage prevention switch and the control electrode of the low-side main switch element, so that a potential at one end of the first one of the low-side voltage-dividing components is applied at the control terminal of the low-side overvoltage prevention switch and a potential at the other end of the first one of the low-side voltage-dividing components is applied at the low-potential-side control subject electrode of the low-side main switch element.
16. The load driving circuit according to claim 15 , further comprising a Zener diode configured to protect the control electrode of the high-side main switch element from an overvoltage, the Zener diode connected between the control electrode and low-potential-side control subject electrode of the high-side main switch element.
17. The load driving circuit according to claim 15 , wherein
the low-side overvoltage prevention switch includes a p-channel MOSFET; and
the low-side voltage control circuit includes as the low-side voltage-dividing components a resistor and a capacitor respectively connecting the control electrode and low-potential-side control subject electrode of the low-side main switch element to a gate electrode of the p-channel MOSFET.
18. The load driving circuit according to claim 15 , wherein
the low-side overvoltage prevention switch includes an n-channel MOSFET; and
the low-side voltage control circuit includes as the low-side voltage-dividing components a capacitor and a resistor respectively connecting the control electrode and low-potential-side control subject electrode of the low-side main switch element to a gate electrode of the n-channel MOSFET.
19. The load driving circuit according to claim 15 , wherein
the low-side overvoltage prevention switch includes a p-channel or n-channel MOSFET;
the low-side voltage control circuit includes as the low-side voltage-dividing components a pair of resistors which connect a gate electrode of the MOSFET to the control electrode and low-potential-side control subject electrode of the low-side main switch element, respectively; and
a voltage division ratio of the pair of resistors is determined so that the second MOSFET is turned on even if a width of the voltage variation at the output terminal is lower than a drive voltage which is supplied from the pair of drive voltage supply lines.
20. The load driving circuit according to claim 19 , wherein
the low-side overvoltage prevention switch further includes a second MOSFET, the second MOSFET being a p-channel MOSFET; and
the low-side voltage control circuit further includes as the low-side voltage-dividing components a resistor and a capacitor respectively connecting the control electrode and low-potential-side control subject electrode of the low-side main switch element to a gate electrode of the second p-channel MOSFET.
21. The load driving circuit according to claim 19 , wherein
the low-side overvoltage prevention switch further includes a second MOSFET, the second MOSFET being an n-channel MOSFET; and
the low-side voltage control circuit further includes as the low-side voltage-dividing components a capacitor and a resistor respectively connecting the control electrode and low-potential-side control subject electrode of the low-side main switch element to a gate electrode of the second n-channel MOSFET.
22. The load driving circuit according to claim 15 , wherein the load driving circuit is included within a single integrated circuit.
23. A drive device for driving a plasma display panel, comprising
a plurality of the load driving circuits according to claim 22 , each connected with a scanning electrode of the plasma display panel.
24. A load driving circuit, comprising
an output terminal for connection to a load;
a high-side main switch element connected to the output terminal;
an overvoltage prevention switch configured to connect a control electrode and a low-potential-side control subject electrode of the high-side main switch element; and
a voltage control circuit including voltage-dividing components connected in series, each voltage-dividing component being one of a resistor and a capacitor, the voltage control circuit being configured to turn on the overvoltage prevention switch during a prescribed period at the time of potential variation at the output terminal, a first one of the voltage-dividing components being connected between a control terminal of the overvoltage prevention switch and the low-potential-side control subject electrode of the high-side main switch element and a second one of the voltage-dividing components being connected between the control terminal of the overvoltage prevention switch and the control electrode of the high-side main switch element, so that a potential at one end of the first one of the voltage-dividing components is applied at the control terminal of the overvoltage prevention switch and a potential at the other end of the first one of the voltage-dividing components is applied at the low-potential-side control subject electrode of the high-side main switch element.
25. The load driving circuit according to claim 24 , further comprising a Zener diode configured to protect the control electrode of the high-side main switch element from an overvoltage, the Zener diode connected between the control electrode and low-potential-side control subject electrode of the high-side main switch element.
26. The load driving circuit according to claim 24 , wherein
the overvoltage prevention switch includes a p-channel MOSFET; and
the voltage control circuit includes as the voltage-dividing components a resistor and a capacitor, respectively connecting the control electrode and low-potential-side control subject electrode of the high-side main switch element to a gate electrode of the p-channel MOSFET.
