IP Library Granted Patent US 7,772,697
Granted Patent B2
US 7,772,697 · App. 12/075,359 · Granted Aug 10, 2010

Semiconductor device and method for producing the same

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Quick Facts
Patent No.
US 7,772,697
App. No.
12/075,359
Granted
Aug 10, 2010
Kind
B2
Abstract

A semiconductor device includes a tape carrier substrate having a flexible insulating film base, a plurality of conductor wirings provided on the film base, and wiring bumps respectively formed so as to cover an upper surface and both side surfaces of the conductor wirings, and a semiconductor chip mounted on the tape carrier substrate, wherein electrodes of the semiconductor chip are connected to the conductor wirings via the wiring bumps. Electrode bumps are formed on the electrodes of the semiconductor chip, the electrodes of the semiconductor chip are connected to the conductor wirings via a bonding between the wiring bumps and the electrode bumps, and the electrode bumps are harder than the wiring bumps. This structure can reduce bonding damages to the electrodes of the semiconductor chip caused by a process of connecting the electrodes and the conductor wirings via the bumps.

Claims (11)

1. A semiconductor device comprising:

a tape carrier substrate comprising

a plurality of conductor wirings, and

wiring bumps respectively formed on the conductor wirings; and

a semiconductor chip mounted on the tape carrier substrate, with electrodes of the semiconductor chip being connected to the conductor wirings via the wiring bumps,

wherein electrode bumps with hardness lower than and a size larger than the wiring bumps are formed on the electrodes of the semiconductor chip, so that the electrodes of the semiconductor chip are connected to the conductor wirings via a bonding between the wiring bumps and the electrode bumps,

the wiring bumps are formed so as to cover an upper surface and both side surfaces of the conductor wirings of the tape carrier substrate,

the wiring bumps are buried in the electrode bumps, and

the electrode bumps are in contact with the tape carrier substrate.

2. The semiconductor device according to claim 1 , wherein the wiring bumps comprise a Ni layer and an Au layer.

3. The semiconductor device according to claim 1 , wherein the wiring bumps are formed so as to cover only an upper surface or only an upper surface and one of both side surfaces of the conductor wirings of the tape carrier substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2020
From: PANASONIC CORPORATION
To: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
Reel/Frame 052755/0917 →