Method for fabricating semiconductor device
View Patent ↗The principal objects of the present invention are to provide structure of a semiconductor device capable of reducing a bowing of a wafer, and a method for fabricating the semiconductor device. The present invention is applied to a semiconductor device, which is fabricated with a semiconductor substrate having a silicon carbide (SiC) film. The method includes the steps of: forming the SiC film on a semiconductor wafer; discriminating a deformation condition of the semiconductor wafer; and forming grooves in the SiC film, the grooves having a shape determined in accordance with the deformation condition of the semiconductor wafer.
1. A method for fabricating a semiconductor device including a semiconductor substrate having a silicon carbide (SiC) film, the method comprising:
forming an SiC film on a semiconductor wafer;
discriminating a deformation condition of the semiconductor wafer; and
forming grooves in the SiC film, the grooves having a shape determined in accordance with the deformation condition of the semiconductor wafer and being formed around a crystal-defect concentrated region in the silicon carbide (SiC) film.
2. A method for fabricating the semiconductor device according to claim 1 , wherein when a bending or bowing portion, extending in one direction of the semiconductor wafer, is discriminated, a plurality of slit-shaped grooves would be formed to extend substantially perpendicularly to a longitudinal direction in which the bending portion extends.
3. A method for fabricating the semiconductor device according to claim 1 , wherein when a concave or convex bending or bowing portion, bowing around the center of the semiconductor wafer, is discriminated, grooves would be formed to include first grooves extending in a first direction, and second grooves extending in a second direction perpendicular to the first direction.
4. A method for fabricating a semiconductor device including a semiconductor substrate having a silicon carbide (SiC) film, the method comprising:
forming an SiC film on a semiconductor wafer;
discriminating a deformation condition of the semiconductor wafer; and
forming grooves in the SiC film, the grooves formed to remove a crystal-defect concentrated region in the silicon carbide (SiC) film.
5. A method for fabricating the semiconductor device according to claim 1 , wherein the crystal-defect concentrated region in the silicon carbide (SiC) film is a region having crystal defects more than 104/cm2.
6. A method for fabricating the semiconductor device according to claim 1 , wherein the crystal-defect concentrated region is intentionally formed by a predetermined method.
7. A method for fabricating the semiconductor device according to claim 1 , wherein the crystal defects include at least one of micropipe, screw dislocation, edge dislocation.
8. A method for fabricating the semiconductor device according to claim 4 , wherein when a bending or bowing portion, extending in one direction of the semiconductor wafer, is discriminated, a plurality of slit-shaped grooves would be formed to extend substantially perpendicularly to a longitudinal direction in which the bending portion extends.
9. A method for fabricating the semiconductor device according to claim 4 , wherein when a concave or convex bending or bowing portion, bowing around the center of the semiconductor wafer, is discriminated, grooves would be formed to include first grooves extending in a first direction, and second grooves extending in a second direction perpendicular to the first direction.