27. The load driving circuit according to claim 24 , wherein
the one of the two main switch elements is the high-side main switch element;
the overvoltage prevention switch includes an n-channel MOSFET; and
the voltage control circuit includes as the voltage-dividing components a capacitor and a resistor respectively connecting the control electrode and low-potential-side control subject electrode of the high-side main switch element to a gate electrode of the n-channel MOSFET.
28. The load driving circuit according to claim 24 , wherein
the overvoltage prevention switch includes a first p-channel or first n-channel MOSFET; and
the voltage control circuit includes as the voltage-dividing components a pair of resistors which connect a gate electrode of the first MOSFET to the control electrode and low-potential-side control subject electrode of the high-side main switch element, respectively.
29. The load driving circuit according to claim 28 , wherein
the overvoltage prevention switch further includes a second MOSFET, the second MOSFET being a p-channel MOSFET; and
the voltage control circuit further includes as the voltage-dividing components a resistor and a capacitor respectively connecting the control electrode and low-potential-side control subject electrode of the high-side main switch element to the gate electrode of the second p-channel MOSFET.
30. The load driving circuit according to claim 28 , wherein
the overvoltage prevention switch further includes a second MOSFET, the second MOSFET being an n-channel MOSFET; and
the voltage control circuit further includes as the voltage-dividing components a capacitor and a resistor respectively connecting the control electrode and the low-potential-side control subject electrode of the high-side main switch element to a gate electrode of the second n-channel MOSFET.
31. A load driving circuit, comprising
an output terminal for connection to a load;
a low-side main switch element having a high-potential-side control subject electrode connected to the output terminal;
an overvoltage prevention switch configured to connect a control electrode and the low-potential-side control subject electrode of the low-side main switch element; and
a voltage control circuit including voltage-dividing components connected in series, each voltage-dividing component being one of a resistor and a capacitor, the voltage control circuit being configured to turn on the overvoltage prevention switch during a prescribed period at the time of potential variation at the output terminal, a first one of the voltage-dividing components being connected between a control terminal of the overvoltage prevention switch and the low-potential-side control subject electrode of the low-side main switch element and a second one of the voltage-dividing components being connected between the control terminal of the overvoltage prevention switch and the control electrode of the low-side main switch element, so that a potential at one end of the first one of the voltage-dividing components is applied at the control terminal of the overvoltage prevention switch and a potential at the other end of the first one of the voltage-dividing components is applied at the low-potential-side control subject electrode of the low-side main switch element.
32. The load driving circuit according to claim 31 , wherein
the overvoltage prevention switch includes a p-channel MOSFET; and
the voltage control circuit includes as the voltage-dividing components a resistor and a capacitor respectively connecting the control electrode and low-potential-side control subject electrode of the low-side main switch element to a gate electrode of the p-channel MOSFET.
33. The load driving circuit according to claim 31 , wherein
the overvoltage prevention switch includes an n-channel MOSFET; and
the voltage control circuit includes as the voltage-dividing components a capacitor and a resistor respectively connecting the control electrode and low-potential-side control subject electrode of the low-side main switch element to a gate electrode of the n-channel MOSFET.
34. The load driving circuit according to claim 31 , wherein
the overvoltage prevention switch includes a first p-channel or first n-channel MOSFET;
the voltage control circuit includes as the voltage-dividing components a pair of resistors which connect a gate electrode of the MOSFET to the control electrode and low-potential-side control subject electrode of the low-side main switch element, respectively; and
a voltage division ratio of the pair of resistors is determined so that the first MOSFET is turned on even if a width of the voltage variation at the output terminal is lower than a drive voltage which is supplied from the pair of drive voltage supply lines.
35. The load driving circuit according to claim 34 , wherein
the overvoltage prevention switch further includes a second MOSFET, the second MOSFET being a p-channel MOSFET; and
the voltage control circuit further includes as the voltage-dividing components a resistor and a capacitor respectively connecting the control electrode and low-potential-side control subject electrode of the low-side main switch element to a gate electrode of the second p-channel MOSFET.
36. The load driving circuit according to claim 34 , wherein
the overvoltage prevention switch further includes a second MOSFET, the second MOSFET being an n-channel MOSFET; and
the voltage control circuit further includes as the voltage-dividing components a capacitor and a resistor respectively connecting the control electrode and low-potential-side control subject electrode of the low-side main switch element to a gate electrode of the second n-channel MOSFET.