Organic light emitting diode display device
View Patent ↗A passivation layer formed over and under a first pixel electrode is provided to prevent corrosion of the first pixel electrode of an organic light emitting diode (OLED) display device. The OLED display device includes: a substrate, a first passivation layer disposed on the substrate, a first pixel electrode disposed over the first passivation layer, a second passivation layer disposed over the first pixel electrode, a second pixel electrode disposed over the second passivation layer, an organic layer including an emission layer disposed over the second pixel electrode, and a counter electrode disposed over the organic layer. Each of the first and second passivation layers is formed of one selected from the group consisting of NiCr, Al 2 O 3 , TiO 2 , ZnO and PbO 2 .
1. An organic light emitting diode (OLED) display device, comprising:
a substrate;
a first passivation layer disposed on the substrate;
a first pixel electrode disposed over the first passivation layer;
a second passivation layer disposed over the first pixel electrode;
a second pixel electrode disposed over the second passivation layer;
an organic layer including an emission layer disposed over the second pixel electrode, the emission layer emitting light; and
a counter electrode disposed over the organic layer, wherein each of the first and second passivation layers is formed of one selected from the group consisting of NiCr, Al 2 O 3 , TiO 2 , ZnO and PbO 2 .
2. The OLED display device according to claim 1 , wherein the first pixel electrode is formed of one selected from the group consisting of Al, an Al alloy, Ag and an Ag alloy.
3. The OLED display device according to claim 1 , wherein the second pixel electrode is formed of one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (TO) and zinc oxide (ZnO).
4. The OLED display device according to claim 1 , further comprising:
a third pixel electrode disposed between the first passivation layer and the substrate, the third pixel electrode being formed of one selected from the group consisting of ITO, IZO, TO and ZnO.
5. The OLED display device according to claim 4 , wherein the thickness of the third pixel electrode is about 50 Å to 100 Å.
6. The OLED display device according to claim 1 , wherein the counter electrode is formed of one selected from the group consisting of Li, Ca, LiF/Ca, LiF/Al, Al, Mg and an Mg alloy, or formed in a stacked structure of one selected from the group consisting of Li, Ca, LiF/Ca, LiF/Al, Al, Mg and an Mg alloy and one selected from the group consisting of ITO, IZO, TO and ZnO.
7. The OLED display device according to claim 6 , wherein the counter electrode formed of the one selected from the group consisting of Li, Ca, LiF/Ca, LiF/Al, Al, Mg and an Mg alloy has a thickness of about 50 Å to 300 Å.
8. The OLED display device according to claim 1 , wherein each of the first and second passivation layers is formed to a thickness of about 10 Å to 50 Å.
9. The OLED display device according to claim 1 , wherein the thickness of the first pixel electrode is about 900 Å to 2000 Å.
10. The OLED display device according to claim 1 , wherein the thickness of the second pixel electrode is about 50 Å to 100 Å.
11. An organic light emitting diode (OLED) display device, comprising:
a substrate;
a thin film transistor comprising:
a semiconductor layer having a source and a drain regions;
a source electrode electrically connected to the source region; and
a drain electrode electrically connected to the drain region;
a first passivation layer connected to one of the source and drain electrodes;
a first pixel electrode disposed over the first passivation layer;
a second passivation layer disposed over the first pixel electrode, each of the first and second passivation layers being formed of one selected from the group consisting of NiCr, Al 2 O 3 , TiO 2 , ZnO and PbO 2 ;
a second pixel electrode disposed over the second passivation layer;
a pixel defining layer disposed over the second pixel electrode, the pixel defining layer having an opening partially exposing the second pixel electrode;
an organic layer including an emission layer disposed on the second pixel electrode exposed through the opening, the emission layer emitting light; and
a counter electrode disposed over the organic layer.
12. The OLED display device according to claim 11 , wherein the first pixel electrode is formed of one selected from the group consisting of Al, an Al alloy, Ag and an Ag alloy.
13. The OLED display device according to claim 11 , wherein the second pixel electrode is formed of one selected from the group consisting of ITO, IZO, TO and ZnO.
14. The OLED display device according to claim 11 , further comprising:
a third pixel electrode disposed between the first passivation layer and the substrate, the third pixel electrode being formed of one selected from the group consisting of ITO, IZO, TO and ZnO.
15. The OLED display device according to claim 14 , wherein the thickness of the third pixel electrode is about 50 Å to 100 Å.
16. The OLED display device according to claim 11 , wherein the counter electrode is formed of one selected from the group consisting of Li, Ca, LiF/Ca, LiF/Al, Al, Mg and an Mg alloy, or formed in a stacked structure of one selected from the group consisting of Li, Ca, LiF/Ca, LiF/Al; Al, Mg and an Mg alloy and one selected from the group consisting of ITO, IZO, TO and ZnO.
17. The OLED display device according to claim 16 , wherein the counter electrode being formed of the one selected from the group consisting of Li, Ca, LiF/Ca, LiF/Al, Al, Mg and an Mg alloy has a thickness of about 50 Å to 300 Å.
18. The OLED display device according to claim 11 , wherein each of the first and second passivation layers is formed to a thickness of about 10 Å to 50 Å.
19. The OLED display device according to claim 11 , wherein the thickness of the first pixel electrode is about 900 Å to 2000 Å.
20. The OLED display device according to claim 11 , wherein the thickness of the second pixel electrode is about 50 Å to 100 Å.